GRM31EB3YA106KA12L
Abstract: bd9673 BD9673EFJ 6pin transistor for 24v 3 amp bd96
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.11027EBT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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Original
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BD9673EFJ
11027EBT57
BD9673EFJ
R1120A
GRM31EB3YA106KA12L
bd9673
6pin transistor for 24v 3 amp
bd96
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PDF
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bd9673
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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Original
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BD9673EFJ
12027ECT57
BD9673EFJ
R1120A
bd9673
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PDF
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Untitled
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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BD9673EFJ
12027ECT57
R1120A
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PDF
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6PIN IC
Abstract: bd9673
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.11027EAT57 ●Description Output 3.0A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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Original
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BD9673EFJ
11027EAT57
BD9673EFJ
R1120A
6PIN IC
bd9673
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PDF
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Untitled
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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Original
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BD9673EFJ
12027ECT57
BD9673EFJ
R1120A
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PDF
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GRM31EB3YA106KA12L
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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Original
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BD9673EFJ
12027ECT57
BD9673EFJ
R1120A
GRM31EB3YA106KA12L
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PDF
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Untitled
Abstract: No abstract text available
Text: BD9673EFJ Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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Original
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BD9673EFJ
12027ECT57
R1120A
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PDF
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bd9673
Abstract: bd9763
Text: BD9673EFJ Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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Original
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BD9673EFJ
12027ECT57
BD9673EFJ
R1120A
bd9673
bd9763
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PDF
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EN8624
Abstract: 2SK3095LS
Text: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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2SK3095LS
EN8624
150described
EN8624
2SK3095LS
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PDF
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2SK3099LS
Abstract: K3099
Text: 2SK3099LS Ordering number : EN8628 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3099LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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2SK3099LS
EN8628
150described
2SK3099LS
K3099
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PDF
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BUK108-50GS
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.
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OCR Scan
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BUK108-50GS
BUK108-50GS
OT404
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PDF
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2SK3095LS
Abstract: No abstract text available
Text: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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2SK3095LS
EN8624
PW10s,
2SK3095LS
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PDF
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5V VSG MOSFET
Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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OCR Scan
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BUK203-50X
OT263
T0220
5V VSG MOSFET
high side switch
PowerMOS transistor TOPFET high side switch
BUK203-50X
TOPFET high side switch
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PDF
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japan 8622
Abstract: 2SK3093LS
Text: 2SK3093LS Ordering number : EN8622 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3093LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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2SK3093LS
EN8622
150described
japan 8622
2SK3093LS
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PDF
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2SK3097LS
Abstract: No abstract text available
Text: 2SK3097LS Ordering number : EN8626 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3097LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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Original
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2SK3097LS
EN8626
150described
2SK3097LS
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PDF
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2SK3097LS
Abstract: No abstract text available
Text: 2SK3097LS Ordering number : EN8626 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3097LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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Original
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2SK3097LS
EN8626
PW10s,
2SK3097LS
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PDF
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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PDF
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k3022
Abstract: 2SK3022
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Features ■ Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
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2002/95/EC)
2SK3022
K3022
k3022
2SK3022
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown • Low-voltage drive
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2002/95/EC)
2SK3022
K3022
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PDF
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K3022
Abstract: 2SK3022
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown • Low-voltage drive
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2002/95/EC)
2SK3022
K3022
2SK3022
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PDF
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K3024
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Package ■ Features • Code U-G2 • Pin Name 1: Gate 2: Drain 3: Source • Avalanche energy capability guaranteed • High-speed switching
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Original
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2002/95/EC)
2SK3024
K3024
K3024
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PDF
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K3024
Abstract: 2SK3024
Text: Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 0.8 max. 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1
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2SK3024
K3024
2SK3024
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PDF
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2SK3045
Abstract: k3045
Text: Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown
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2SK3045
2SK3045
k3045
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PDF
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K3048
Abstract: 2SK3048
Text: Power MOSFETs 2SK3048 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed • High-speed switching • Low on-resistance • No secondary breakdown 15.0±0.5 φ 3.2±0.1 ■ Applications
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2SK3048
K3048
2SK3048
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PDF
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