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    MOSFET MARKING PQ Search Results

    MOSFET MARKING PQ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING PQ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70325 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 250 V RDS(on) = 1.4 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70325 E209204 UL1557) AN-9077 AN-9078 FSB70325 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70325 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 250 V RDS(on) = 1.4 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70325 E209204 UL1557) AN-9077 AN-9078 FSB70325 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70625 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 250 V RDS(on) = 0.8 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70625 E209204 UL1557) AN-9077 AN-9078 FSB70625 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70250 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 500 V RDS(on) = 3.4 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70250 E209204 UL1557) AN-9077 AN-9078 FSB70250 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70625 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 250 V RDS(on) = 0.8 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70625 E209204 UL1557) AN-9077 AN-9078 FSB70625 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70250 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 500 V RDS(on) = 3.4 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70250 E209204 UL1557) AN-9077 AN-9078 FSB70250 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70550 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 500 V RDS(on) = 1.85 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70550 E209204 UL1557) AN-9077 AN-9078 FSB70550 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70550 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 500 V RDS(on) = 1.85 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70550 E209204 UL1557) AN-9077 AN-9078 FSB70550 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB70450 Motion SPM 7 Series Features Application • UL Certified No. E209204 UL1557 • 3-Phase Inverter Driver for Small Power AC Motor Drives • High Performance PQFN Package • 500 V RDS(on) = 2.2 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection


    Original     		FSB70450 E209204 UL1557) AN-9077 AN-9078 FSB70450 com/dwg//PQ/PQFN27A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86101DC N-Channel Dual CoolTM Power Trench MOSFET 100 V, 60 A, 7.5 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86101DC FDMS86101DC PDF

    V753

    Abstract: FDMS86200DC
    Text: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86200DC FDMS86200DC V753 PDF

    FDMS86101

    Abstract: FDMS
    Text: FDMS86101DC N-Channel Dual CoolTM Power Trench MOSFET 100 V, 60 A, 7.5 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86101DC FDMS86101 FDMS PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86101DC N-Channel Dual CoolTM Power Trench MOSFET 100 V, 60 A, 7.5 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86101DC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86500DC FDMS86500DC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86300DC PDF

    FDMS86300DC

    Abstract: No abstract text available
    Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86300DC FDMS86300DC PDF

    MARKING 3020

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		FDMC3020DC FDMC3020DC MARKING 3020 PDF

    FDMS86300

    Abstract: No abstract text available
    Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 60 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86300DC FDMS86300DC FDMS86300 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86500DC PDF

    fdms86500

    Abstract: FDMS86500dc
    Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 60 A, 2.3 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86500DC FDMS86500DC fdms86500 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86520DC N-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 mΩ Features „ Dual Cool TM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMC86520DC FDMC86520DC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS86500DC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		FDMS3016DC PDF

    IRFH5301

    Abstract: AN-1154 IRFH5301TR2PBF IRFH5301TRPBF
    Text: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters


    Original     		IRFH5301PbF IRFH530ard 119mH, IRFH5301 AN-1154 IRFH5301TR2PBF IRFH5301TRPBF PDF