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    MOSFET 923 54 Search Results

    MOSFET 923 54 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 923 54 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    g419

    Abstract: G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232
    Text: HE D I 4055452 □□0C!44E ? | Data Sheet No. PD-9.384F INTERNATIONAL R E C T IFIE R INTERNATIONAL RECTIFIER T -3 9 -1 9 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF9231 G IRFFS232 ^—6s -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET® technology is the key to International Rectifier’s


    OCR Scan     		T-39-19 IRFFS230 IRFF9233 G-424 g419 G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchTM Power MOSFET Common-Gate Pair IXTL2x180N10T VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions


    Original     		IXTL2x180N10T 2x100A 338B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTL2x18010T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


    Original     		IXTL2x18010T 2x100A 338B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTL2x180N10T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions


    Original     		IXTL2x180N10T 2x100A 338B2 PDF

    MOSFET 923 54

    Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
    Text: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V


    OCR Scan     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 VQ7254N6 TQ3001N7 250mA VQ7254 MOSFET 923 54 N06L quad N-Channel MOSFET dip package 40v N- and P-Channel dip PDF

    offline UPS

    Abstract: MOSFET 923 54 IXTL2x180N10T
    Text: Advance Technical Information TrenchMVTM Power MOSFETs Common-Gate Pair IXTL2x180N10T D VDSS = 100 V ID25 = 2x100 A Ω RDS on ≤ 7.4 mΩ D (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG S RG ISOPLUS i5-PakTM (IXTL) G S


    Original     		IXTL2x180N10T 2x100 405B2 offline UPS MOSFET 923 54 IXTL2x180N10T PDF

    TQ3001

    Abstract: TQ3001N7 VQ3001 VQ3001N6 VQ7254 VQ7254N6
    Text: TQ3001 VQ3001 VQ7254 N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 40V 3.0Ω 2.0V -3.0V VQ3001N6 — 40V 3.0Ω 1.6V -2.4V — TQ3001N7 20V 3.0Ω


    Original     		TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 TQ3001N7 VQ7254N6 TQ3001 TQ3001N7 VQ3001 VQ3001N6 VQ7254 VQ7254N6 PDF

    KY 719

    Abstract: 122JK TB163TK TB143TK
    Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75


    OCR Scan     		2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 KY 719 122JK TB163TK TB143TK PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET IXTA180N10T IXTP180N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 180A Ω ≤ 6.4mΩ TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM


    Original     		IXTA180N10T IXTP180N10T O-263 062in. 180N10T 2-02-07-B PDF

    180N10T

    Abstract: No abstract text available
    Text: PreliminaryTechnical Information TrenchMVTM Power MOSFET IXTA180N10T7 VDSS ID25 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		IXTA180N10T7 180N10T 1-20-06-A 180N10T PDF

    AIR FLOW DETECTOR

    Abstract: smd transistor 351A hall 503 911 smd transistor A6t SENSOR PBT gf 35 G5V2 5V Hall Sensor 13A 439 omron relay 12v dc g8sn D6F-02A-110 dielectric tester dc
    Text: Components Catalogue Contents Contents Welcome 7-8 POWER RELAYS 9 - 156 Technical Information – Power & Signal Relays 9 - 28 AUTOMOTIVE RELAYS 274 - 313 Selection Guide 274 - 277 G8N-1 278 - 282 Selection Guide 29 - 40 G8ND-2 283 - 287 G5B 41 - 44 G8NW 288 - 292


    Original     		UL94V-0 XF2E-0515-1 XFE-1015-1 XF2E-0615-1 XFE-1215-1 XF2E-0715-1 XFE-1515-1 XF2H-0815-1 XFE-1715-1 AIR FLOW DETECTOR smd transistor 351A hall 503 911 smd transistor A6t SENSOR PBT gf 35 G5V2 5V Hall Sensor 13A 439 omron relay 12v dc g8sn D6F-02A-110 dielectric tester dc PDF

    IXTA180n10t

    Abstract: IXTP*80N10T IXTA180N10 ixtp180n10t 180N10T T180N
    Text: IXTA180N10T IXTP180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 180A Ω ≤ 6.4mΩ TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM


    Original     		IXTA180N10T IXTP180N10T O-263 062in. 180N10T 2-02-07-B IXTA180n10t IXTP*80N10T IXTA180N10 ixtp180n10t T180N PDF

    Untitled

    Abstract: No abstract text available
    Text: PreliminaryTechnical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA180N10T7 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		IXTA180N10T7 O-263 180N10T 1-20-06-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8935 ULTRA- LOW ON RESISTANCE, 6A LOAD SWITCH WITH CONTROLLED TURN-ON FEATURES DESCRIPTION ▓ Integrated 6A Single Channel Load Switch The APE8935 is a small, ultra-low RON load switch ▓ Input Voltage Range: 0.8V to 5.5V


    Original     		APE8935 APE8935 8935GN3 PDF

    IXTH180N10T

    Abstract: 180N10T IXTQ180N10T
    Text: Preliminary Technical Information IXTH180N10T IXTQ180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A Ω ≤ 6.4 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		IXTH180N10T IXTQ180N10T O-247 180N10T 1-20-06-A IXTH180N10T 180N10T IXTQ180N10T PDF

    ixtp180n10t

    Abstract: IXTA180N10T IXTP*80N10T
    Text: Preliminary Technical Information IXTA180N10T IXTP180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100


    Original     		IXTA180N10T IXTP180N10T O-263 O-220) O-263 O-220 180N10T ixtp180n10t IXTP*80N10T PDF

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


    Original     		M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt PDF

    Untitled

    Abstract: No abstract text available
    Text: Quasi-Resonant Controllers with Integrated Power MOSFET STR-Y6700 Series General Descriptions Package The STR-Y6700 series are power ICs for switching power supplies, incorporating a MOSFET and a quasi-resonant controller IC. Including an auto standby function in the controller,


    Original     		STR-Y6700 O220F-7L PDF

    LM 4088 relay

    Abstract: IC LM 393 N hall 503 911 smd transistor A6t smd transistor 351A smd a6t double diode SX4009-P1 914 Battery Protection IC G2RL G8HN ic 4081 datasheet
    Text: Components Catalogue Contents Contents Welcome 7-8 POWER RELAYS 9 - 156 Technical Information – Power & Signal Relays 9 - 28 AUTOMOTIVE RELAYS 274 - 313 Selection Guide 274 - 277 G8N-1 278 - 282 Selection Guide 29 - 40 G8ND-2 283 - 287 G5B 41 - 44 G8NW 288 - 292


    Original     		PDF

    relay omron G2E

    Abstract: MOSFET 831 63 ng IR 944 triac Solid State Micro Technology EY3A-112 omron components catalogue automotive relay OMRON DIP switch relay cross reference G3MC OMRON RELAY G6Y Cross Reference
    Text: Components Catalogue Contents Contents Welcome 7-8 POWER RELAYS 9 - 156 Technical Information – Power & Signal Relays 9 - 28 AUTOMOTIVE RELAYS 274 - 313 Selection Guide 274 - 277 G8N-1 278 - 282 Selection Guide 29 - 40 G8ND-2 283 - 287 G5B 41 - 44 G8NW 288 - 292


    Original     		PDF

    omron components catalogue automotive relay

    Abstract: omron MY 4N relay RL 782 relay relay 4088 6V mosfet ss 544 relay omron G2E 824 mosfet Photo MOS Relay RELAY 4088 G3VM-401A
    Text: Components Catalogue Contents Contents Welcome 7-8 POWER RELAYS 9 - 156 Technical Information – Power & Signal Relays 9 - 28 AUTOMOTIVE RELAYS 274 - 313 Selection Guide 274 - 277 G8N-1 278 - 282 Selection Guide 29 - 40 G8ND-2 283 - 287 G5B 41 - 44 G8NW 288 - 292


    Original     		PDF

    SBMT2222A

    Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
    Text: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)


    OCR Scan     		100ic OT-143 OT-143 KTY13B OT-23 OT-23 KSY13 SBMT2222A Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F PDF