Untitled
Abstract: No abstract text available
Text: FQB34P10 / FQI34P10 P-Channel QFET MOSFET -100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQB34P10
FQI34P10
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Untitled
Abstract: No abstract text available
Text: FQB34P10 / FQI34P10 P-Channel QFET MOSFET -100 V, -33.5 A, 60 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQB34P10
FQI34P10
FQI34P10
17Not
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Untitled
Abstract: No abstract text available
Text: FQB34P10 P-Channel QFET MOSFET 100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQB34P10
FQB34P10
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OM12P10SA
Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •
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OM23P06ST
OM20P10ST
OM12P10ST
OM8P20ST
OM8P25ST
OM2P50ST
OM23P06SA
OM20P10SA
OM12P10SA
OM8P20SA
OM2P50ST
OM8P25SA
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AAT4250
Abstract: AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 AAT4280IGU-3
Text: PRODUCT DATASHEET AAT4280 SmartSwitchTM Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical RDS ON
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AAT4280
AAT4280
AAT4250
AAT4280-1
AAT4280-2
AAT4280-3
SC70JW-8
AAT4280IGU-3
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET SOT-363 GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON .
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OT-363
CJ3139KDW
OT-363
CJ3139K
-200mA,
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ML5203
Abstract: sot-23 marking code pe AN-994 application IRLML2502 IRLML
Text: PD - 95060A IRLML6402PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET l SOT-23 Footprint l Low Profile <1.1mm l Available in Tape and Reel l Fast Switching l Lead-Free Description l D l VDSS = -20V G RDS(on) = 0.065Ω S These P-Channel MOSFETs from International Rectifier utilize
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5060A
IRLML6402PbF
OT-23
EIA-481
EIA-541.
ML5203
sot-23 marking code pe
AN-994
application IRLML2502
IRLML
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT4601A SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601A SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET
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AAT4601A
AAT4601A
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gsm2311
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart
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GSM2311,
-20V/-4
-20V/-3
-20V/-2
OT-23-3L
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gsm2311
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM3981,
-20V/-3
-20V/-2
-20V/-1
Lane11
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IRLML6402PBF
Abstract: No abstract text available
Text: PD - 95060 IRLML6402PbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize
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IRLML6402PbF
OT-23
EIA-481
EIA-541.
IRLML6402PBF
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM2367AS,
-20V/-2
OT-23
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM2301AS,
-20V/-2
OT-23
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Untitled
Abstract: No abstract text available
Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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-30V/-3
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM3413A,
-20V/-2
-20V/-1
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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-20V/-2
OT-23
Lane11
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516MA
Abstract: SOP8 1251
Text: PRODUCT DATASHEET AAT4601 SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET
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AAT4601
AAT4601
516MA
SOP8 1251
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM2367S,
-20V/-3
-20V/-2
OT-23-3L
Lane11
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gsm2301
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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-20V/-2
OT-23-3L
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gsm2301
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Untitled
Abstract: No abstract text available
Text: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage
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Si4967DY
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Abstract: No abstract text available
Text: Si4965DY VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL Drain-Source Voltage L IM IT
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Si4965DY
S2SM735
DD17flflT
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Abstract: No abstract text available
Text: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET
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Si4927DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si6955DQ VISH A Y Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (//) Id (A) 0.085 @ VGS = —10 V ±2 .5 0.19 @ VGs = —4.5 V ±1 .8 -3 0 Si Q S2 Q Di d2 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6955DQ Top View P-Channel MOSFET P-Channel MOSFET
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Si6955DQ
S-56944â
23-Nov-98
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TO-253 SILICONIX
Abstract: No abstract text available
Text: SÌ6955DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET Vos (V) ^O S(O M } ( f i) lD (A) 0.085 @ V q S = -1 0 V -30 0.19 @ Vos = "4-5 V 2 Si s o Q TSSOP-8 3i O G2 i} It Top View Ô o, Ô d2 P-Channel MOSFET P-Channel MOSFET SYMBOL LIM IT Drain-Source Voltage
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6955DQ
S-56944--Rev.
23-Nov-98
TO-253 SILICONIX
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