MOSFET PCH 3A 60V Search Results

MOSFET PCH 3A 60V Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

MOSFET PCH 3A 60V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENA1822A VEC2616 Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8 Features • • • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET	Original	ENA1822A VEC2616 PW10s, 900mm2 A1822-9/9	PDF
Untitled Abstract: No abstract text available Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly	Original	STS4C3F60L STS4C3F60L	PDF
JESD97 Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly	Original	STS4C3F60L STS4C3F60L JESD97 s4c3f60l mosfet pch 3a 60v	PDF
mosfet pch 3a 60v Abstract: JESD97 STS4C3F60L Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly	Original	STS4C3F60L STS4C3F60L mosfet pch 3a 60v JESD97	PDF
n-channel so8 60v Abstract: STS4C3F60L s4c3f60l Back Light Inverter Text: STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) 60 V 60 V < 0.055 Ω < 0.120 Ω 4A 3A •	Original	STS4C3F60L n-channel so8 60v STS4C3F60L s4c3f60l Back Light Inverter	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM35600KA-S •General Description ■Features ELM35600KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)	Original	ELM35600KA-S ELM35600KA-S P5806ND5G O-252-5 MAY-23-2005	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)	Original	ELM34608AA-N ELM34608AA-N P5806NVG	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)	Original	ELM34608AA-N ELM34608AA-N P5806NVG Oct-01-2004	PDF
Untitled Abstract: No abstract text available Text: コンプリメンタリーパワー MOSFET ELM34608AA-N •概要 ■特長 ELM34608AA－N は低入力容 N チャンネル P チャンネル量低電圧駆動、低オン抵抗とい・ Vds=60V う特性を備えた大電流 MOSFET ・ Id=4.5A	Original	ELM34608AA-N ELM34608AAï P5806NVG Oct-01-2004	PDF
Flyback Transformers SANYO TV Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)	Original	CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams	PDF
RD1004 Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006 Text: ディスクリートデバイス 2010-7 環境にやさしい製品超アナログ技術を極めるPower ＆RFデバイス Power 電源市場耐熱性高アバランシェ高耐圧・大電流高効率高ESD ・パワーマネジメント（LCDPDP、PC電源、照明）	Original	CDMA2000] 3-7300Fax OVA21 052-453-1331Fax 06-6353-3361Fax 03-5701-1111Fax 078-928-8010Fax 078-331-8400Fax 075-371-4058Fax 052-459-3501Fax RD1004 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006	PDF
fx6umj06 Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6UMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6UMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2	Original	FX6UMJ-06 fx6umj06	PDF
fx6smj06 Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2	Original	FX6SMJ-06 fx6smj06	PDF
mosfet pch 3a 60v Abstract: FX6KMJ-06 Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6KMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX6KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2	Original	FX6KMJ-06 mosfet pch 3a 60v FX6KMJ-06	PDF

fx6vsj-06 Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX6VSJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5	Original	FX6VSJ-06 fx6vsj-06	PDF
W359 Abstract: FW359 75493 Text: Ordering number : ENN7549 FW359 N-Channel and P-Channel Silicon MOSFETs FW359 Ultrahigh-Speed Switching Applications Features The FW359 in corporates a N-channel MOSFET unit : mm and a P-channel MOSFET that feature 2129 low ON-resistance, ultrahigh-speed switching,	Original	ENN7549 FW359 FW359 FW359] W359 75493	PDF
FX6ASJ-06 Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF
AP4578GH Abstract: No abstract text available Text: AP4578GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D1/D2 ▼ Good Thermal Performance N-CH BVDSS 60V RDS ON ▼ Fast Switching Performance 72mΩ ID S1 G1 S2 9A P-CH BVDSS	Original	AP4578GH O-252-4L P-cha00us 100ms AP4578GH	PDF
fx3kmj-06 Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX3KMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX3KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2	Original	FX3KMJ-06 fx3kmj-06	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX3VSJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5	Original	FX3VSJ-06	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX3ASJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX3ASJ-06 OUTLINE DRAWING 0.5 ± 0.1 1.0 2.3 2.3 2.3 min 0.9 max 1.0 max	Original	FX3ASJ-06	PDF
fx3umj06 Abstract: No abstract text available Text: MITSUBISHI Pch POWER MOSFET RY A N I FX3UMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX3UMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2	Original	FX3UMJ-06 fx3umj06	PDF
Untitled Abstract: No abstract text available Text: Complementary MOSFET ELM14612AA-N •General Description ■Features ELM14612AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A(Vgs=10V) Rds(on) < 56mΩ(Vgs=10V) Rds(on) < 77mΩ(Vgs=4.5V)	Original	ELM14612AA-N ELM14612AA-N	PDF
Untitled Abstract: No abstract text available Text: VEC2616 Ordering number : ENA1822 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs VEC2616 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive	Original	ENA1822 VEC2616 PW10s, 900mm2 A1822-6/6	PDF

MOSFET PCH 3A 60V Search Results

MOSFET PCH 3A 60V Result Highlights (5)

MOSFET PCH 3A 60V Datasheets Context Search

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JESD97

mosfet pch 3a 60v

n-channel so8 60v

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Flyback Transformers SANYO TV

RD1004

fx6umj06

fx6smj06

mosfet pch 3a 60v

fx6vsj-06

W359

FX6ASJ-06

AP4578GH

fx3kmj-06

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fx3umj06

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