Untitled
Abstract: No abstract text available
Text: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier
|
OCR Scan
|
IRF7313
muttiple-diEiA-481
EIA-541.
|
PDF
|
C123 j.s
Abstract: No abstract text available
Text: International HSR Rectifier PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss = 30V ^DS on = 0.0290 Top View Description
|
OCR Scan
|
IRF7313
C-124
C123 j.s
|
PDF
|
IRF7313
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1480 IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1
|
Original
|
IRF7313
IRF7313
|
PDF
|
PN channel MOSFET 10A
Abstract: No abstract text available
Text: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2
|
Original
|
IRF7313QPbF
EIA-481
EIA-541.
PN channel MOSFET 10A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: f H P D - 9 .1 4 8 0 A International IG R Rectifier IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channei MOSFET Surface Mount Fully Avalanche Rated Voss = 30V 52 a E r - i G2 n r — RDS on = 0.029Q Top View
|
OCR Scan
|
IRF7313
2b22D
|
PDF
|
EIA-541
Abstract: F7101 IRF7101 PN channel MOSFET 10A
Text: PD - 96125A IRF7313QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description
|
Original
|
6125A
IRF7313QPbF
extrem461
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
PN channel MOSFET 10A
|
PDF
|
f7101
Abstract: irf7313pbf MARKING CODE SO-8 PIC16F877A circuit diagram EIA-541 IRF7101
Text: PD - 95039 IRF7313PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description
|
Original
|
IRF7313PbF
EIA-481
EIA-541.
f7101
irf7313pbf
MARKING CODE SO-8
PIC16F877A circuit diagram
EIA-541
IRF7101
|
PDF
|
EIA-541
Abstract: MS-012AA
Text: PD - 96072A IRF7313UPbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description VDSS = 30V RDS on = 0.029Ω Top View Fifth Generation HEXFETs from International Rectifier
|
Original
|
6072A
IRF7313UPbF
thro461
EIA-481
EIA-541.
EIA-541
MS-012AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 91480B IRF7313 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
91480B
IRF7313
EIA-481
EIA-541.
|
PDF
|
IRF7313
Abstract: MS-012AA 1g26 91480
Text: PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V D1 D2 D2 RDS on = 0.029Ω T o p V iew Description
|
Original
|
IRF7313
IRF7313
MS-012AA
1g26
91480
|
PDF
|
IRF7313
Abstract: EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313
Text: PD - 91480B IRF7313 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
91480B
IRF7313
EIA-481
EIA-541.
IRF7313
EIA-541
F7101
IRF7101
MS-012AA
MOSFET IRF7313
|
PDF
|
IRF7313
Abstract: MS-012AA 1g26
Text: PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V D1 D2 D2 RDS on = 0.029Ω T o p V iew Description
|
Original
|
IRF7313
IRF7313
MS-012AA
1g26
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 9.1559A International IG R Rectifier IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
|
OCR Scan
|
IRF9956
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International IOR Rectifier P D - 9.1559 IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses • Fully Avalanche Rated V dss = 30V
|
OCR Scan
|
IRF9956
002bG04
|
PDF
|
|
|
IRF7303
Abstract: IRF7313 IRF7503 IRF9956
Text: PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V
|
Original
|
IRF9956
IRF7303
IRF7313
IRF7503
IRF9956
|
PDF
|
EIA-541
Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503
Text: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2
|
Original
|
IRF9956PbF
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
IRF7303
IRF7313
IRF7503
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2
|
Original
|
IRF9956PbF
EIA-481
EIA-541.
|
PDF
|
EIA-541
Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503
Text: PD - 95259 IRF9956PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2
|
Original
|
IRF9956PbF
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
IRF7303
IRF7313
IRF7503
|
PDF
|
IRF9956
Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503 MS-012AA
Text: PD - 91559B IRF9956 l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.10Ω
|
Original
|
91559B
IRF9956
EIA-481
EIA-541.
IRF9956
F7101
IRF7101
IRF7303
IRF7313
IRF7503
MS-012AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF7313PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 30 V 0.029 Ω 22 Qg (typical) ID nC 6.5 (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 A SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
|
Original
|
IRF7313PbF-1
IRF7313TRPbF-1
D-020D
|
PDF
|
analog switch circuit using mosfet
Abstract: APU3039 25TQC15M APU3039M APU3039VN IRF7458 IRF7466 Parallel operation mosfet 21kHz amplifier 300 Volt mosfet schematic circuit
Text: Technology Licensed from International Rectifier APU3039 SYNCHRONOUS PWM CONTROLLER WITH OVER CURRENT PROTECTION DESCRIPTION FEATURES Current Limit using Lower MOSFET Sensing Using the 6V internal regulator for charge pump circuit allows single supply operation up to 18V
|
Original
|
APU3039
400KHz
APU3039
400KHz,
3300pF
analog switch circuit using mosfet
25TQC15M
APU3039M
APU3039VN
IRF7458
IRF7466
Parallel operation mosfet
21kHz amplifier
300 Volt mosfet schematic circuit
|
PDF
|
6TPC330M
Abstract: 200khz power mosfet 8A 25TQC15M DO5022HC IRF7458 IRF7466 IRU3039 IRU3039CH IRU3039CHTR jc23
Text: Data Sheet No. PD94649 revB IRU3039 PbF SYNCHRONOUS PWM CONTROLLER WITH OVER CURRENT PROTECTION DESCRIPTION FEATURES Current Limit using Lower MOSFET Sensing Using the 6V internal regulator for charge pump circuit allows single supply operation up to 18V
|
Original
|
PD94649
IRU3039
400KHz
6TPC330M
200khz power mosfet 8A
25TQC15M
DO5022HC
IRF7458
IRF7466
IRU3039CH
IRU3039CHTR
jc23
|
PDF
|
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
|
Original
|
2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TPS2310 TPS2311 www.ti.com SLVS275G – FEBRUARY 2000 – REVISED NOVEMBER 2006 DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING FEATURES • • • • • • • • • • Dual-Channel High-Side MOSFET Drivers
|
Original
|
TPS2310
TPS2311
SLVS275G
20-Pin
|
PDF
|
