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    MOSFET BASED H BRIDGE Search Results

    MOSFET BASED H BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK421G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET BASED H BRIDGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4082IBZ

    Abstract: HIP4082 HIP4082IP HIP4082IPZ without pwm hip4082 design HIP4080A HIP4081 HIP4081A HIP4082IB HIP4082IBZ
    Text: 80V, 1.25A Peak Current H-Bridge FET Driver Features The HIP4082 is a medium frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 16 lead plastic SOIC N and DIP packages. Specifically targeted for PWM motor control and UPS applications, bridge based designs are made simple and


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    HIP4082 95VDC 1000pF FN3676 4082IBZ HIP4082IP HIP4082IPZ without pwm hip4082 design HIP4080A HIP4081 HIP4081A HIP4082IB HIP4082IBZ PDF

    HIP4086

    Abstract: HIP4086AB
    Text: fC l H A R R HIP4086 IS S E M I C O N D U C T O R 80V, 0.5A Three Phase Driver January 1998 Description Features • The HIP4086 is a Three Phase Bridge N-Channel MOSFET driver IC. The HIP4086 is specifically targeted for PWM motor control. It makes bridge based designs simple and


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    HIP4086 HIP4086 HIP4081, HIP4081 HIP4082. HIP4086AB PDF

    AOD604

    Abstract: AOD604L MJ5025
    Text: AOD604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD604 AOD604 AOD604L O-252 MJ5025 PDF

    AOD604

    Abstract: complementary MOSFET TO252
    Text: AOD604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD604 AOD604L O-252 complementary MOSFET TO252 PDF

    1M4148

    Abstract: 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093
    Text: /T T SGS-THOMSON * 7# . [ f f lD S S & IC T M S O g i TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION The bridge-leg is an important building block for many applications such as drives and switch-mode


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    00V/DIV 1M4148 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093 PDF

    aod606

    Abstract: AOD606L
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD606 AOD606L O-252-4L PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD606 AOD606 O-252-4L PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD606 AOD606 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD606 AOD606 O-252-4L PDF

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges


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    AN845 06-Oct-14 PDF

    AOD604

    Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: AOD604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD604 AOD604 O-252-5L N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A PDF

    AOD606

    Abstract: aod606 datasheet
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD606 AOD606 O-252-4L Symb06 aod606 datasheet PDF

    AOD606

    Abstract: transistor 45 f 122 NAV70 AOD606L mj5025
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD606 AOD606 AOD606L O-252-4L transistor 45 f 122 NAV70 mj5025 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    AOD606 AOD606 O-252-4L PDF

    SPM6M080-010D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


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    SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D PDF

    LIN opto isolator

    Abstract: SPM6M080-010D 210C DS34C87 SFH6186-4
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.1 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


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    SPM6M080-010D LIN opto isolator SPM6M080-010D 210C DS34C87 SFH6186-4 PDF

    SPM6M080-010D-B

    Abstract: 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.2 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


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    SPM6M080-010D SPM6M080-010D-B 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP PDF

    IRS20955SPBF

    Abstract: No abstract text available
    Text: IRS20955 S PbF Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


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    IRS20955 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF IRS20955SPBF PDF

    IRS20955STRPBF

    Abstract: IRS20957 IRS20955S IRS20955 irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 VB-20
    Text: IRS20955 S PbF Not recommended for new design Please refer to IRS20957 Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation


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    IRS20955 IRS20957 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF SO-16 IRS20955STRPBF IRS20957 IRS20955S irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 VB-20 PDF

    IRS20955

    Abstract: IRS20957 IRS20955S mofet amplifier circuit diagram 1N4002 AN-978 BAV21 VB-20 13001 sd to 220 TRANSISTOR equivalent transistor 13001 TO 92
    Text: IRS20955 S PbF Not recommended for new design Please refer to IRS20957 Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation


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    IRS20955 IRS20957 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF SO-16 IRS20957 IRS20955S mofet amplifier circuit diagram 1N4002 AN-978 BAV21 VB-20 13001 sd to 220 TRANSISTOR equivalent transistor 13001 TO 92 PDF

    IRS20955PBF

    Abstract: IRS20955 IRS20955S irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 MS-012AC VB-20
    Text: PRELIMINARY Data Sheet No. PD60303 IRS20955 S PbF PROTECTED DIGITAL AUDIO DRIVER Features • · · · · · · · Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


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    PD60303 IRS20955 16-Lead IRS20955PbF IRS20955SPbF IRS20955STRPbF IRS20955PBF IRS20955S irs*20955s IRS20955SPBF 1N4002 AN-978 BAV21 MS-012AC VB-20 PDF

    IRS20955S

    Abstract: IRS20955 transistor 13001 TO 92 transistor x 13001 IRS20955SPBF 13001 sd to 220 TRANSISTOR equivalent 1N4002 AN-978 BAV21 MS-012AC
    Text: Data Sheet No. PD60303 IRS20955 S PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


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    PD60303 IRS20955 IRS20955S transistor 13001 TO 92 transistor x 13001 IRS20955SPBF 13001 sd to 220 TRANSISTOR equivalent 1N4002 AN-978 BAV21 MS-012AC PDF

    SPM6M080-010D

    Abstract: SPM6M060-025D 010D
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


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    SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D SPM6M060-025D 010D PDF

    IRS20955

    Abstract: PD60303 IRS20955S IRS20955STRPBF 1N4002 AN-978 BAV21 MS-012AC VB-20 transistor 13001 TO 92
    Text: IRS20955 S PbF Data Sheet No. PD60303 IRS20955(S)PbF PROTECTED DIGITAL AUDIO DRIVER Features • • • • • • • • Product Summary Floating PWM input enables easy half-bridge implementation Programmable bidirectional over-current protection with self-reset function


    Original
    IRS20955 PD60303 16-Lead IRS20955SPbF IRS20955STRPbF SO-16 PD60303 IRS20955S IRS20955STRPBF 1N4002 AN-978 BAV21 MS-012AC VB-20 transistor 13001 TO 92 PDF