Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET MARK Y2 Search Results

    MOSFET MARK Y2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARK Y2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


    Original     		PDF MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749

    Untitled

    Abstract: No abstract text available
    Text: 19-4248; Rev 0; 8/08 MAX5961 Evaluation Kit The MAX5961 evaluation kit EV kit circuit demonstrates the MAX5961 quad-channel hot-swap controller that provides voltage and current monitoring. The EV kit circuitry features several jumpers to configure the MAX5961 initial settings. The input voltage range, output voltage limit(s), output current limit(s), and faultmanagement features are all software programmable.


    Original     		PDF MAX5961 2000/XP/Vista 32-bit MAX5961

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E

    MOSFET MARK y2

    Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1

    MOSFET MARK y2

    Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC H01N60I, H01N60J MOSFET MARK y2 H01N60I MOSFET MARK H1 H01N60J TL 434 mosfet sn60

    MOSFET MARK y2

    Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40

    MOSFET MARK y2

    Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI

    SSM2301

    Abstract: No abstract text available
    Text: PROCESS CHANGE NOTIFICATION PCN Number: 040101 Notice Type: Minor Customer Name: General - to all customers Customer Number: Customer Contact: Marketing Part Number: SSM2301 G N through SSM2306(G)N, SS431(G)N, SS432(G0N Notification dated: April 1, 2004 Change Effective date: Implemented January 1, 2004


    Original     		PDF SSM2301 SSM2306 SS431 SS432 OT-23 OT-23-3 OT-23-6 -SOP-OP-015

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
    Text: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A


    Original     		PDF MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
    Text: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A


    Original     		PDF MOS200702 H3055MJ H3055MJ O-252 V-10V) 10sec mosfet y1 MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055

    poe splitter circuit

    Abstract: MAGJACK application pcb MAX5971A MAX5971 RJ45 lan female jack atmel 748 08261X1TGH-F 0826-1X1T
    Text: 19-5783; Rev 0; 3/11 MAX5971B Evaluation Kit Evaluates: MAX5971B General Description The MAX5971B evaluation kit EV kit is a fully assembled and tested surface-mount PCB featuring an Ethernet single-port power-sourcing equipment (PSE) circuit for -54V supply rail systems. The IEEEM 802.3af/at-compliant


    Original     		PDF MAX5971B MAX5971B 28-pin poe splitter circuit MAGJACK application pcb MAX5971A MAX5971 RJ45 lan female jack atmel 748 08261X1TGH-F 0826-1X1T

    ei-33 transformer

    Abstract: 7nb60 transformer ei-33 X2 0.1uF 275V thermistor sck053 "transformer" ei-33 sck053 SG6846ALSZ sck-053 7NB6
    Text: SG6846A Highly Integrated Green-Mode PWM Controller Features Description ƒ ƒ ƒ Low Startup Current: 8µA ƒ PWM Frequency Continuously Decreasing with Burst Mode at Light Loads The SG6846A is especially designed for SMPS with surge-current output, incorporated with a two-level OCP


    Original     		PDF SG6846A SG6846A 1700ms, ei-33 transformer 7nb60 transformer ei-33 X2 0.1uF 275V thermistor sck053 "transformer" ei-33 sck053 SG6846ALSZ sck-053 7NB6

    ei-33 transformer

    Abstract: EI33 SWITCHING TRANSFORMER L3 MARKING CODE 8PIN
    Text: SG6846A Highly Integrated Green-Mode PWM Controller Features Description ƒ ƒ ƒ Low Startup Current: 8µA ƒ PWM Frequency Continuously Decreasing with Burst Mode at Light Loads The SG6846A is especially designed for SMPS with surge-current output, incorporated with a two-level OCP


    Original     		PDF SG6846A 1600ms 100ms 1700ms SG6846A ei-33 transformer EI33 SWITCHING TRANSFORMER L3 MARKING CODE 8PIN

    AP3409

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated AP3409/A 3A, 4MHz HIGH EFFICIENCY SYNCHRONOUS BUCK CONVERTER Description Pin Assignments Top View The AP3409/A is a current mode, PWM synchronous buck DC/DC converter, capable of driving a 3A load with high efficiency, excellent


    Original     		PDF AP3409/A AP3409/A DS36789 AP3409

    IN4148WT

    Abstract: max17435etg MAX17435 max17435e MAX17435et fds8884 MARK BE diode SOD523 GRM188R71C104K LRC-LRF-2512LF-01-R010-F max17435evkit
    Text: 19-5201; Rev 0; 3/10 MAX17435 Evaluation Kit Features The MAX17435 evaluation kit EV kit is an assembled and tested PCB that evaluates the MAX17435 IC. The MAX17435 is a multichemistry battery charger controller with SMBusK programmable charge current, charge voltage, input-current limit, relearn


    Original     		PDF MAX17435 MAX17435 IN4148WT max17435etg max17435e MAX17435et fds8884 MARK BE diode SOD523 GRM188R71C104K LRC-LRF-2512LF-01-R010-F max17435evkit

    fds4435bz

    Abstract: *6690AS fds8884 LRC-LRF2512-LF-01-R010-F Diode SOD523 LRC-LRF-2512LF-01-R010-F MARK BE diode SOD523 GRM188R71C104K GRM188R71C183K LRC-LRF-2010LF-01-R010-F
    Text: 19-5344; Rev 0; 7/10 MAX17535 Evaluation Kit Features The MAX17535 evaluation kit EV kit is an assembled and tested PCB that evaluates the MAX17535 IC. The IC is a multichemistry battery charger controller with SMBusK-programmable charge current, charge voltage, input-current limit, relearn


    Original     		PDF MAX17535 MAX17535 fds4435bz *6690AS fds8884 LRC-LRF2512-LF-01-R010-F Diode SOD523 LRC-LRF-2512LF-01-R010-F MARK BE diode SOD523 GRM188R71C104K GRM188R71C183K LRC-LRF-2010LF-01-R010-F

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated AP3595 DUAL PHASE SYNCHRONOUS RECTIFIED BUCK CONTROLLER Description Pin Assignments The AP3595 is a compact dual phase synchronous rectified buck controller specifically designed to deliver high quality output voltage.


    Original     		PDF AP3595 AP3595 DS36749

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated AP3591 SINGLE PHASE SYNCHRONOUS BUCK CONTROLLER Description Pin Assignments Top View TON 1 14 2 13 UGATE VOUT 3 4 FB 5 PGOOD EP 12 PHASE 11 CS 10 VDDP 6 9 LGATE 7 8 PGND The operation mode is selectable by EN voltage. A Diode Emulation


    Original     		PDF AP3591 DS36906

    H35N03J

    Abstract: MOSFET N 30V 30A 252 mosfet sn60
    Text: HI-SINCERITY Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H35N03J H35N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 35A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate


    Original     		PDF MOS200515 H35N03J H35N03J O-252 ot50oC 200oC 183oC 217oC 260oC 245oC MOSFET N 30V 30A 252 mosfet sn60

    SPM0423HE4H

    Abstract: BLM18PG221SN1 Audio Power Amplifier MOSFET TOSHIBA AKU2002C
    Text: 19-5487; Rev 1; 5/11 MAX98088 Evaluation Kit Features The MAX98088 evaluation kit EV kit is a fully assembled and tested circuit board that evaluates the MAX98088 audio codec. The MAX98088 IC is an integrated audio codec including microphone amplifiers, line amplifiers,


    Original     		PDF MAX98088 MAX98088 SPM0423HE4H BLM18PG221SN1 Audio Power Amplifier MOSFET TOSHIBA AKU2002C