AN-994
Abstract: IRF3415 IRF3415S IRF530S st ld 33 22A17
Text: Previous Datasheet Index Next Data Sheet PD- 9.1509A IRF3415S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 150V
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IRF3415S
AN-994
IRF3415
IRF3415S
IRF530S
st ld 33
22A17
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IRF3415S
Abstract: AN-994 IRF3415 IRF3415L
Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A
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91509C
IRF3415S/L
IRF3415S)
IRF3415L)
IRF3415S
AN-994
IRF3415
IRF3415L
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AM 22A
Abstract: 1477B IRF3415
Text: Previous Datasheet Index Next Data Sheet PD 9.1477B IRF3415 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description
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1477B
IRF3415
O-220
AM 22A
1477B
IRF3415
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AN-994
Abstract: IRF3415 IRF3415L IRF3415S
Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A
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91509C
IRF3415S/L
IRF3415S)
IRF3415L)
AN-994
IRF3415
IRF3415L
IRF3415S
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PDF
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IRF34
Abstract: IRF3415 mosfet irf3415
Text: FOR REVIEW ONLY IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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IRF3415
O-220
O-220AB
IRF34
IRF3415
mosfet irf3415
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PDF
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IRF3415
Abstract: K 9008
Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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Original
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91477E
IRF3415
O-220
poIRF3415
O-220AB
IRF3415
K 9008
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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91477E
IRF3415
O-220
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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91477E
IRF3415
O-220
O-220AB
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PDF
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IRF3415
Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
Text: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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91477D
IRF3415
O-220
IRF3415
IRF3415 circuit
IRF3415 equivalent
1810ms
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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IRF3415PbF
O-220
O-220AB.
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94963 IRF3415PbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.042" G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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IRF3415PbF
O-220
O-220AB
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PDF
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f1010
Abstract: IRF3415PBF
Text: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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Original
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IRF3415PbF
O-220
O-220AB
f1010
IRF3415PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier
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IRF3415PbF
O-220
O-220AB.
O-220AB
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PDF
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IRG41BC20W
Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles
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O-220
IR2130
230VAC
IR2133
460VAC
IR2233
IR2137/IR2171
IRG41BC20W
IRG41BC20UD
Drive circuit for IGBT using IR2130
IR2184 application notes
IR2110 driver CIRCUIT FOR INVERTERS
DC MOTOR SPEED CONTROL USING IGBT
IRG41BC30W
IR2181 application notes
IR2103 bldc driver
1KW dc motor
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PDF
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AN-994
Abstract: IRF3415
Text: IRF3415S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs
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IRF3415S/L
AN-994
IRF3415
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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PDF
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b-bios
Abstract: No abstract text available
Text: PD 9.1477C International ICR Rectifier IRF3415 PRELIMINARY HEXFET^ Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS= 150V R DS on = Description Id = 0.042Í2
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OCR Scan
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1477C
IRF3415
O-220
b-bios
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PDF
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RF1010
Abstract: diode body marking A 4
Text: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V
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OCR Scan
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IRF3415
O-220
RF1010
diode body marking A 4
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-91509C International IGR Rectifier IRF3415S/L HEXFET Power MOSFET • • • • • • A dvanced Process Technology Surface M ount IRF3415S Low-profile through-hole (IRF3415L) 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated
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OCR Scan
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PD-91509C
IRF3415S/L
IRF3415S)
IRF3415L)
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PDF
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MARKING J9B
Abstract: No abstract text available
Text: PD- 9.1509B International I R Rectifier IRF3415S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description V d s s = 15 0 V
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OCR Scan
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1509B
IRF3415S
MARKING J9B
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2
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OCR Scan
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PD-91477D
IRF3415
O-220
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PDF
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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OCR Scan
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SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
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PDF
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sot23 BS170
Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120
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OCR Scan
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BS107
BSS123
BS170
BSS138
BS108
BSN304
BSS89
IRFD310
IRFD420
IRFD210
sot23 BS170
2SK2671
P3NB60
IXFN27N80
IRFL014N
STP22NE10L
irf6348
IRF7305
rfp40n
IXTN21N100
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PDF
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IRF3415 equivalent
Abstract: pn 222A IRFI3415 IRF3415 IRFI840G
Text: International IOR Rectifier pd-9.1624 IRFI3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS D Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V Ds s = 1 5 0 V
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OCR Scan
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IRFI3415
O-220
IRF3415 equivalent
pn 222A
IRFI3415
IRF3415
IRFI840G
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PDF
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