MOSFET FK25SM Search Results

MOSFET FK25SM Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET FK25SM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FK25SM-6 Abstract: No abstract text available Text: MITSUBISHI Nch POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE FK25SM-6 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 300V	Original	FK25SM-6 150ns FK25SM-6	PDF
FK25SM-5 Abstract: No abstract text available Text: MITSUBISHI Nch POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 250V	Original	FK25SM-5 150ns FK25SM-5	PDF
FK25SM-5 Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF
FK25SM-6 Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF
mosfet fs series Abstract: TO-3P Text: •NEW HIGH VOLTAGE POWER MOSFET FS SERIES CONTINUED IBUILT-IN HIGH SPEED DIODE POWER MOSFET FK SERIES Electrical characteristics (TYP.) Max. ratings Type No. V « {¥> iß w FK16UM-5 ★ FKI6VS-5 ★ FKI6KM -5 ★ FK16SM-5 ★ FK20UM-5 ★ FK20VS-5 ■	OCR Scan	O-220 O-220S O-220FN O-220 T0220S mosfet fs series TO-3P	PDF
MOSFET FK25SM Abstract: No abstract text available Text: MITSUBISHI Neh POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING Dimensions in mm w O '2 4 • VOSS . 250V • rDS ON (MAX) . 0 .1 6 Í 2	OCR Scan	FK25SM-5 150ns 571Q-\2 571Q1 571Q2 MOSFET FK25SM	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI Neh POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 O UTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w r . .2 5 0 V	OCR Scan	FK25SM-5 150ns 57KH23	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI Neh POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE FK25SM-6 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w ' V d s s . .3 0 0 V	OCR Scan	FK25SM-6 150ns 571Q1	PDF
PIC robot Abstract: No abstract text available Text: MITSUBISHI Neh POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE FK25SM-6 OUTLINE DRAWING Dimensions in mm 4.5. 15.9MAX. 1.5 r a ol ‘OjL O 3.2 m 5 .4 5 0.6 jGd fed bk GATE DRAIN »V d s s .3 0 0 V	OCR Scan	FK25SM-6 150ns PIC robot	PDF
Untitled Abstract: No abstract text available Text: m UBEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt Form Ddtd Selector Guide Discrete MOSFET - Medium Voltage (continued) FK Series MOSFETs (250 ~ 600V) Fast Recovery Diode (trr = 150nS) Maximum Ratings, Tc = 25°C	OCR Scan	150nS) FK16UM-5 FK16VS-5 FK16KM-5 FK16SM-5 FK20UM-5 FK20VS-5 FK20KM-5 FK20SM-5 FK25SM-5	PDF