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    MOSFET IRF 630 Search Results

    MOSFET IRF 630 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF 630 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet PDF

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		IRF9140 IRF9230 IRF9240 irf440 PDF

    IRF series

    Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
    Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs


    OCR Scan     		PDF

    IRFR9120N

    Abstract: IRFU9120N
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V IRFR/U9120NPbF O-252AA) EIA-481 EIA-541. IRFR9120N IRFU9120N PDF

    irf 100v 300A

    Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. irf 100v 300A MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    ex 3863

    Abstract: MOSFET IRF 380 L6569A electronic ballast 18w cfl lamp L6569 1W zener diode OF SGS-THOMSON 47uf 250v CAPACITOR
    Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR PRELIMINARY DATA TECHNOLOGY: BCD ”OFF-LINE” FLOATING SUPPLY VOLTAGE UP TO 600V GND REFERRED SUPPLY VOLTAGE UP TO 18V DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA


    Original     		L6569 L6569A 270mA 170mA L6569/L6569A L6569D/L6569AD ex 3863 MOSFET IRF 380 L6569A electronic ballast 18w cfl lamp L6569 1W zener diode OF SGS-THOMSON 47uf 250v CAPACITOR PDF

    L6569AD

    Abstract: power supply 220v- 12v circuit diagram D96IN419 zener diode zpd 12 irf 405
    Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR PRELIMINARY DATA TECHNOLOGY: BCD ”OFF-LINE” FLOATING SUPPLY VOLTAGE UP TO 600V GND REFERRED SUPPLY VOLTAGE UP TO 18V DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA


    Original     		L6569 L6569A 270mA 170mA L6569/L6569A L6569D/L6569AD L6569AD power supply 220v- 12v circuit diagram D96IN419 zener diode zpd 12 irf 405 PDF

    E2006-B4

    Abstract: electronic ballast 18w cfl lamp L6569A L6569 220V Driver CFL lamp 002-2 SYLVANIA L6569 equivalent BYW100-100 6302A
    Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR TECHNOLOGY: BCD ”OFF-LINE” FLOATING SUPPLY VOLTAGE UP TO 600V GND REFERRED SUPPLY VOLTAGE UP TO 18V DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA VERY LOW START UP CURRENT: 150µA


    Original     		L6569 L6569A 270mA 170mA L6569/L6569A L6569D/L6569AD E2006-B4 electronic ballast 18w cfl lamp L6569A L6569 220V Driver CFL lamp 002-2 SYLVANIA L6569 equivalent BYW100-100 6302A PDF

    MOSFET IRF 630

    Abstract: IRF630 f630 IRF630R 633R
    Text: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*


    OCR Scan     		IRF630R/631R/632R/633R IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R MOSFET IRF 630 IRF630 f630 IRF630R 633R PDF

    irf 405

    Abstract: l6569 irf ballast MOSFET IRF 380 electronic ballast 18w cfl lamp Zener ZPD L6569A BYW100-100 PTC150
    Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR TECHNOLOGY: BCD "OFF-LINE" FLOATING SUPPLY VOLTAGE UP TO 600V GND REFERRED SUPPLY VOLTAGE UP TO 18V DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA VERY LOW START UP CURRENT: 150µA


    Original     		L6569 L6569A 270mA 170mA L6569/L6569A L6569D/L6569AD irf 405 l6569 irf ballast MOSFET IRF 380 electronic ballast 18w cfl lamp Zener ZPD L6569A BYW100-100 PTC150 PDF

    10Kf6 diode

    Abstract: ir2155 40w electronic ballast IR2155 equivalent T106-26 IR2151 DT 94-3 self oscillating Electronic ballast 40W 10KF6 ir2155 design tips IR2111 APPLICATIONS transistor IRF 630
    Text: Application Notes AN-995A Electronic Ballasts Using the Cost-Saving IR215X Drivers Introduction Electronic ballast circuits have recently undergone a revolution in sophistication from the early bipolar designs of ten years ago. This has been brought about


    Original     		AN-995A IR215X IR2151 IR2111 IRF820 1N4007 10DF6 250VAC T106-26 EE-30Z 10Kf6 diode ir2155 40w electronic ballast IR2155 equivalent T106-26 IR2151 DT 94-3 self oscillating Electronic ballast 40W 10KF6 ir2155 design tips IR2111 APPLICATIONS transistor IRF 630 PDF

    BYW100-100

    Abstract: CFL lamp 100NF 630V L6569 L6569A L6569AD L6569D irf 146 diode 1N4006 specifications PTC 15 T 630V
    Text: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA


    Original     		L6569 L6569A 270mA 170mA L6569D L6569AD BYW100-100 CFL lamp 100NF 630V L6569 L6569A L6569AD L6569D irf 146 diode 1N4006 specifications PTC 15 T 630V PDF

    IRF 042

    Abstract: irf 540 mosfet IRL3803 IRLI3803
    Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		1320B IRLI3803 O-220 IRF 042 irf 540 mosfet IRL3803 IRLI3803 PDF

    MOSFET IRF 380

    Abstract: No abstract text available
    Text: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		IRFR/U9120NPbF IRFR9120N) IRFU9120N) -100V O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 380 PDF

    W922

    Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
    Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24E O-220 W922 IRFIZ24E IRFZ24N EV700 irf*24n PDF

    IRFIZ34N

    Abstract: IRFZ34N MOSFET 150 N IRF
    Text: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ34N O-220 IRFIZ34N IRFZ34N MOSFET 150 N IRF PDF

    IRFIZ46N

    Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ46N O-220 IRFIZ46N IRFZ46N MOSFET IRF 630 IRFZ46N equivalent PDF

    irf 480

    Abstract: IRFIZ24E IRFZ24N IRFz24n equivalent
    Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24E O-220 irf 480 IRFIZ24E IRFZ24N IRFz24n equivalent PDF

    irf 44 n

    Abstract: 1329B IRLIZ34N IRLZ34N
    Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


    Original     		1329B IRLIZ34N O-220 irf 44 n 1329B IRLIZ34N IRLZ34N PDF

    IRFIZ24N

    Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet PDF

    Equivalent IRF 44

    Abstract: ultra low igss pA IRL2505 IRLI2505
    Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		IRLI2505 O-220 Equivalent IRF 44 ultra low igss pA IRL2505 IRLI2505 PDF

    1501a

    Abstract: IRFZ24N IRFIZ24N irf 480
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24N O-220 1501a IRFZ24N IRFIZ24N irf 480 PDF