MOSFET ON N02G Search Results

MOSFET ON N02G Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET ON N02G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
n02g Abstract: 85 n02g 85N02G ON n02g mosfet on n02g 85n02 80 n02g 369D NTD85N02R 85N02R Text: NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N−Channel, DPAK/IPAK http://onsemi.com Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Low Gate Charge to Minimize Switching Losses	Original	NTD85N02R NTD85N02R/D n02g 85 n02g 85N02G ON n02g mosfet on n02g 85n02 80 n02g 369D NTD85N02R 85N02R	PDF
n02g Abstract: 85N02G 85 n02g mosfet 80 n02g 85N02R on n02g 85N02RG NTD85N02R mosfet on n02g DPak Package size Text: NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N−Channel, DPAK/IPAK http://onsemi.com Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Low Gate Charge to Minimize Switching Losses	Original	NTD85N02R NTD85N02R/D n02g 85N02G 85 n02g mosfet 80 n02g 85N02R on n02g 85N02RG mosfet on n02g DPak Package size	PDF
85 n02g Abstract: NTD85N02R Text: NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N−Channel, DPAK/IPAK http://onsemi.com Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Low Gate Charge to Minimize Switching Losses	Original	NTD85N02R NTD85N02R/D 85 n02g NTD85N02R	PDF
NTD30N02G Abstract: No abstract text available Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available http://onsemi.com	Original	NTD30N02 tpv10 NTD30N02/D NTD30N02G	PDF
n02g Abstract: 85 n02g 80 n02g d30n02 NTD30N02 NTD30N02G NTD30N02T4 NTD30N02T4G ON n02g Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available http://onsemi.com	Original	NTD30N02 tpv10 NTD30N02/D n02g 85 n02g 80 n02g d30n02 NTD30N02 NTD30N02G NTD30N02T4 NTD30N02T4G ON n02g	PDF
n02g Abstract: 80 n02g 80N02 Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant	Original	NTD80N02 NTD80N02/D n02g 80 n02g 80N02	PDF
80n02g Abstract: n02g 80n02 80 n02g mosfet 80 n02g 80-N02G mosfet on n02g ON n02g 80-N02 85 n02g Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant	Original	NTD80N02 NTD80N02/D 80n02g n02g 80n02 80 n02g mosfet 80 n02g 80-N02G mosfet on n02g ON n02g 80-N02 85 n02g	PDF