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    MOSFET MARKING CODE A24X Search Results

    MOSFET MARKING CODE A24X Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING CODE A24X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MARKING TR SOT23-3 P MOSFET

    Abstract: APM2324AA mosfet marking code a24x APM2324A STD-020C
    Text: APM2324AA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/3A, RDS ON = 50mΩ(typ.) @ VGS= 4.5V RDS(ON)= 65mΩ(typ.) @ VGS= 2.5V RDS(ON)= 120mΩ(typ.) @ VGS= 1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged


    Original     		APM2324AA OT-23 APM2324A APM2324A MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 MARKING TR SOT23-3 P MOSFET APM2324AA mosfet marking code a24x STD-020C PDF

    A102

    Abstract: APM2324A APM2324AA
    Text: APM2324AA N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/3A, D RDS ON = 50mΩ(Typ.) @ VGS= 4.5V RDS(ON)= 65mΩ(Typ.) @ VGS= 2.5V G S RDS(ON)= 120mΩ(Typ.) @ VGS= 1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged


    Original     		APM2324AA OT-23 APM2324A A102 APM2324A APM2324AA PDF

    APM2324AA

    Abstract: APM2324A
    Text: APM2324AA N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/3A, D RDS ON = 50mΩ(Typ.) @ VGS= 4.5V RDS(ON)= 65mΩ(Typ.) @ VGS= 2.5V G S RDS(ON)= 120mΩ(Typ.) @ VGS= 1.8V • • • Super High Dense Cell Design Lead Free and Green Devices Available


    Original     		APM2324AA OT-23 APM2324A OT-23 APM2324AA APM2324A PDF