p421 coupler
Abstract: p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic
Text: 4. Supplementary Information 4–1 Current Transfer Ratio CTR , LED Trigger Current (IFT) Ranking and Marking Unit: mm Standard rank classifications are applied for the CTR of transistor-type photocouplers and for the IFT of MOSFET, SCR, Triac-type photocouplers. Indicative product markings corresponding to rank names are as shown below.
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TLP180
TLP181
TLP280
TLP280-4
TLP281
TLP281-4
TLP321
TLP321-2/-3/-4
IEC435/
IEC65/
p421 coupler
p421 Photocoupler
P521 Photocoupler
Toshiba P521 Photocoupler
P521 G
p521 gb
p521 gr
gr p421
toshiba tlp 759 datasheet
TLP521 4pin ic
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TRANSISTOR SMD MARKING CODE
Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
Text: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose
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100mA
200mA
OD-323
CMDSH05-4
500mA
OT-23
TRANSISTOR SMD MARKING CODE
4E smd diode
smd code marking sot23
smd diode marking code
transistor marking code SOT-23
marking code s1 SMD diode
MOSFET marking smd
on semiconductor marking code sot
MOSFET SMD MARKING CODE
TRANSISTOR SMD npn MARKING CODE
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A07 smd transistor
Abstract: SmD TRANSISTOR a45 TRANSISTOR SMD MARKING CODE A45 placeholder for manufacturing site code
Text: Product specification NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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NX2301P
O-236AB)
AEC-Q101
A07 smd transistor
SmD TRANSISTOR a45
TRANSISTOR SMD MARKING CODE A45
placeholder for manufacturing site code
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: No abstract text available
Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV160UP
O-236AB)
MOSFET TRANSISTOR SMD MARKING CODE nh
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: 83B PMZB670UPE SO T8 20 V, single P-channel Trench MOSFET Rev. 1 — 31 January 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMZB670UPE
OT883B
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV16UN
O-236AB)
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NXP SMD mosfet MARKING CODE
Abstract: No abstract text available
Text: 83B PMZB670UPE SO T8 20 V, single P-channel Trench MOSFET Rev. 3 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB670UPE
DFN1006B-3
OT883B)
NXP SMD mosfet MARKING CODE
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NXP SMD mosfet MARKING CODE
Abstract: No abstract text available
Text: 83B PMZB290UNE SO T8 20 V, single N-channel Trench MOSFET Rev. 2 — 7 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMZB290UNE
OT883B
AEC-Q101
NXP SMD mosfet MARKING CODE
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Untitled
Abstract: No abstract text available
Text: 83B PMZB670UPE SO T8 20 V, single P-channel Trench MOSFET Rev. 2 — 7 February 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMZB670UPE
OT883B
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV185XN
O-236AB)
gate-sou15
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Untitled
Abstract: No abstract text available
Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV28UN
O-236AB)
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: No abstract text available
Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV20XN
O-236AB)
TRANSISTOR SMD MARKING CODE 1 KW
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Untitled
Abstract: No abstract text available
Text: 83B PMZB290UNE SO T8 20 V, single N-channel Trench MOSFET Rev. 3 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB290UNE
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV32UP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV48XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV170UN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65UN
O-236AB)
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE QR DFN2020MD-6 sot1220 PMPB15XN
Text: PMPB15XN 20 V, single N-channel Trench MOSFET 13 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB15XN
DFN2020MD-6
OT1220)
MOSFET TRANSISTOR SMD MARKING CODE 11
MOSFET TRANSISTOR SMD MARKING CODE NA
NXP SMD mosfet MARKING CODE
MOSFET TRANSISTOR SMD MARKING CODE 7
MOSFET TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE QR
DFN2020MD-6
sot1220
PMPB15XN
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
Text: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB20UN
DFN2020MD-6
OT1220)
MOSFET TRANSISTOR SMD MARKING CODE A1
MOSFET TRANSISTOR SMD MARKING CODE 11
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transistor smd code marking 420
Abstract: No abstract text available
Text: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV30XN
O-236AB)
transistor smd code marking 420
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Untitled
Abstract: No abstract text available
Text: Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV50UPE
O-236AB)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB360ENEA
DFN1010D-3
OT1215)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB56EN
DFN1010D-3
OT1215)
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