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    MOSFET N-CH 200V Search Results

    MOSFET N-CH 200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET N-CH 200V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns FMP26-02P VDSS 43 ID25 T1 5 34 T2 (Electrically Isolated Tab) 11 22 Symbol Test Conditions


    Original     		240ns 150ns FMP26-02P 50/60HZ, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 (Electrically Isolated Tab) T2 11 22 Symbol Test Conditions


    Original     		FMP26-02P 240ns 150ns 50/60HZ, 00A/s PDF

    FMP26-02P

    Abstract: IXYS Class D Switching Amplifiers
    Text: Advance Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings


    Original     		FMP26-02P 240ns 150ns 50/60HZ, 00A/s FMP26-02P IXYS Class D Switching Amplifiers PDF

    Untitled

    Abstract: No abstract text available
    Text: SMN09L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=9nC (Typ.)  Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)  100% avalanche tested  RoHS compliant device


    Original     		SMN09L20D SMN09L20 O-252 09L20 27-SEP-13 KSD-T6O024-001 PDF

    04l20

    Abstract: No abstract text available
    Text: SMN04L20IS Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device


    Original     		SMN04L20IS SMN04L20 04L20 01-OCT-13 KSD-T6Q017-001 04l20 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device


    Original     		SMN04L20D SMN04L20 O-252 04L20 01-OCT-13 KSD-T6O036-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device


    Original     		SMN04L20D SMN04L20 O-252 04L20 29-AUG-11 KSD-T6O036-000 PDF

    SMN630L

    Abstract: No abstract text available
    Text: SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=12nC (Typ.)  Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)  100% avalanche tested  RoHS compliant device


    Original     		SMN630LD SMN630L O-252 13-AUG-14 KSD-T6O052-000 SMN630L PDF

    SMN01L20

    Abstract: No abstract text available
    Text: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information Part Number


    Original     		SMN01L20Q SMN01L20 OT-223 01-OCT-13 KSD-T5A009-001 SMN01L20 PDF

    IS085

    Abstract: No abstract text available
    Text: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information D S Part Number


    Original     		SMN01L20Q SMN01L20 OT-223 26-AUG-11 KSD-T5A009-000 IS085 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level G ate Drive 0.8Q > cn Rugged G ate O xide T e ch n o lo g y a ♦ II ^D S o n = ♦ A va la n ch e Rugged T e ch n o lo g y ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


    OCR Scan     		IRL620A O-220 PDF

    T518

    Abstract: No abstract text available
    Text: IRL620 A d van ced Power MOSFET FEATURES 200 V 0.8Q > Rugged G ate O xide T e ch n o lo g y cn ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


    OCR Scan     		IRL620 O-220 T518 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL630 A d v a n c e d Power MOSFET FEATURES 200 V 0.4Q > Rugged G ate O xide T e ch n o lo g y CO ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


    OCR Scan     		IRL630 O-220 PDF

    SSD20N20-125D

    Abstract: MosFET MOSFET N-CH 200V
    Text: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


    Original     		SSD20N20-125D O-252 O-252 13-Sep-2013 SSD20N20-125D MosFET MOSFET N-CH 200V PDF

    diode smd 1D

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1554A International IQ R Rectifier HEXFET POWER MOSFET IRFN9240 P-CH A N N EL -200 Volt, 0.51 £2 HEXFET Product Summary H E X F E T te c h n o lo g y is th e key to In te rn a tio n a l Rectifier’s advanced line of power MOSFET transis­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BV dss = 200 V • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^DS on = 0.085 £2 lD = 21.3 A ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		IRFS250A GG3b333 G03b33M G03b335 PDF

    SSD14N25-280D

    Abstract: MosFET
    Text: SSD14N25-280D 10.9A , 250V , RDS ON 280mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


    Original     		SSD14N25-280D O-252 O-252 21-Mar-2013 SSD14N25-280D MosFET PDF

    SMK1820

    Abstract: marking code MJ Marking Code 18A TO-220F-3
    Text: SMK1820FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) : RDS(on)=0.17Ω(Max.) D G Ordering Information


    Original     		SMK1820FJ SMK1820 O-220F-3L SDB20D45 KSD-T0O072-000 SMK1820 marking code MJ Marking Code 18A TO-220F-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage: BVDSS=200V Min. Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17 (Max.)


    Original     		SMK1820D SMK1820 O-252 KSD-T6O013-001 PDF

    SMK630

    Abstract: No abstract text available
    Text: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)


    Original     		SMK630F SMK630 O-220F-3L SDB20D45 KSD-T0O043-002 SMK630 PDF

    smk 630

    Abstract: SMK630D SMK630 mosfet 45a 200v SMK630 TO-252
    Text: SMK630D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)


    Original     		SMK630D SMK630 O-252 KSD-T6O014-001 smk 630 SMK630D SMK630 mosfet 45a 200v SMK630 TO-252 PDF

    SMK1820

    Abstract: SMK1820D mosfet VDS 30V ID 18A TO 252 mosfet 30V 18A TO 252
    Text: SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage: BVDSS=200V Min. Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.)


    Original     		SMK1820D SMK1820 O-252 KSD-T6O013-001 SMK1820 SMK1820D mosfet VDS 30V ID 18A TO 252 mosfet 30V 18A TO 252 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMN09L20D Advanced LOGIC N-Ch MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)


    Original     		SMN09L20D SMN09L20 O-252 09L20 KSD-T6O024-000 PDF

    SMK630

    Abstract: mosfet 45a 200v
    Text: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)


    Original     		SMK630F SMK630 O-220F-3L SDB20D45 KSD-T0O043-001 SMK630 mosfet 45a 200v PDF