HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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mosfet 13w 05
Abstract: RA13H8891MA RA13H8891MA-101 MOSFET Power Amplifier Module 900Mhz
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
mosfet 13w 05
RA13H8891MA-101
MOSFET Power Amplifier Module 900Mhz
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RA13H8891MB-101
Abstract: H11S MOSFET Power Amplifier Module 900Mhz
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
RA13H8891MB-101
H11S
MOSFET Power Amplifier Module 900Mhz
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MOSFET Power Amplifier Module 900Mhz
Abstract: RA01L8693MA GP20
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the
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RA01L8693MA
865-928MHz
RA01L8693MA
MOSFET Power Amplifier Module 900Mhz
GP20
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the
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RA01L8693MA
865-928MHz
RA01L8693MA
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13w marking code
Abstract: Code 13w marking code 13W rf MARKING "13W" MOSFET Power Amplifier Module 900Mhz
Text: <Silicon RF Power Modules > RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range. The battery can be connected directly to the drain of the
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RA13H8891MA
RA13H8891MA
13-watt
915-MHz
13w marking code
Code 13w
marking code 13W
rf MARKING "13W"
MOSFET Power Amplifier Module 900Mhz
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
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MARKING CODE 13w
Abstract: 13W MARKING
Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
Oct2011
MARKING CODE 13w
13W MARKING
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range. The battery can be connected directly to the drain of the
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
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MOSFET Power Amplifier Module 900Mhz
Abstract: RA13H8891MA RA13H8891MA-101 MOSFET Amplifier Module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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Original
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
MOSFET Power Amplifier Module 900Mhz
RA13H8891MA-101
MOSFET Amplifier Module
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MOSFET Power Amplifier Module 900Mhz
Abstract: H11S RF MOSFET MODULE RA13H8891MB-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to
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Original
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
MOSFET Power Amplifier Module 900Mhz
H11S
RF MOSFET MODULE
RA13H8891MB-101
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H11S
Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
H11S
RA13H8891MA-01
RA13H8891MA-E01
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RA13H8891MA
Abstract: RA13H8891MA-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
RA13H8891MA-01
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H11S
Abstract: RA13H8891MB-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
H11S
RA13H8891MB-01
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RA13H8891MA-101
Abstract: RA13H8891MA
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
RA13H8891MA-101
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transistor marking code H11S
Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
transistor marking code H11S
MOSFET Power Amplifier Module 900Mhz
RF MOSFET MODULE
H11S
RA13H8891MB-101
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Untitled
Abstract: No abstract text available
Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the
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MC33170
900MHz
1800MHz
900mV
MC33170
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HD6413003F16
Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
Text: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744
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ZM33064C
ZSD1000D8
TD300IN
TSH10IN
TSH11IN
TS271CN
TS274ID
TS902IN
TS912IN
TS3V393IN
HD6413003F16
hd6413002f16
HD6473042F16
TL084-LM324
piezo autotransformer
HD6413004F16
HD6413005F16
laptop inverter SCHEMATIC TRANSISTOR
6N138 SPICE
HD6413003F-16
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Untitled
Abstract: No abstract text available
Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the
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MC33170
900MHz
1800MHz
900mV
MC33170DTB
948G-01
MC33170DTBR2
948G-01
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Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –
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DS750
87C750
80C51
PZ3032-12A44
BUK101-50GS
BUW12AF
BU2520AF
16kHz
BY328
Zener Diode 3v 400mW
transistor bc548b
BC107 transistor
TRANSISTOR bc108
bc547 cross reference chart
Transistor BC109
DIAC OB3
DIAC Br100
74HCT IC family spec
TRANSISTOR mosfet BF998
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DCS-1800
Abstract: GSM-900 MC33170 MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MTSF3N02HD dcs response time DCS 1800 to GSM converter
Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the
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MC33170
MC33170
900MHz
1800MHz
900mV
r14525
MC33170/D
DCS-1800
GSM-900
MC33170DTB
MC33170DTBR2
MRFIC0919
MRFIC1819
MTSF3N02HD
dcs response time
DCS 1800 to GSM converter
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MC33170
Abstract: MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MRFIC1859 MTSF3N02HD dcs response time RF 900MHz TO 1800MHz
Text: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the
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MC33170
MC33170
900MHz
1800MHz
900mV
r14153
MC33170/D
MC33170DTB
MC33170DTBR2
MRFIC0919
MRFIC1819
MRFIC1859
MTSF3N02HD
dcs response time
RF 900MHz TO 1800MHz
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UC3843 spice model
Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
Text: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,
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BR101/D
ECL300,
UC3843 spice model
project on water level control using ic 7400
mosfet cross reference
mhw612
mc146805g
MC88110
MC68020 Minimum System Configuration
smart UPS APC CIRCUIT diagram
ASSIST09
mhw613
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Untitled
Abstract: No abstract text available
Text: Back MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the
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MC33170
900MHz
1800MHz
900mV
r14525
MC33170/D
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