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    MOSFET N SOT323 Search Results

    MOSFET N SOT323 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET N SOT323 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK3018

    Abstract: 3018G 2SK3018 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		UK3018 2SK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G 2SK3018 UTC PDF

    NX3020NAK

    Abstract: No abstract text available
    Text: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		NX3020NAKW OT323 SC-70) NX3020NAK PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		NX3020NAKW OT323 SC-70) PDF

    placeholder for manufacturing site code

    Abstract: No abstract text available
    Text: PMF87EN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMF87EN OT323 SC-70) placeholder for manufacturing site code PDF

    3018G

    Abstract: UK3018G Device Marking 313
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low


    Original     		UK3018 UK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G UK3018G Device Marking 313 PDF

    2.5V "Power MOSFET"

    Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		UK3018 OT-23 2SK3018 OT-323 400mA UK3018L UK3018G UK3018-AE3-R UK3018-ALt QW-R502-313 2.5V "Power MOSFET" MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 SOT-23 PDF

    2N7002PW

    Abstract: No abstract text available
    Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		2N7002PW OT323 SC-70) AEC-Q101 50itions 771-2N7002PW-115 2N7002PW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		2N7002BKW OT323 SC-70) AEC-Q101 PDF

    MARKING SMD x9

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		2N7002BKW OT323 SC-70) AEC-Q101 MARKING SMD x9 MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 PMF250XN 30 V, 0.9 A N-channel Trench MOSFET Rev. 1 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMF250XN OT323 SC-70) PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 PMF77XN 30 V, single N-channel Trench MOSFET Rev. 1 — 27 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMF77XN OT323 SC-70) PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		BSS138BKW OT323 SC-70) AEC-Q101 PDF

    PMF63UN

    Abstract: No abstract text available
    Text: SO T3 23 PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMF63UN OT323 SC-70) PMF63UN PDF

    S6680A

    Abstract: FDS6680A
    Text: January 1998 FAIRCHILD SEM ICONDUCTO R PRELIMINARY tm FDS6680A Single N-Channel, Logic Level, PowerTrench, MOSFET General Description Features These N-Channel Logic Level MOSFET are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to


    OCR Scan     		FDS6680A S6680A PDF

    Marking Code S72

    Abstract: No abstract text available
    Text: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3


    Original     		2N7002W OT-323 SC-70) OT-323 2N7002W T/R13 Marking Code S72 PDF

    MTN7002ZHS3

    Abstract: T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23
    Text: CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


    Original     		C320S3 MTN7002ZHS3 MTN7002ZHS3 OT-323 T1091 HS0711060098A RAC9603789-E T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2008.01.25 Page No. : 1/7 N-CHANNEL MOSFET MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


    Original     		C320S3-R MTN3018S3 MTN3018S3 OT-323 PDF

    Untitled

    Abstract: No abstract text available
    Text: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit


    Original     		UM2302 UM2302S OT23-3 UM2302P OT323 UM2302 OT23-3 OT323 115mA PDF

    SOT-323

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2


    Original     		2N7002KW 120sec 260sec 30sec DS-251127 SOT-323 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UK3018 Preliminary Power MOSFET 2 .5 V DRI V E SI LI CON N -CH AN N EL M OSFET ̈ DESCRI PT I ON The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low


    Original     		UK3018 UK3018 400mA UK3018G-AE2-R UK3018G-AL3-R QW-R502-313 PDF

    MOSFET dynamic parameters

    Abstract: 3LN01M 3LN01ML-AL3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 3LN01M Preliminary Power MOSFET N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS „ DESCRIPTION The 3LN01M uses UTC advanced technology to provide excellent RDS ON , low gate charge and operation with low gate


    Original     		3LN01M 3LN01M 3LN01ML 3LN01MG 3LN01M-AL3-R QW-R502-285 MOSFET dynamic parameters 3LN01ML-AL3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZW Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during


    Original     		2N7002ZW 2N7002ZW 2N7002ZWL-AL3-R 2N7002ZWG-AL3-R OT-323 QW-R502-539 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET RSU002N06 Structure Silicon N-channel MOSFET Dimensions Unit : mm  UMT3 (SC-70) <SOT-323> Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RK


    Original     		RSU002N06 SC-70) OT-323> R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET RSU002N06 Dimensions Unit : mm  Structure Silicon N-channel MOSFET UMT3 (SC-70) <SOT-323> Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RK


    Original     		RSU002N06 SC-70) OT-323> R1010A PDF