SI5855DC-T1-E3
Abstract: Si5853DC Si5855DC Si5855DC-T1-GE3 7223-2
Text: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)
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Si5855DC
Si5853DC
2002/95/EC
18-Jul-08
SI5855DC-T1-E3
Si5855DC-T1-GE3
7223-2
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Untitled
Abstract: No abstract text available
Text: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5858DU
12-Sep-05
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marking code jb
Abstract: mosfet marking jb 5193-1
Text: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5858DU
Si5858DU-T1
51931--Rev.
12-Sep-05
marking code jb
mosfet marking jb
5193-1
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Untitled
Abstract: No abstract text available
Text: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)
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Si5855DC
Si5853DC
2002/95/EC
Si5855DCtrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si5858DU-T1-GE3
Abstract: si5858
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
18-Jul-08
Si5858DU-T1-GE3
si5858
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Untitled
Abstract: No abstract text available
Text: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5858DU
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)
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Si5855DC
Si5853DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Marking Code JB
Abstract: Si5858DU-T1-GE3 C1B7
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free • LITTLE FOOT Plus Power MOSFET
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Si5858DU
18-Jul-08
Marking Code JB
Si5858DU-T1-GE3
C1B7
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Untitled
Abstract: No abstract text available
Text: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)
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Si5855DC
Si5853DC
2002/95/EC
Si5855DChay
11-Mar-11
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IDTP9090
Abstract: No abstract text available
Text: High and Low Side N-Channel Gate Driver Product Datasheet IDTP9090 Features Description • Input Voltage Range: 4.5 to 5.5 • Output Voltage Range: Control Range 0-30V Peak MOSFET Drive current into 3nF • LGDRV Sink 3A LGDRV Source 1A UGDRV Sink
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IDTP9090
IDTP9090
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Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Mosfet MARKING A1
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
11-Mar-11
Mosfet MARKING A1
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mosfet marking jb
Abstract: Marking Code JB
Text: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky
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Si5855DC
Si5853DC
Si5855DC-T1
Si5855DC-T1--E3
S-40932--Rev.
17-May-04
mosfet marking jb
Marking Code JB
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marking code jb
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code jb
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Untitled
Abstract: No abstract text available
Text: Si5855DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = - 4.5 V - 3.6 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible - 20 0.160 @ VGS = - 2.5 V
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Si5855DC
Si5853DC
Si5855DC-T1
S-31406--Rev.
07-Jul-03
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Untitled
Abstract: No abstract text available
Text: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the
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FDZ7064S
FDZ7064S
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marking JB SCHOTTKY BARRIER DIODE
Abstract: FDZ7064N FDZ7064S mosfet marking jb
Text: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the
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FDZ7064S
FDZ7064S
marking JB SCHOTTKY BARRIER DIODE
FDZ7064N
mosfet marking jb
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Marking Code JB
Abstract: SI5855DC-T1 SI5855DC-T1-E3 Si5855DC Si5853DC
Text: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky
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Si5855DC
Si5853DC
Si5855DC-T1
Si5855DC-T1--E3
08-Apr-05
Marking Code JB
SI5855DC-T1-E3
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Marking Code JB
Abstract: SI5855DC-T1-E3 Si5853DC Si5855DC Si5855DC-T1 7223-2
Text: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky
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Si5855DC
Si5853DC
Si5855DC-T1
Si5855DC-T1--E3
18-Jul-08
Marking Code JB
SI5855DC-T1-E3
7223-2
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Untitled
Abstract: No abstract text available
Text: UCC27322-EP www.ti.com SLUSAA1C – SEPTEMBER 2010 – REVISED MARCH 2013 SINGLE 9-A HIGH-SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE Check for Samples: UCC27322-EP FEATURES 1 • 2 • • • • • • • Industry-Standard Pinout With Addition of Enable Function
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UCC27322-EP
20-ns
15-ns
10-nF
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Untitled
Abstract: No abstract text available
Text: IRSM807-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM807-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in
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IRSM807-105MH
IRSM807-105MH
DT04-4
AN-1044.
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Untitled
Abstract: No abstract text available
Text: IRSM808-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM808-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in
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IRSM808-105MH
IRSM808-105MH
DT04-4
AN-1044.
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