Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
|
Original
|
RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
|
Original
|
SSM6E03TU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
|
Original
|
SSM6E03TU
|
PDF
|
IRF95
Abstract: IRF9510 p channel mosfet 100v TA17541
Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
|
Original
|
IRF95
O220AB
IRF9510
IRF95
IRF9510
p channel mosfet 100v
TA17541
|
PDF
|
MCH3314
Abstract: SCH2805
Text: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
|
Original
|
SCH2805
ENN7760
MCH3314)
SB0105)
MCH3314
SCH2805
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
|
Original
|
SCH2805
ENN7760
MCH3314)
SB0105)
SCH2805/D
|
PDF
|
power BJT PNP
Abstract: BJT pnp 45V vertical mosfet
Text: SYNC POWER CORP. Technical Review of P-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN001 1 Measuring P-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3
|
Original
|
AN001
power BJT PNP
BJT pnp 45V
vertical mosfet
|
PDF
|
CPH3309
Abstract: CPH5835 MCH5835 SBS010M
Text: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained
|
Original
|
CPH5835
ENN8207
CPH3309)
SBS010M)
CPH3309
CPH5835
MCH5835
SBS010M
|
PDF
|
MCH3339
Abstract: MCH5823 SS10015M
Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)
|
Original
|
MCH5823
ENN7757
MCH3339)
SS10015M)
MCH3339
MCH5823
SS10015M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
SSM6E01TU
|
PDF
|
SSM6E01TU
Abstract: HIGH POWER MOSFET TOSHIBA
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
SSM6E01TU
SSM6E01TU
HIGH POWER MOSFET TOSHIBA
|
PDF
|
CPH5802
Abstract: No abstract text available
Text: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)
|
OCR Scan
|
ENN6899
CPH5802
CH3306)
SBS004)
CPH5802]
|
PDF
|
ENN8206
Abstract: CPH5810 MCH3312
Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)
|
Original
|
CPH5810
ENN8206
MCH3312)
SBS001)
ENN8206
CPH5810
MCH3312
|
PDF
|
utc 324
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
|
Original
|
UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23-3
OT-23
QW-R502-133
utc 324
|
PDF
|
|
|
F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
|
Original
|
94372C
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
|
PDF
|
P-channel N-Channel power mosfet SO-8
Abstract: IRF7350PBF IRF7350
Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V
|
Original
|
IRF7350PbF
-100V
EIA-481
EIA-541.
P-channel N-Channel power mosfet SO-8
IRF7350PBF
IRF7350
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
|
Original
|
UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
UT2305L-AG3-R
UT2305G-AG3-R
OT-23-3
OT-23
|
PDF
|
KTA 3-25
Abstract: SSM6E01TU SSM6E
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low
|
Original
|
SSM6E01TU
KTA 3-25
SSM6E01TU
SSM6E
|
PDF
|
td 1603
Abstract: LS3N164
Text: LS3N164 P-CHANNEL MOSFET The LS3N164 is an enhancement mode P-Channel Mosfet The LS3N164 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
|
Original
|
LS3N164
LS3N164
375mW
td 1603
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
SSM6E01TU
|
PDF
|
3N163
Abstract: TO72 package
Text: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
|
Original
|
3N163
3N163
375mW
TO72 package
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LS3N163 P-CHANNEL MOSFET The LS3N163 is an enhancement mode P-Channel Mosfet The LS3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
|
Original
|
LS3N163
LS3N163
375mW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
SSM6E01TU
|
PDF
|
IRF7338
Abstract: MOSFET N-CHANNEL 60v 60A
Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
|
Original
|
94372B
IRF7338
EIA-481
EIA-541.
IRF7338
MOSFET N-CHANNEL 60v 60A
|
PDF
|
