9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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QS6U24
Abstract: TSMT6 QS6M4
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 2.9 (6) (4) (3) (5) (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) The QS6U24 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET
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QS6U24
TSMT6
QS6M4
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at 8515
Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8 mosfet 23 Tsop-6 150C1
Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead
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AAT8515
AAT8515
SC70JW-8
at 8515
AAT8515IJS-T1
mosfet 23 Tsop-6
150C1
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AAT8543
Abstract: AAT8543IJS-T1 SC70JW-8
Text: AAT8543 20V P-Channel Power MOSFET General Description Features The AAT8543 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead
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AAT8543
AAT8543
SC70JW-8
AAT8543IJS-T1
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QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
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AAT8512
Abstract: AAT8512IJS-T1 SC70JW-8
Text: AAT8512 28V P-Channel Power MOSFET General Description Features The AAT8512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally
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AAT8512
AAT8512
AAT8512IJS-T1
SC70JW-8
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NX3008NBKMB
Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
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OT223
DFN1006B-3,
AEC-Q101
Q3/2012
NX3008NBKMB
BSS138BK
BSS84AKS
PMV48XP
BSH201
2N7002PW
nx2301
PMPB27XP
PMF170XP
2N7002PS
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AAT8515IJS
Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8
Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally
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AAT8515
AAT8515
SC70JW-8
AAT8515IJS-T1
048REF
AAT8515IJS
AAT8515IJS-T1
SC70JW-8
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Untitled
Abstract: No abstract text available
Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode
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15Max.
85Max.
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Untitled
Abstract: No abstract text available
Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.
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15Max.
85Max.
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AAT7551
Abstract: AAT7551IJS-T1 SC70JW-8
Text: AAT7551 20V P-Channel Power MOSFET General Description Features The AAT7551 is a dual low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally
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AAT7551
AAT7551
AAT7551IJS-T1
SC70JW-8
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SP8M21
Abstract: No abstract text available
Text: SP8M21 Transistors 4V Drive Nch+Pch MOSFET SP8M21 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode.
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SP8M21
SP8M21
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US5U2
Abstract: No abstract text available
Text: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 0.85Max. 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode
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85Max.
15Max.
US5U2
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AAT9501
Abstract: AAT9501IJS-T1 SC70JW-8
Text: AAT9501 25V N-Channel Power MOSFET General Description Features The AAT9501 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's utra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally
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AAT9501
AAT9501
AAT9501IJS-T1
SC70JW-8
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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TSMT6
Abstract: voltage source inverter z source inverter QS6M4
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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AAT9501
Abstract: AAT9501IJS-T1 SC70JW-8
Text: AAT9501 25V N-Channel Power MOSFET General Description Features The AAT9501 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's utra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a
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AAT9501
AAT9501
SC70JW-8
AAT9501IJS-T1
048REF
AAT9501IJS-T1
SC70JW-8
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AAT9512
Abstract: AAT9512IJS-T1 SC70JW-8
Text: AAT9512 28V N-Channel Power MOSFET General Description Features The AAT9512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in
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AAT9512
AAT9512
AAT9512IJS-T1
SC70JW-8
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Untitled
Abstract: No abstract text available
Text: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input
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LM2725
LM2726
LM2725/LM2726
SNVS144B
LM272/clocks
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Power MOSFET, toshiba
Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series
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VDSS100V)
DP0530019
O-220SIS
Power MOSFET, toshiba
4502 mosfet
2sk3561
HIGH POWER MOSFET TOSHIBA
2SK3568
2sk3562
2SK2842
2SK3742
2SK3567 equivalent
2SK3567
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2N7225U
Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91549B
IRFN250
JANTX2N7225U
JANTXV2N7225U
MIL-PRF-19500/592]
2N7225U
SMD1P
IRFN250
JANTX2N7225U
JANTXV2N7225U
mosfet ir 250 n
2n7225
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2n7224U
Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91547B
IRFN150
JANTX2N7224U
JANTXV2N7224U
MIL-PRF-19500/592]
100Volt,
2n7224U
IRFN150
JANTX2N7224U
JANTXV2N7224U
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Untitled
Abstract: No abstract text available
Text: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDH210N08
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