2N6901
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM
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2N6901
O-205AF)
2N6901
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Untitled
Abstract: No abstract text available
Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G
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24N100
247TM
IXFK24N100/IXFX24N100
405B2
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ixfk24n100
Abstract: No abstract text available
Text: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM
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24N100
247TM
IXFK24N100/IXFX24N100
405B2
ixfk24n100
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MD 202
Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5
Text: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
MD 202
IXFX55N50
IXFK55N50
SOT-227B Outline
IXFN55N50
55N50
"SOT-227 B" dimensions
55n5
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
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Untitled
Abstract: No abstract text available
Text: AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM
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AOT10T60P/AOB10T60P/AOTF10T60P
O-220
O-263
O-220F
AOT10T60P
AOB10T60P
AOTF10T60P
AOT10T60PL
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PSMG60
Abstract: No abstract text available
Text: ECO-PACTM 2 MOSFET Module PSMG 60/08 G S Preliminary Data Sheet VDSS = ID25 = RDS on = ≤ trr D 800 V 60 A 0.12 Ω 250 ns MOSFET (data related to single chip) Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt TJ = 25 °C to 150 °C
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage
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2N6851
-200V
200mW/Â
O-205AD)
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Untitled
Abstract: No abstract text available
Text: AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 145A
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AOT20C60/AOB20C60/AOTF20C60
O-220
O-263
O-220F
AOT20C60
AOTF20C60
AOB20C60
AOT20C60L
AOB20C60Late
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage
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2N6851
-200V
200mW/Â
O-205AD)
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Untitled
Abstract: No abstract text available
Text: BS107P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)
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BS107P
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Untitled
Abstract: No abstract text available
Text: ZVNL120AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)180m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)
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ZVNL120AM1
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Untitled
Abstract: No abstract text available
Text: ZVN2220B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)1.85 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)
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ZVN2220B
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Untitled
Abstract: No abstract text available
Text: BS107PT Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)
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BS107PT
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Untitled
Abstract: No abstract text available
Text: ZVP2120AM1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)
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ZVP2120AM1
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Untitled
Abstract: No abstract text available
Text: RN3030R Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)
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RN3030R
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Untitled
Abstract: No abstract text available
Text: IXTL21P20 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)175 Minimum Operating Temp (øC)
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IXTL21P20
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Untitled
Abstract: No abstract text available
Text: 2SK241 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20.0 V(BR)GSS (V) I(D) Max. (A)30.0m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)
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2SK241
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Untitled
Abstract: No abstract text available
Text: RN1020 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)
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RN1020
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Untitled
Abstract: No abstract text available
Text: RN3030 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)
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RN3030
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Untitled
Abstract: No abstract text available
Text: SDFN9240 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)
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SDFN9240
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Untitled
Abstract: No abstract text available
Text: ZVP2120L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)
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ZVP2120L
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Untitled
Abstract: No abstract text available
Text: AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max
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AOB12T60P/AOTF12T60P
O-263
O-220F
AOB12T60P
AOTF12T60P
AOB12T60PL
AOTF12T60PL
O-263
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PDF
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Untitled
Abstract: No abstract text available
Text: AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 48A RDS(ON),max
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AOTF12T50P
O-220F
O-220F
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