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    MOSFET IRF250 Search Results

    MOSFET IRF250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AVALANCHE TRANSISTOR

    Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
    Text: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		IRF250 O-204AE TB334 TA09295. AVALANCHE TRANSISTOR transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR PDF

    IRF250

    Abstract: mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a
    Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)


    Original     		IRF250 state3500 300ms, IRF250 mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)


    Original     		IRF250 300ms, PDF

    IRF250SM

    Abstract: No abstract text available
    Text: SEME IRF250SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 14A 0.100W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


    Original     		IRF250SM 220SM 00A/ms 300ms, IRF250SM PDF

    IRF250SM

    Abstract: No abstract text available
    Text: im if Pi im SEME IRF250SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V DSS 0.25 14A I D(cont) 3.0 0.100Û ^D S (on) FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF


    OCR Scan     		IRF250SM O-220SM 00A/ns 300ms, IRF250SM PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250SM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100# IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition)300m Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)-55


    Original     		IRF250SM PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ


    Original     		IRF250R PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55


    Original     		IRF250 PDF

    Untitled

    Abstract: No abstract text available
    Text: nil Étti IN I SEM E IRF250 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 200V 30A V DSS ID(cont) 0.085Q ^D S (on) FEATURES M * 20.32 (0.800) 118.80 a an in ia < w (0.740) dia. • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ • SIMPLE DRIVE REQUIREMENTS


    OCR Scan     		IRF250 200mJ Dra20 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671 PDF

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    pf 4fl datasheet

    Abstract: IRF250 SFF250
    Text: SsDII PRELIMINARY SFF250 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 30 AMP 200 VOLTS 0.085 Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with poly silicon gate


    OCR Scan     		670-SSDI SFF250 IRF250 pf 4fl datasheet SFF250 PDF

    IRF250

    Abstract: SFF250C
    Text: mm PRELIMINARY SFF250C SOLID STATE DEVICES, INC TCf 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 ,f «I 30 AMP 200 VOLTS 0.085 Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with poly silicon gate


    OCR Scan     		670-SSDI SFF250C IRF250 O-254C SFF250C PDF

    IRF250

    Abstract: IRF250 power MOSFET IRF250 MOSFET
    Text: §M>II PRELIMINARY SFF250/61 SOLID STATE DEVICES, INC ; I ‘i 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 30 AMP 200 VOLTS 0.085 Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with poly silicon gate


    OCR Scan     		670-SSDI SFF250/61 IRF250 IRF250 power MOSFET IRF250 MOSFET PDF

    1RFP250

    Abstract: IRFC250 1rfp254 IRF254 085n IRF250 2N6765 2N6766
    Text: 4686226 I X Y S CORP 03 ¡j 4t.0fc.22Li □0D02Dfl □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a RDS(on) -


    OCR Scan     		IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/IRFP253 IRF254/IRFP254 IRFC250 1RFP250 IRFC250 1rfp254 IRF254 085n IRF250 2N6765 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		IRF250SMD IRFN250" IRFN250SMD IRFN250SMD-JQR-B O276AB) 3500pF 190nC 190nC PDF

    IRF250SMD

    Abstract: IRF250S
    Text: IRF250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		IRF250SMD 00A/ms 300ms, IRF250SMD IRF250S PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		IRF250SMD 00A/ms 300ms, PDF

    3849

    Abstract: No abstract text available
    Text: 4686226 I X Y S CORP □IXYS ^ d F J M böbS Sti Q je j- ^ u . TECHNICAL DATA SHEET August 1988 DATA SHE ET NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • • . 2 0 0 V


    OCR Scan     		IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/Ã RFP253 IRF254/IRFP254 IRFC250 3849 PDF

    irf250 dc motor

    Abstract: IRF250 ic data
    Text: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a


    OCR Scan     		IRFC250: 2N6766 2N6765 IRF250/IRFP250 IRF251/IRFP251 IRF252/IRFP252 1RF253/IRFP253 IRF254/IRFP254 IRFC250 irf250 dc motor IRF250 ic data PDF

    irf630 irf640

    Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
    Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший


    Original     		220AB 0RFP25N05 RFP50N05 RFP22N10 RFP40N10 IRFP450 IRFP460 IRFPG40 IRF9510 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFN250SMD 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 200V 27.4A Ω 0.100Ω FEATURES 1 6 .0 2 (0 .6 3 1 )


    Original     		IRFN250SMD 2N7225U1 300ms, PDF