Untitled
Abstract: No abstract text available
Text: FQP9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP9P25
O-220
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Untitled
Abstract: No abstract text available
Text: N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 m Features Description ® ® SuperFET II FRFET MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET, utilizes advanced charge-balance technology for outstandingly low on-state resistance and
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fqa9p25
Abstract: No abstract text available
Text: FQA9P25 P-Channel QFET MOSFET - 250 V, -10.5 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA9P25
FQA9P25
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Untitled
Abstract: No abstract text available
Text: FCD620N60ZF N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description o SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCD620N60ZF
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Untitled
Abstract: No abstract text available
Text: FQPF9P25 P-Channel QFET MOSFET -250 V, -6 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQPF9P25
O-220F
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mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
ls 7400
PD908
014 IR MOSFET Transistor
IRFM064
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irf 540 mosfet
Abstract: IRFM064
Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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0875A
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
IRFM064
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Untitled
Abstract: No abstract text available
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
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CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
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lm2725
Abstract: LM2725MX LM2725M LM2726 LM2726M LM2726MX
Text: LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that can drive both the top MOSFET and bottom MOSFET in a push-pull structure simultaneously. It takes a logic level PWM input and splits it into two complimentary signals with
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LM2725/LM2726
LM2725/LM2726
LM2725
LM2726
LM2725MX
LM2725M
LM2726M
LM2726MX
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TA-3101
Abstract: No abstract text available
Text: CPH5803 Ordering number : ENN6935A CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)
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ENN6935A
CPH5803
MCH3405)
SBS004M)
TA-3101
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mch3412
Abstract: ta3173 DIODE MARKING 3173 TA-317
Text: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)
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ENN6981
CPH5805
MCH3412)
SBS006)
CPH5805]
mch3412
ta3173
DIODE MARKING 3173
TA-317
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SCH2819
Abstract: SCH1419
Text: SCH2819 Ordering number : ENN8291 SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)
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SCH2819
ENN8291
SCH1419)
SS0503)
SCH2819
SCH1419
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SCH1412
Abstract: SCH2808
Text: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)
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SCH2808
ENN8360
SCH1412)
SS0503)
SCH1412
SCH2808
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MTY25N60E
Abstract: AN569 TL 188 TRANSISTOR PIN DIAGRAM
Text: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTY25N60E
O-264
r14525
MTY25N60E/D
MTY25N60E
AN569
TL 188 TRANSISTOR PIN DIAGRAM
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
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high-speed power mosfet 2Mhz
Abstract: LM27212 5Vto28V
Text: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically
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LM27222
LM27222
SNVS306A
high-speed power mosfet 2Mhz
LM27212
5Vto28V
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MTY25N60E
Abstract: AN569
Text: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTY25N60E
r14525
MTY25N60E/D
MTY25N60E
AN569
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CPH5803
Abstract: MCH3405 SBS004M EN693
Text: CPH5803 Ordering number : EN6935B SANYO Semiconductors DATA SHEET CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)
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CPH5803
EN6935B
MCH3405)
SBS004M)
CPH5803
MCH3405
SBS004M
EN693
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40N60C
Abstract: ISOPLUS247
Text: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol
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ISOPLUS247TM
40N60C
247TM
E153432
40N60C
ISOPLUS247
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LTC1422
Abstract: 18v to 3.3v converter 2a 2410* mosfet
Text: = !"#$% &' ! 272 Vladimir Ostrerov !"#$%&'"(# *+,-./01 !"#$%&'()*+,-./0123 !"#$%&'()$*+,-./01 !"#$ %&'()*+,-#('. !"#$%&'()*+,-./0123 !"#$%&'()*+,-./01= 5 !"#$ =1 !"#$%&'()*+,-./"0 !"#$%&'(N MOSFET !" !"#$%&M O S F E T !"#$% !"#$%&'()*+,- .(/01 MOSFET !"#$%&'()*+,!"#$=2=
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LTC1422
LTC1728-1
Si4874
MBR303
dn272f
18v to 3.3v converter 2a
2410* mosfet
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FN6494
Abstract: cgs resistor ISL6620 ISL6620A ISL6620CBZ MO-220 TB363 TB417 VR11 620Z
Text: ISL6620, ISL6620A Data Sheet April 25, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers FN6494.0 Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6620, ISL6620A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel
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ISL6620,
ISL6620A
FN6494
ISL6620A
cgs resistor
ISL6620
ISL6620CBZ
MO-220
TB363
TB417
VR11
620Z
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Untitled
Abstract: No abstract text available
Text: ISL6620, ISL6620A Data Sheet April 25, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers FN6494.0 Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6620, ISL6620A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel
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ISL6620,
ISL6620A
FN6494
ISL6620A
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