Untitled
Abstract: No abstract text available
Text: HY2N70T / HY2N70FT 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS ON =6.5W@VGS=10V, ID=1A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current
|
Original
|
HY2N70T
HY2N70FT
O-220AB
ITO-220AB
2002/95/EC
O-220AB
ITO-220AB
MIL-STD-750
HY2N70T
2N70T
|
PDF
|
4N70F
Abstract: No abstract text available
Text: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current
|
Original
|
HY4N70T
HY4N70FT
O-220AB
ITO-220AB
2002/95/EC
O-220AB
ITO-220AB
MIL-STD-750
HY4N70T
4N70T
4N70F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A
|
Original
|
HY2N70D
HY2N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A
|
Original
|
HY4N70D
HY4N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
|
PDF
|
2N70M
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A
|
Original
|
HY2N70D
HY2N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
2N70M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A
|
Original
|
HY4N70D
HY4N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET I j FS2UM-14A ! HIGH-SPEED SWITCHING USE FS2UM-14A • VDSS . -700V • rDS ON (MAX) . 9.75Í2 • I D . 2A
|
OCR Scan
|
FS2UM-14A
-700V
|
PDF
|
U2N70
Abstract: No abstract text available
Text: PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET ITO-220AB/TO-251 FEATURES ITO-220AB • 700V, RDS ON =5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS
|
Original
|
PJF2N70
PJU2N70
ITO-220AB/TO-251
ITO-220AB
2002/95/EC
O-251
O-220AB
O-251
MIL-STD-750
PJF2N70
U2N70
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N70ZL Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70ZL is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
|
Original
|
2N70ZL
2N70ZL
QW-R502-765
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N70Z Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
|
Original
|
2N70Z
2N70Z
QW-R502-766
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N70K-MT Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70K-MT is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
|
Original
|
2N70K-MT
2N70K-MT
2N70Kat
QW-R205-008
|
PDF
|
FS5KM-14A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5KM-14A HIGH-SPEED SWITCHING USE FS5KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 • VDSS . 700V .2.6Q
|
OCR Scan
|
FS5KM-14A
O-220FN
FS5KM-14A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This
|
Original
|
2N70-CB
2N70-CB
2N70L-Tat
QW-R209-072
|
PDF
|
1A 700V MOSFET
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A • Voss OUTLINE DRAWING . Dimensions in mm 700V • rDS ON (MAX) . 9 .7 5 Q
|
OCR Scan
|
FS2KM-14A
O-220FN
1A 700V MOSFET
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
|
Original
|
4N70-C
4N70-C
4N70L-TFat
QW-R502-A89
|
PDF
|
SVD2N70
Abstract: No abstract text available
Text: SVD2N70M/SVD2N70F 2A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
|
Original
|
SVD2N70M/SVD2N70F
O-251-3L
30TYP
O-220F-3L
SVD2N70
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
|
Original
|
4N70-S
4N70-S
O-252
QW-R205-023
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
|
Original
|
7NM70
7NM70
QW-R205-047
|
PDF
|
FS5KM14A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5KM-14A HIGH-SPEED SWITCHING USE FS5KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s . 700V rDS ON (MAX) . 2.6Í1
|
OCR Scan
|
FS5KM-14A
O-220FN
57KH23
FS5KM14A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 1.3 LU U LU qwe 0 ' q w e r q O- ' V dss . . 700V . 9.75Í1
|
OCR Scan
|
FS2UM-14A
O-220
|
PDF
|
n channel 700V
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 3.2 hf 5.45 5.45 jbd i 0.6 bdl Qi V d s s . 700V rDS ON (MAX) . 2.6Í1
|
OCR Scan
|
FS5SM-14A
71Q-123
n channel 700V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2 .8 ± 0 . 2 V d s s . 700V rDS ON (MAX) . 9.75Í1
|
OCR Scan
|
FS2KM-14A
O-220FN
|
PDF
|
FS2VS-14A mosfet
Abstract: FS2VS-14A
Text: MITSUBISHI Neh POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING L q Dimensions in mm J w e •V o +i CD O w r ' V dss . . 700V ' rDS ON (MAX) .9.75Q ' I d . .2A oi q w e
|
OCR Scan
|
FS2VS-14A
O-22QS
FS2VS-14A mosfet
|
PDF
|
POWER MOSFET 4600
Abstract: 1A 700V MOSFET
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
|
Original
|
TSM2N70
O-220
O-251
O-252
TSM2N70
POWER MOSFET 4600
1A 700V MOSFET
|
PDF
|
