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    MOSFET CLASS AB RF Search Results

    MOSFET CLASS AB RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    MOSFET CLASS AB RF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 4702

    Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts


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    IXZ210N50L IXZ2210N50L 175MHz IXZ210N50L 175MHz mosfet 4702 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942 PDF

    rf power mosfet

    Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
    Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings


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    IXZ215N12L 175MHz rf power mosfet mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet PDF

    "RF MOSFET" 300W

    Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
    Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating


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    IXZ12210N50L 175MHz 175MHz IXZ1210N50L dsIXZ12210N50L "RF MOSFET" 300W transistor tl 187 "RF MOSFETs" RF POWER MOSFET 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf PDF

    5r1 mosfet transistor

    Abstract: mosfet j142 J132 MOSFET 741 datasheet motorola mosfet J137 MOSFET J132 transistor zo 607 ZO 607 MA MRF6522-5R1 SMD transistor 23
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A and Class AB common source, linear power


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    MRF6522 MRF6522-5R1 5r1 mosfet transistor mosfet j142 J132 MOSFET 741 datasheet motorola mosfet J137 MOSFET J132 transistor zo 607 ZO 607 MA MRF6522-5R1 SMD transistor 23 PDF

    "RF MOSFETs"

    Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
    Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast


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    IXZ308N120 175MHz IXZ308N120 dsIXZ308N12 "RF MOSFETs" "RF MOSFET" 731 MOSFET mosfet 440 mhz MOSFET RF POWER PDF

    mosfet 4702

    Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


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    IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L mosfet 4702 IXZ2210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364 PDF

    IXZ2210N50L

    Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
    Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating


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    IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L IXZ2210N50L "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF PDF

    Untitled

    Abstract: No abstract text available
    Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast


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    IXZ308N120 175MHz IXZ308N120 dsIXZ308N12 PDF

    mosfet amplifier class ab rf

    Abstract: QPP-001 "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB
    Text: QuikPAC Data QPP-001 30 W, 869-894 MHz Class AB Amplifier General description: Features: The QPP-001 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with


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    QPP-001 QPP-001 180max mosfet amplifier class ab rf "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB PDF

    "RF MOSFET CLASS AB

    Abstract: RF MOSFET CLASS AB
    Text: QuikPAC Data QPP-002 30 W, 925-960 MHz Class AB Amplifier General description: Features: The QPP-002 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with


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    QPP-002 QPP-002 180max "RF MOSFET CLASS AB RF MOSFET CLASS AB PDF

    27271SL

    Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications


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    MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310 PDF

    transistor z4 n

    Abstract: NPN transistor mhz s-parameter mjd310 MRF282
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


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    MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282 PDF

    MRF282

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


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    MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 MRF282 PDF

    Arlon

    Abstract: MRF282
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


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    MRF282/D MRF282SR1* MRF282ZR1* DEVICEMRF282/D Arlon MRF282 PDF

    RE65G1R00

    Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


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    MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 RE65G1R00 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282ZR1 Arlon mjd310 MRF282 PDF

    MRF282

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


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    MRF282/D MRF282SR1 MRF282ZR1 DEVICEMRF282/D MRF282 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


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    MMRF1014N MMRF1014NT1 PDF

    25c2625

    Abstract: MHW1910 MHW1910-1 mos 4801
    Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ


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    MHW1910/D MHW1910-1 301AW MHW1910 25c2625 MHW1910-1 mos 4801 PDF

    MW6S004N

    Abstract: MW6S004NT1 t490 600B A113 A114 A115 AN1955 C101 CDR33BX104AKWS
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 1, 4/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S004N MW6S004NT1 MW6S004N MW6S004NT1 t490 600B A113 A114 A115 AN1955 C101 CDR33BX104AKWS PDF

    MW6S004NT1

    Abstract: MW6S004N FREESCALE PACKING 250GX-0300-55-22 A113 A114 A115 AN1955 C101 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 4, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S004N MW6S004NT1 MW6S004NT1 MW6S004N FREESCALE PACKING 250GX-0300-55-22 A113 A114 A115 AN1955 C101 CDR33BX104AKYS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 4, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S004N MW6S004NT1 PDF

    64580

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 3, 4/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S004N MW6S004NT1 64580 PDF

    MW6S004N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 0, 1/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S004N MW6S004NT1 MW6S004N PDF

    t490d106k035at

    Abstract: MW6S004NT1 MW6S004N A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S004N MW6S004NT1 t490d106k035at MW6S004NT1 MW6S004N A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 PDF