MOSFET KF10N60 Search Results

MOSFET KF10N60 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TCK424G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

MOSFET KF10N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KF10N60 Abstract: No abstract text available Text: SEMICONDUCTOR KF10N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor	Original	KF10N60P/F KF10N60	PDF
kf10n60 Abstract: mosfet KF10N60 Text: SEMICONDUCTOR KF10N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor	Original	KF10N60P/F KF10N60P Fig15. Fig16. KF10N60PR/FR Fig17. kf10n60 mosfet KF10N60	PDF
kf10n60 Abstract: transistor kf10n60 813F2 mosfet KF10N60 TO-220IS kf10n60p Text: SEMICONDUCTOR KF10N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor	Original	KF10N60P/F KF10N60P Fig15. Fig16. Fig17. kf10n60 transistor kf10n60 813F2 mosfet KF10N60 TO-220IS kf10n60p	PDF
kf10n60 Abstract: transistor kf10n60 KF10N60FR mosfet KF10N60 FR 152 diode Text: SEMICONDUCTOR KF10N60PR/FR TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N60PR This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, fast reverse recovery time, low gate charge and excellent avalanche characteristics. It is mainly suitable for	Original	150nS KF10N60PR/FR KF10N60PR Fig15. Fig16. Fig17. kf10n60 transistor kf10n60 KF10N60FR mosfet KF10N60 FR 152 diode	PDF
MOSFET Abstract: Planar Text: SEMICONDUCTOR KF10N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor	Original	KF10N60P/F KF10N60P Fig15. Fig16. Fig17. MOSFET Planar	PDF
KF6N60 Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION	Original	USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05	PDF