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    MOSFET GATE SOURCE VOLTAGE 20V Search Results

    MOSFET GATE SOURCE VOLTAGE 20V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET GATE SOURCE VOLTAGE 20V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE l02

    Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
    Text: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)


    Original     		PDF CMLDM7002A CMLDM7002AJ* CMLDM7002AJ 2N7002 CMLDM7002A: 200mA, DIODE l02 code l02 2n7002 pinout marking 02J sot transistor pinout marking l02

    CMLDM7002AJ

    Abstract: 2N7002 CMLDM7002A marking 02J
    Text: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)


    Original     		PDF CMLDM7002A CMLDM7002AJ OT-563 CMLDM7002AJ 2N7002 200mA, 400mA CMLDM7002A marking 02J

    CMXDM7002A

    Abstract: X02A 2N7002
    Text: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


    Original     		PDF CMXDM7002A OT-26 CMXDM7002A 2N7002 500mA 500mA, 200mA 200mA, 400mA 05-December X02A

    c702a

    Abstract: No abstract text available
    Text: CMPDM7002A SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


    Original     		PDF CMPDM7002A 2N7002 C702A OT-23 500mA 500mA, 200mA 200mA, c702a

    DIODE l02

    Abstract: dual mosfet "marking code 30" marking l02
    Text: CMLDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


    Original     		PDF CMLDM7002A 2N7002 OT-563 500mA 500mA, 200mA 200mA, 400mA 01-February DIODE l02 dual mosfet "marking code 30" marking l02

    X02A

    Abstract: CMXDM7002A 2N7002
    Text: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


    Original     		PDF CMXDM7002A OT-26 CMXDM7002A 2N7002 500mA, 200mA 200mA, 400mA 14-November X02A

    RD10

    Abstract: WTV3585
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		PDF WTV3585 03-Apr-07 RD10 WTV3585

    Untitled

    Abstract: No abstract text available
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		PDF WTV3585 OT-26 03-Apr-07

    CMLDM7002AG

    Abstract: CMLDM7002AJ CMLDM7002A
    Text: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


    Original     		PDF CMLDM7002A CMLDM7002AG* CMLDM7002AJ OT-563 200mA CMLDM7002A: CMLDM7002AG CMLDM7002AJ CMLDM7002A

    WTL2622

    Abstract: No abstract text available
    Text: WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN P b Lead Pb -Free DRAIN CURRENT 520mAMPERES DRAIN SOURCE VOLTAGE 50 VOLTAGE 1 GATE 5 SOURCE Features: 6 4 DRAIN * Low Gate charge * Surface Mount Package 1 2 5 4 3 SOT-26 3 GATE 2 SOURCE Maximum Ratings (TA


    Original     		PDF WTL2622 520mAMPERES OT-26 300us, 19-Sep-05 WTL2622

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET with schottky diode ELM14916AA-N •General description ■Features ELM14916AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage


    Original     		PDF ELM14916AA-N ELM14916AA-N

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET with schottky diode ELM14912AA-N •General description ■Features ELM14912AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage


    Original     		PDF ELM14912AA-N ELM14912AA-N

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET with schottky diode ELM14914AA-N •General description ■Features ELM14914AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage


    Original     		PDF ELM14914AA-N ELM14914AA-N

    Untitled

    Abstract: No abstract text available
    Text: MA2518C10000000 Dual N-Ch 20V Fast Switching MOSFET s Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 4 Rev A.01 D032610 4


    Original     		PDF MA2518C10000000 D032610

    IRF620S

    Abstract: No abstract text available
    Text: IRF620S Power MOSFET VDSS = 200V, RDS on = 0.80 ohm, ID = 5.2 A D Drain G Gate Source S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise IGSS Gate to Source Leakage Current VGS(th) Gate Threshold Voltage Gate Charge


    Original     		PDF IRF620S 25VDC, 100VDC, 160VDC, 10VDC IRF620S

    p-channel mosfet

    Abstract: P CHANNEL POWER MOSFET P-Channel MOSFET -800v smd transistor 26
    Text: Transistors IC SMD Type Complementary MOSFET Half-Bridge N- and P-Channel KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25


    Original     		PDF KI4500BDY p-channel mosfet P CHANNEL POWER MOSFET P-Channel MOSFET -800v smd transistor 26

    smd diode 74a

    Abstract: BR 26 diode smd 8a 046 KRF7313 58A1 78 DIODE SMD smd transistor 26 smd diode fr
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7313 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Symbol Rating Drain- Source Voltage Parameter VDS 30 Gate-to-Source Voltage


    Original     		PDF KRF7313 smd diode 74a BR 26 diode smd 8a 046 KRF7313 58A1 78 DIODE SMD smd transistor 26 smd diode fr

    4501ss

    Abstract: rd15 WTK4501 RD 15 4501s
    Text: WTK4501 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES 7,8 DRAIN P b Lead Pb -Free 2 GATE 5,6 DRAIN P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES 3 SOURCE 1 1 SOURCE Features:


    Original     		PDF WTK4501 07-May-07 4501ss rd15 WTK4501 RD 15 4501s

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type N- and P-Channel 20-V D-S MOSFET KI4511DY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25


    Original     		PDF KI4511DY

    smd diode 39a

    Abstract: No abstract text available
    Text: IC IC SMD Type P-Channel 2.5-V G-S MOSFET KI5441DC Features TrenchFET Power MOSFET 2.5-V Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150


    Original     		PDF KI5441DC smd diode 39a

    WTN9973

    Abstract: No abstract text available
    Text: WTN9973 Surface Mount N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.9 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN 60 VOLTAGE 1 GATE 4 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE Features: 1 2 3 SOT-223 *Super high dense cell design for low RDS ON RDS(ON)<80mΩ@VGS=10V


    Original     		PDF WTN9973 OT-223 OT-223 19-Apr-05 WTN9973

    2sk2859

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel Silicon MOSFET 2SK2859 Features Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage


    Original     		PDF 2SK2859 2sk2859

    Untitled

    Abstract: No abstract text available
    Text: 6HP04MH Ordering number : ENA0368 P-Channel Silicon MOSFET 6HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC


    Original     		PDF 6HP04MH ENA0368 900mm2â 6HP04MH/D

    Untitled

    Abstract: No abstract text available
    Text: 6HN04MH Ordering number : ENA0365A N-Channel Silicon MOSFET 6HN04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC


    Original     		PDF 6HN04MH ENA0365A 900mm2â 6HN04MH/D