APM3023NU
Abstract: APM3023N STD-020C A102 diode
Text: APM3023NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ (typ.) @ VGS=10V RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM3023NU
0V/30A,
O-252
APM3023N
APM3023N
APM3023NU
STD-020C
A102 diode
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APM3024N
Abstract: APM3024NU STD-020C
Text: APM3024NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ (typ.) @ VGS=10V G RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM3024NU
0V/30A,
O-252
APM3024N
APM3024N
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
APM3024NU
STD-020C
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3023n
Abstract: APM3023N A102 J-STD-020A M3023 TO-252-E
Text: APM3023N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages
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APM3023N
0V/30A,
O-252
O-220
OT-223
OT-223
O-252
3023n
APM3023N
A102
J-STD-020A
M3023
TO-252-E
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diode ja
Abstract: No abstract text available
Text: SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 30A TO-252 RDS(ON) (mΩ) Max D 17 @VGS = 10V G 35 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable. G ◆ TO-252 package. ◆ Pb Free.
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SSD3030N
O-252
O-252
25mum
diode ja
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SSD95N03
Abstract: MosFET 95N03
Text: SSD95N03 96A , 30V , RDS ON 4mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSD95N03
O-252
SSD95N03
O-252
24-Nov-2011
MosFET
95N03
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Mosfet
Abstract: SSFM2508
Text: SSFM2508 25V N-Channel MOSFET Main Product Characteristics: 25V VDSS SSFM2508 RDS on 8mohm ID 55A TO-252 DPAK Marking and pin assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications
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SSFM2508
O-252
Mosfet
SSFM2508
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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Untitled
Abstract: No abstract text available
Text: KSMD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω Features TO-252AA • Fast switching • r DS ON = 0.014Ω (Typ), V GS = 10V • r DS(ON) = 0.024Ω (Typ), V GS = 4.5V • Qg (Typ) = 9.6nC, V GS = 5V • Qgd (Typ) = 3.4nC • C ISS (Typ) = 900pF
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KSMD60N03L
O-252AA
900pF
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APM3109
Abstract: APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D
Text: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged D Avalanche Rated
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APM3109NU
0V/50A,
O-252-3
APM3109N
APM31093
JESD-22,
APM3109
APM3109NU
MOSFET N 30V 30A 252
A102
A104
A108
B102
JESD-22
J-STD-020D
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IRFZ34V
Abstract: No abstract text available
Text: PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D
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IRFIZ34VPbF
O-220
IRFZ34V
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IRFZ34V
Abstract: No abstract text available
Text: PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D
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IRFIZ34VPbF
O-220
IRFZ34V
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Untitled
Abstract: No abstract text available
Text: PD - 95127 IRL3713PbF IRL3713S IRL3713L SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l TO-220 is available in PbF as Lead-Free
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IRL3713PbF
IRL3713S
IRL3713L
O-220
O-220AB
O-262
AN-994.
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APM3112N
Abstract: apm31
Text: APM3112NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =9.5mΩ (typ.) @ VGS=10V G RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available
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APM3112NU
0V/50A,
O-252-3
APM3112N
O-252-3
JESD-22,
apm31
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APM3109
Abstract: apm31
Text: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Avalanche Rated D
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APM3109NU
0V/50A,
O-252
APM3109N
O-252
APM3109
apm31
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MJ16015
Abstract: IRFIZ34V IRFZ34V 12V 30A diode
Text: PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ
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IRFIZ34V
O-220
MJ16015
IRFIZ34V
IRFZ34V
12V 30A diode
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Untitled
Abstract: No abstract text available
Text: FôteEiTUâUË U JI 2SK2050 N-channel MOS-FET F -lll S e r ie s 100 V 80W > Outline Drawing > Features - 0,055Q 30A High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier
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OCR Scan
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2SK2050
gs-20K
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PDF
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IRFZ34V
Abstract: smps 2000 watts circuit
Text: PD - 94042 IRFZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ
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IRFZ34V
O-220
pref52-7105
IRFZ34V
smps 2000 watts circuit
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PDF
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AN-994
Abstract: IRFZ34V IRFZ34VL IRFZ34VS 94180
Text: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V
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IRFZ34VS
IRFZ34VL
AN-994
IRFZ34V
IRFZ34VL
IRFZ34VS
94180
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94103
Abstract: IRFU3709 24V 30A SMPS
Text: PD - 94103 IRFU3709 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l l VDSS RDS on max
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IRFU3709
94103
IRFU3709
24V 30A SMPS
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AN-994
Abstract: IRFZ34V IRFZ34VL IRFZ34VS
Text: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V
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IRFZ34VS
IRFZ34VL
AN-994
IRFZ34V
IRFZ34VL
IRFZ34VS
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A102
Abstract: APM3009N APM3009NU rg6 to vga TO-252 N-channel MOSFET 30V50A
Text: APM3009NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=11mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available
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APM3009NU
0V/50A,
O-252
APM3009N
APM3009N
APM300
A102
APM3009NU
rg6 to vga
TO-252 N-channel MOSFET
30V50A
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RSN 3305
Abstract: schematic diagram converter 12v to 24v 30a 10uf Capacitor ESR 2mohm Panasonic dv 700 manual compensator for cuk converter SP6133 68uF 10V SANYO SP6133EB schematic diagram PWM 12V 30a QFN 8 CARSEM
Text: SP6133 Solved by TM 2 GND 3 VFB 4 UV IN V IN BST 13 12 GH SP6133 16 Pin QFN 3mm x 3mm 5 6 7 11 SWN 10 ISP 9 ISN 8 SS PGND 14 PWRGD 1 15 EN GL 16 COMP FEATURES • 5V to 24V Input step down converter ■ Up to 30A output capability ■ Highly integrated design, minimal components
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SP6133
16-Pin
SP6133
MIL-STD-883E
100pF
EIAJ-ED-17.
100mA
RSN 3305
schematic diagram converter 12v to 24v 30a
10uf Capacitor ESR 2mohm
Panasonic dv 700 manual
compensator for cuk converter
68uF 10V SANYO
SP6133EB
schematic diagram PWM 12V 30a
QFN 8 CARSEM
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APM3009N
Abstract: APM3009NU STD-020C rg6 to vga mosfet Marking Code b3
Text: APM3009NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V RDS(ON)=11mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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Original
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APM3009NU
0V/50A,
O-252
APM3009N
APM3009N
MIL-STD-883D-2003
883D-1005
JESD-22-B,
APM3009NU
STD-020C
rg6 to vga
mosfet Marking Code b3
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PDF
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IRL3713S
Abstract: IRL3713L AN-994 IRL3713 mosfet k 61 y1
Text: PD - 94184 PROVISIONAL IRL3713 IRL3713S IRL3713L SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power
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IRL3713
IRL3713S
IRL3713L
O-220AB
O-262
O-220AB
AN-994.
IRL3713S
IRL3713L
AN-994
IRL3713
mosfet k 61 y1
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