IRF360
Abstract: IRF3601 mosfet irf360
Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF360
O-204AA/AE)
IRF360
IRF3601
mosfet irf360
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IRF360
Abstract: No abstract text available
Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF360
O-204AA/AE)
IRF360
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flSS455
irf*234 n
IRFBE40
IRF540 p-channel MOSFET
IRFBG40
irf540 800v
irfz24 mosfet
IRFCG50
IRFC034
HEXFET Guide
international rectifier d10
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IRFP360LC
Abstract: IRFPE30
Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω
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IRFP360LC
12-Mar-07
IRFP360LC
IRFPE30
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IRF360LC
Abstract: No abstract text available
Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω
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IRFP360LC
08-Mar-07
IRF360LC
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IRF360LC
Abstract: IRFP360LC IRFPE30
Text: Previous Datasheet Index Next Data Sheet PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFP360LC
staFPE30
IRF360LC
IRFP360LC
IRFPE30
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irf360lc
Abstract: ID 9302 IRFP360LC IRFPE30
Text: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω
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IRFP360LC
IRFPE30
irf360lc
ID 9302
IRFP360LC
IRFPE30
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IRF360LC
Abstract: No abstract text available
Text: International PD' 9-,23° lo g Rectifier_ IR FP 360LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjssi C qss>Crss Isolated Central Mounting Hole Dynamic dv/dt Rated
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360LC
IRF360LC
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irf630 irf640
Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший
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220AB
0RFP25N05
RFP50N05
RFP22N10
RFP40N10
IRFP450
IRFP460
IRFPG40
IRF9510
irf630 irf640
IRF250N
Irfp250 irfp460
IRF6404
MOSFET IRF460
irf460 to-247
FET IRFP450
IRF510 mosfet irf640
MOSFET IRF460 TO 247
MOSFET IRF
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25AF 8 PINS
Abstract: No abstract text available
Text: ta o a a v i oos3i s 3 dhb • _ _ _ _ _ _ has IRF360 IRF362 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Features Package T 0 -2 0 4 A E • 25A and 22A, 400V BOTTOM VIEW • fDS on = 0 .2 0 ÎÎ and 0.25f2 • Single Pulse Avalanche Energy Rated
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IRF360
IRF362
IRF362
25AF 8 PINS
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RF360
Abstract: F362
Text: [3 h IRF360 IRF3 62 a f r r is N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Features Package T 0 -2 0 4 A E BOTTOM VIEW • 25A and 22A, 400V • rD S °n = 0 .2 0H and 0 .2 5 0 • Single Pulse Avalanche Energy Rated DRAIN f (FLANGE) SOURCE
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IRF360
IRF362
IRF360,
RF360
F362
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irf362
Abstract: IRF360 g141 BF - g142 AE 7851 diode G-135 m10 s rectifier mosfet irf360
Text: HE 0 I 4055452 OOCHlSâ 0 | Data Sheet No. PD-9.518A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED IRF360 IRF362 HEXFET TRANSISTORS N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International
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G-142
irf362
IRF360
g141
BF - g142
AE 7851 diode
G-135
m10 s rectifier
mosfet irf360
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IRFBE40
Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800
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IRFK2D054
IRFK2D150
IRFK2D250
IRFK2D350
IRFK2D450
IRFK2DC50
IRFK2DE50
IRFK3D150
IRFK3D250
IRFK3D350
IRFBE40
IRFBG40
MOSFET IRF460
IRLC140
irfc9024
IRFBF40
irlc120
IRLC014
IRFC9034
IRLC034
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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IRF9140
IRF9230
IRF9240
irf440
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IRF series
Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRF250
Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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00V/12A
IRF250
IXTH13P20
IXTP2N95
IXTP2N100A
IXTP2N95A
IXTP4N100
IXTP4N100A
IXTP4N90
IXTP4N90A
IXTP4N95
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IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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