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    MOSFET DEFINITIONS Search Results

    MOSFET DEFINITIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET DEFINITIONS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet Switching Definitions INPUT BOOST MOSFET+IGBT General conditions = 125 °C Tj = 4Ω Rgon IGBT Rgoff IGBT = 4Ω INPUT BOOST MOSFET+IGBT Figure 1 MOSFET turn off delayed by 100ns INPUT BOOST MOSFET+IGBT Figure 2


    Original     		10-FZ06NBA084FP-M306L48 100ns VGE10% Tjmax-25Â 00V/84A PDF

    FDD8N50NZ

    Abstract: FDD8N50 FDD8N50NZTM
    Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and


    Original     		FDD8N50NZ FDD8N50NZ FDD8N50 FDD8N50NZTM PDF

    Untitled

    Abstract: No abstract text available
    Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDH210N08 PDF

    FDA70N20

    Abstract: No abstract text available
    Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDA70N20 FDA70N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching


    Original     		FDB15N50 PDF

    fdd7n25

    Abstract: fdd7n25lz
    Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD7N25LZ FDD7N25LZ fdd7n25 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides


    Original     		FDPF17N60NT PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 m Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDP26N40 FDP26N40 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDP75N08A O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state


    Original     		FDP8N50NZU FDPF8N50NZU 50nsec PDF

    FDPF8N50

    Abstract: FDPF8N50NZU FDP8N50NZU
    Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state


    Original     		FDP8N50NZU FDPF8N50NZU FDPF8N50NZU FDPF8N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD6N25 N-Channel UniFETTM MOSFET 200 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD6N25 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		FDD5N60NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 |Yfs|: forward transfer admittance |Yfs| = ΔID/ΔVGS


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDPF5N50T PDF

    Untitled

    Abstract: No abstract text available
    Text: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 0.9 Ω (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDU6N25 PDF

    Mosfet application note fairchild

    Abstract: No abstract text available
    Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5  Features Description • RDS on = 1.38  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		FDD5N50NZ FDD5N50NZ Mosfet application note fairchild PDF

    FDD4N60NZ

    Abstract: No abstract text available
    Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5  Features Description • RDS on = 1.9  (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		FDD4N60NZ FDD4N60NZ PDF

    dpak mosfet

    Abstract: FDD3N50NZ
    Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		FDD3N50NZ FDD3N50NZ dpak mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Ω Features Description • RDS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		FDD5N50NZ PDF

    FDT3N40

    Abstract: No abstract text available
    Text: FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description • RDS on = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDT3N40 FDT3N40 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDA16N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		FDD4N60NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50 N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD5N50 PDF