9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
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R0039A
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
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R0039A
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fet_11100.0
Abstract: No abstract text available
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Basic MOSFET / EPAD Schematic no. fet_11100.0 MOSFET Inverter Circuit Description This circuit shows a basic MOSFET or EPAD MOSFET inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage
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mosfet inverter
Abstract: MOSFET MOSFET pA leakage voltage inverter schematic mosfet INVERTER applications circuit ideas LOW R MOSFET
Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Schematic no. fet_11100.0 Basic MOSFET / EPAD MOSFET Inverter Circuit Description This circuit shows a basic MOSFET or EPAD MOSFET inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage
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ALD1108xx,
ALD1109xx,
mosfet inverter
MOSFET
MOSFET pA leakage
voltage inverter schematic
mosfet INVERTER applications
circuit ideas
LOW R MOSFET
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Untitled
Abstract: No abstract text available
Text: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input
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LM2725
LM2726
LM2725/LM2726
SNVS144B
LM272/clocks
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4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.
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AN-30
TC4424
4422 mosfet
MOSFET 4420
Matching MOSFET Drivers to MOSFETs
parallel mosfet
4469 mosfet
use of zener diode
4420 mosfet
mosfet 4468
4422 dual mosfet
irf4501
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Untitled
Abstract: No abstract text available
Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDH210N08
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Untitled
Abstract: No abstract text available
Text: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 3 4 Control circuit 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in
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000pF;
APV2121S
APV2111V
APV1122
APV1121S
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Untitled
Abstract: No abstract text available
Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching
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FDB15N50
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Untitled
Abstract: No abstract text available
Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides
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FDPF17N60NT
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APV1121S
Abstract: No abstract text available
Text: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 4 1 4 Control circuit 3 3 2 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in
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000pF;
APV2121S
APV2111V
APV1122
APV1121S
APV1121S
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photovoltaic MOSFET driver
Abstract: APV1121S
Text: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 4 1 4 Control circuit 3 3 2 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in
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000pF;
APV2121S
APV2111V
APV1122
APV1121S
photovoltaic MOSFET driver
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
NCP5338
NCP5338/D
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Untitled
Abstract: No abstract text available
Text: NCP5360A Integrated Driver and MOSFET The NCP5360A integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360A integrated
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NCP5360A
NCP5360A
56-pin
QFN56
485AY
NCP5360A/D
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
NCP5338
NCP5338/D
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Untitled
Abstract: No abstract text available
Text: FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP75N08A
O-220
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mosfet SOA testing
Abstract: MOSFET testing linear mosfet MOSFET 1000 VOLTS
Text: POWER MOS PRODUCTS - Linear MOSFETs W E N HERMETIC LINEAR MOSFETs What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with concurrent high voltage and high current near DC conditions >100msecs . applications. This new Linear MOSFET
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100msecs)
APL1001P
APL501P
mosfet SOA testing
MOSFET testing
linear mosfet
MOSFET 1000 VOLTS
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fet_11101.0
Abstract: No abstract text available
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Basic MOSFET / EPAD Schematic no. fet_11101.0 MOSFET Diode-Connected Circuit Description This circuit shows a basic diode–connected MOSFET connection. The drain terminal is shorted to the gate terminal. This circuit produces an output voltage VO with the drain current Ids that flows
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Untitled
Abstract: No abstract text available
Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Schematic no. fet_11101.0 Basic MOSFET / EPAD MOSFET Diode-Connected Circuit Description This circuit shows a basic diode–connected MOSFET connection. The drain terminal is shorted to the gate terminal. This circuit produces an output voltage VO with the drain current Ids that flows
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ALD1109xx,
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Untitled
Abstract: No abstract text available
Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Schematic no. fet_11101.0 Basic MOSFET / EPAD MOSFET Diode-Connected Circuit Description This circuit shows a basic diode–connected MOSFET connection. The drain terminal is shorted to the gate terminal. This circuit produces an output voltage VO with the drain current Ids that flows
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ALD1108xx,
ALD1109xx,
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Untitled
Abstract: No abstract text available
Text: tSENSITRON SPM6M050-010D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL
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SPM6M050-010D
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lm2725
Abstract: LM2725MX LM2725M LM2726 LM2726M LM2726MX
Text: LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that can drive both the top MOSFET and bottom MOSFET in a push-pull structure simultaneously. It takes a logic level PWM input and splits it into two complimentary signals with
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LM2725/LM2726
LM2725/LM2726
LM2725
LM2726
LM2725MX
LM2725M
LM2726M
LM2726MX
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SPM6M050-010D
Abstract: No abstract text available
Text: SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL
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SPM6M050-010D
SPM6M050-010D
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