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    MOSFET K72 Search Results

    MOSFET K72 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET K72 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DS30120 Rev. 13

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002DW AEC-Q101 OT363 J-STD-020 MIL-STD-202, DS30120 DS30120 Rev. 13 PDF

    JESD22-A108C

    Abstract: JESD22-A108-C JESD22A-101-B
    Text: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B JESD22-A108C JESD22-A108-C JESD22A-101-B PDF

    JESD22-A108C

    Abstract: 2N7002K
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min JESD22-A108C 2N7002K PDF

    k72 diode

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description


    Original     		2N7002DW DS30120 k72 diode PDF

    2N7002-13-F

    Abstract: 2N7002Q-7-F mosfet 2n7002 2N7002-7-F
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		2N7002 210mA AEC-Q101 DS11303 2N7002-13-F 2N7002Q-7-F mosfet 2n7002 2N7002-7-F PDF

    diode K72

    Abstract: K72 marking diode k72 diode
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance


    Original     		2N7002DW AEC-Q101 DS30120 diode K72 K72 marking diode k72 diode PDF

    k72 diode

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		2N7002 210mA AEC-Q101 DS11303 k72 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2


    Original     		2N7002K METHOD-1027 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038 PDF

    k72 diode

    Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		2N7002DW AEC-Q101 DS30120 k72 diode mosfet k72 K72 marking diode DS30120 Rev. 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		2N7002DW AEC-Q101 DS30120 PDF

    2N7002 marking code 72

    Abstract: 2n7002-7-f c72 c72 sot23 2N7002 marking code 72 APPLICATION NOTES MARKING CODE C72 K72 marking diode MARKING C72 2N7002-7-F k72 diode
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		2N7002 210mA AEC-Q101 DS11303 2N7002 marking code 72 2n7002-7-f c72 c72 sot23 2N7002 marking code 72 APPLICATION NOTES MARKING CODE C72 K72 marking diode MARKING C72 2N7002-7-F k72 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		2N7002 210mA AEC-Q101 DS11303 PDF

    mosfet k72

    Abstract: k72 diode K72 marking diode k72 mosfet I-S115 marking K72
    Text: 2N7002W Mosfet N-Channel SOT-323 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: K72 Dimensions in inches and (millimeters)


    Original     		2N7002W OT-323 500mA mosfet k72 k72 diode K72 marking diode k72 mosfet I-S115 marking K72 PDF

    k72 diode

    Abstract: STK7002U stk7002 code k72
    Text: STK7002U Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS ON . • Voltage controlled small signal switch • High saturation current capability. Ordering Information


    Original     		STK7002U STK7002U OT-323 KSD-T5D016-000 KSD-T5D016-000 k72 diode stk7002 code k72 PDF

    k72 diode

    Abstract: code k72 mosfet k72 STK7002U
    Text: STK7002U N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features  High density cell design for low RDS ON .  Voltage controlled small signal switch  High saturation current capability. Ordering Information Type NO.


    Original     		STK7002U OT-323 KSD-T5D016-001 k72 diode code k72 mosfet k72 STK7002U PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-363 H A h


    OCR Scan     		2N7002DW OT-363 OT-363, MIL-STD-202, DS30120 PDF

    k72 transistor

    Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


    Original     		OT-363 2N7002DW width300 k72 transistor transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td PDF

    transistor k72

    Abstract: No abstract text available
    Text: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002DW OT-363 OT-363, MIL-STD-202, 500mA DS30120 transistor k72 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-323 2N7002W OT-323 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-323 2N7002W OT-323 500mA 200mA 115mA, 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-523 2N7002T OT-523 500mA 200mA 115mA, 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-323 2N7002W OT-323 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-323 2N7002W OT-323 500mA PDF

    2P1 transistor

    Abstract: No abstract text available
    Text: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002DW OT-363 OT-363, MIL-STD-202, 500mA DS30120 2P1 transistor PDF