IRFZ48N
Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
Text: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES •Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION
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IRFZ48N
IRFZ48N
IRFz48N MOSFET
n-channel mosfet transistor
equivalent IRFZ48N
IRFZ48N equivalent
mosfet transistor
TRANSISTOR mosfet
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IRFZ48NL
Abstract: 1408B AN-994 IRFZ48NS
Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from
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1408B
IRFZ48NS)
IRFZ48NL)
IRFZ48NS
IRFZ48NL
IRFZ48NL
1408B
AN-994
IRFZ48NS
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1408B
Abstract: AN-994 IRFZ48NL IRFZ48NS IRFZ48N
Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from
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1408B
IRFZ48NS)
IRFZ48NL)
IRFZ48NS
IRFZ48NL
1408B
AN-994
IRFZ48NL
IRFZ48NS
IRFZ48N
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Untitled
Abstract: No abstract text available
Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from
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1408B
IRFZ48NS)
IRFZ48NL)
IRFZ48NS
IRFZ48NL
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AN-994
Abstract: IRFZ48N IRFZ48NS
Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1408 IRFZ48NS HEXFET Power MOSFET Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS = 55V
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IRFZ48NS
AN-994
IRFZ48N
IRFZ48NS
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marking F53
Abstract: IRFZ48N IRFZ48NL IRFZ48NS AN-994 Mosfet IRFZ48N
Text: PD - 9.1408A IRFZ48NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.016Ω G ID = 64A
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IRFZ48NS/L
IRFZ48NS)
IRFZ48NL)
marking F53
IRFZ48N
IRFZ48NL
IRFZ48NS
AN-994
Mosfet IRFZ48N
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IRFz48N MOSFET
Abstract: IRFZ48N equivalent IRFZ48N
Text: PD - 9.1406A IRFZ48N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier
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IRFZ48N
O-220
IRFz48N MOSFET
IRFZ48N
equivalent IRFZ48N
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IRFz48N MOSFET
Abstract: IRFZ48N
Text: PD - IRFZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 53A S Fifth Generation HEXFETs from International Rectifier
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IRFZ48N
O-220
IRFz48N MOSFET
IRFZ48N
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IRFZ48NPBF
Abstract: No abstract text available
Text: PD - 94991 IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description
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IRFZ48NPbF
O-220
for-220AB
IRFZ48NPBF
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Untitled
Abstract: No abstract text available
Text: PD - 94991A IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description
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4991A
IRFZ48NPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description
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94991B
IRFZ48NPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description
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94991B
IRFZ48NPbF
O-220
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f1010e
Abstract: AN-994 IRFZ48N IRFZ48NS
Text: PRELIMINARY PD 9.1408 IRFZ48NS HEXFET Power MOSFET Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS = 55V RDS on = 0.016Ω G ID = 53A S Fifth Generation HEXFETs from International Rectifier
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IRFZ48NS
f1010e
AN-994
IRFZ48N
IRFZ48NS
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IRFZ48N
Abstract: equivalent IRFZ48N
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
O-220AB
IRFZ48N
equivalent IRFZ48N
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Untitled
Abstract: No abstract text available
Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International
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IRFZ48N
O-220
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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IRF1010
Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
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IRFIZ48N
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
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IRFZ48N
Abstract: IRFz48N MOSFET
Text: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V
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IRFZ48NS
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Untitled
Abstract: No abstract text available
Text: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V
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IRFZ48NS)
IRFZ48NL)
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IRFZ48N
Abstract: No abstract text available
Text: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description
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IRFZ48N
IRFZ48N
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve
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IRFZ48N
O-220
0D5344b
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
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Untitled
Abstract: No abstract text available
Text: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
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