AN2170
Abstract: MOSFET Device Effects on Phase Node Ringing snubber circuit for mosfet Snubber circuit Design RC snubber mosfet design
Text: AN2170 APPLICATION NOTE MOSFET Device Effects on Phase Node Ringing in VRM Power Converters INTRODUCTION The growth in production volume of industrial equipment e.g., power DC-DC converters devoted to lowmedium-voltage applications has dramatically increased in recent years. This widespread increase occurred along with a similar production increase of power MOSFET devices, due to their higher switching
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AN2170
AN2170
MOSFET Device Effects on Phase Node Ringing
snubber circuit for mosfet
Snubber circuit Design
RC snubber mosfet design
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MOSFET Device Effects on Phase Node Ringing
Abstract: 300khz mosfet driver IC IRF7805
Text: A Solution to Simplify 60A Multiphase Designs By John Lambert & Chris Bull, International Rectifier, USA As presented at PCIM 2001 Today’s servers and high-end desktop computer CPUs require peak currents of around 60A-80A and next generation processors will be in the order of 100A. Similarly, the transient response in today’s CPUs is in the
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0A-80A
00A/us.
iP2001
IRF7805
PD-91746C,
MOSFET Device Effects on Phase Node Ringing
300khz mosfet driver IC
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S1-0248
Abstract: D2140
Text: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769CD
18-Jul-08
S1-0248
D2140
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Self-Oscillating Flyback mosfet
Abstract: A4401 A4401K A4401KL-T vmosfet MOSFET Device Effects on Phase Node Ringing
Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components
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A4401
Self-Oscillating Flyback mosfet
A4401K
A4401KL-T
vmosfet
MOSFET Device Effects on Phase Node Ringing
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Self-Oscillating Flyback mosfet
Abstract: snubber circuit for mosfet LLC
Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components
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A4401
Self-Oscillating Flyback mosfet
snubber circuit for mosfet LLC
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PDF
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SiC769CD
Abstract: 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR
Text: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769CD
18-Jul-08
100C
MLP66-40
SiC769CD-T1-E3
IHLP-5050EZ
SiC769DB
intel drMOS compliant
MOSFET Device Effects on Phase Node Ringing in VR
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Untitled
Abstract: No abstract text available
Text: A4401 Automotive Quasi-Resonant Flyback Control IC Description Features and Benefits This device provides all the necessary control functions to provide the power rails for driving a vacuum fluorescent display VFD using minimal external components. The power
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A4401
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Self-Oscillating Flyback mosfet
Abstract: A4401 Self Oscillating Flyback Converters AEC-Q100-002 IPC7351 JESD51-5 STPS160U Self-Oscillating Flyback Flyback Self-Oscillating three phase vfd circuit diagram
Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components
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A4401
Self-Oscillating Flyback mosfet
A4401
Self Oscillating Flyback Converters
AEC-Q100-002
IPC7351
JESD51-5
STPS160U
Self-Oscillating Flyback
Flyback Self-Oscillating
three phase vfd circuit diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components
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A4401
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Self-Oscillating Flyback Converters
Abstract: Self-Oscillating Flyback mosfet A4401KL-T "Vacuum Fluorescent Display" 38 PIN vacuum fluorescent display self resonant driver A4401 AEC-Q100-002 STPS160U Operational Transconductance Amplifier
Text: A4401 Automotive Low Noise Vacuum Fluorescent Display Power Supply Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components
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A4401
Self-Oscillating Flyback Converters
Self-Oscillating Flyback mosfet
A4401KL-T
"Vacuum Fluorescent Display"
38 PIN vacuum fluorescent display
self resonant driver
A4401
AEC-Q100-002
STPS160U
Operational Transconductance Amplifier
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SiC762CD
Abstract: SiC762 100C MLP66-40 intel drMOS compliant X640P
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC762CD
18-Jul-08
SiC762
100C
MLP66-40
intel drMOS compliant
X640P
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FA04
Abstract: OP37 PA04 PA07 MOSFET AMPLIFIER jerry steele mosfet op amp
Text: S im p le C ir c u it D esig n T e c h n iq u e s A p p lie d To N e w MOSFET P o w e r Op Amps P r o d u c e H ig h L i n e a r i t y A n d B a n d w id th W ith o u t S a c r if ic in g A c c u ra c y A n d S ta b ility . D esign Techniques fo r MOSFET P ow er Op Amps
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OCR Scan
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gain-of-100
FA04
OP37
PA04
PA07
MOSFET AMPLIFIER
jerry steele
mosfet op amp
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Untitled
Abstract: No abstract text available
Text: WIDEBAND, LOW DISTORTION TECHNIQUES APPLICATION NOTE 17 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 WIDEBAND, LOW DISTORTION TECHNIQUES FOR MOSFET POWER AMPS Shake table systems, function generators and acoustic instruments
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546-APEX
100pF
AN17U
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acoustic filter 40khz
Abstract: resistor 1K 300w amplifier OP37 PA04 PA07 Applications of rc coupled amplifier OP AMP
Text: WIDEBAND, LOW DISTORTION TECHNIQUES APPLICATION NOTE 17 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 WIDEBAND, LOW DISTORTION TECHNIQUES FOR MOSFET POWER AMPS Shake table systems, function generators and acoustic instruments
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546-APEX
100pF
AN17U
acoustic filter 40khz
resistor 1K
300w amplifier
OP37
PA04
PA07
Applications of rc coupled amplifier
OP AMP
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Untitled
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769
SiC769CD
11-Mar-11
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MLP66-40
Abstract: Diode Marking LG
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769
SiC769CD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MLP66-40
Diode Marking LG
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IHLP5050FDER
Abstract: drMOS compatible SiC762CD
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC762CD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IHLP5050FDER
drMOS compatible
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Untitled
Abstract: No abstract text available
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC762CD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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100C
Abstract: MLP66-40 SiC769 SiC769CD SiC769CD-T1-E3
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC769
11-Mar-11
100C
MLP66-40
SiC769
SiC769CD
SiC769CD-T1-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC762CD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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Original
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SiC762CD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC762CD
11-Mar-11
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