MOSFET RF P-CHANNEL VHF Search Results

MOSFET RF P-CHANNEL VHF Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

MOSFET RF P-CHANNEL VHF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SELF vk200 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER	OCR Scan	MRF134 68-ohm AN215A SELF vk200	PDF
301AT Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	OCR Scan	MRF151 22dBTyp) MRF151 301AT	PDF
VK200 inductor of high frequencies Abstract: VK200 INDUCTOR Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F175LV M R F175LU The RF MOSFET Line RF P o w er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs . . . designed for broadband commercial and military appli cations using single	OCR Scan	MRF175LV MRF175LU MRF175L MRF175LV MRF175LU VK200 inductor of high frequencies VK200 INDUCTOR	PDF
RF MOSFETs Abstract: "RF MOSFETs" Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz	OCR Scan	RF173* RF173CQ MRF173/CQ. AN721, MRF173 MRF173CQ RF MOSFETs "RF MOSFETs"	PDF
ferroxcube toroids Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push	OCR Scan	MRF175GV MRF175GU MRF175G MRF176 MRF175GV MRF175GU ferroxcube toroids	PDF
136y Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up	OCR Scan	MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068	PDF
Nippon capacitors Abstract: No abstract text available Text: Order this data sheet by MRF5003/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF5003 RF Power Field Effect Ttaransistor M otorola P referre d D evice N-Channel Enhancem ent-Mode The MRF5003 is designed for broadband commercial and industrial applications at	OCR Scan	MRF5003/D MRF5003 Nippon capacitors	PDF
15J02 Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen	OCR Scan	F5015 RF5015 AN215A, MRF5015 15J02 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015	PDF
F5003 Abstract: 1N4734 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	OCR Scan	F5003 MRF5003 MRFS003 AN215A, F5003 1N4734	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF141G RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . •. desig n ed fo r b roa d b an d co m m ercia l and m ilita ry a pp licatio n s at frequencies to 175 MHz. The h ig h pow er, high gain and broadband p e rfo rm a n ce o f th is device m akes	OCR Scan	MRF141G MRF141G F141G	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING	OCR Scan	2SK3074 961001EAA1 2200pF 2200pF	PDF
MRF151G Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF151G RF P o w e r Field-Effect T ra n sisto r N-Channel Enhancement-Mode MOSFET . . . designed fo r b roadband co m m ercia l and m ilita ry a pp licatio n s at fre q u en cies to 175 MHz. The h ig h pow er, high gain and broadband perfo rm a n ce o f th is device makes	OCR Scan	RF151G MRF151G	PDF
transistor 936 Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100 Text: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization	OCR Scan	DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100	PDF
Untitled Abstract: No abstract text available Text: HITACHI 3SK237-Silicon N-Channel Dual Gâte MOSFET Application C M P A K -4 UHF/VHF RF amplifier Features 2 • High gain and low niose • Capable of low voltage opération 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C	OCR Scan	3SK237----------Silicon 3SK237 3SK237	PDF

2SK3074 Abstract: No abstract text available Text: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)	OCR Scan	2SK3074 630mW 2200pF 520MHz 2SK3074	PDF
STO-175 Abstract: MRF151 MOSFET RF POWER TRANSISTOR VHF Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field -E ffect Transistor MRF151 N-Channel Enhancement-Mode MOSFET D e s ig n e d fo r b ro a d b a n d co m m e rc ia l a n d m ilita ry a p p lic a tio n s a t fre q u e n c ie s to 175 M H z. T h e high pow e r, high g a in a n d b ro a d b a n d p e rfo rm a n c e o f th is	OCR Scan	MRF151 STO-175 MOSFET RF POWER TRANSISTOR VHF	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER Output Power Power Gain Drain Efficiency P O = 7 -5 W GP= 11.7dB 7d ^ 5 0 % M A X IM U M RATINGS Ta = 25°C	OCR Scan	2SK3075 961001EAA1 2200pF	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 7 is d e s ig n e d fo r b ro a d b a n d c o m m e rc ia l and in d u s tria l a p p lic a tio n s at fre q u e n c ie s to 520 M Hz. The high ga in and b ro a d b a n d	OCR Scan	MRF5007 AN215A,	PDF
MRF175 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF175LV MRF175LU The RF MOSFET Line RF P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode . . . designed fo r b roadband co m m ercia l and m ilita ry a pp licatio n s using sing le ended c ir cu its at frequencies to 400 MHz. The high pow er, high gain and broadband perfo rm a n ce	OCR Scan	MRF175LV MRF175LU MRF175	PDF
transistor D 1666 Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3	Original	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101	PDF
MITSUBISHI RF POWER MOS FET Abstract: 071J Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3	Original	RD30HVF1 175MHz RD30HVF1 RD30HVF1-101 Oct2011 MITSUBISHI RF POWER MOS FET 071J	PDF
RD15HVF1-101 Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF	Original	RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 RD15HVF1-101 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d	PDF
RD15HVF1 Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica	Original	RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w	PDF

MOSFET RF P-CHANNEL VHF Search Results

MOSFET RF P-CHANNEL VHF Result Highlights (5)

MOSFET RF P-CHANNEL VHF Datasheets Context Search

SELF vk200

301AT

VK200 inductor of high frequencies

RF MOSFETs

ferroxcube toroids

136y

Nippon capacitors

15J02

F5003

Untitled

Untitled

MRF151G

transistor 936

Untitled

2SK3074

STO-175

Untitled

Untitled

MRF175

transistor D 1666

Untitled

MITSUBISHI RF POWER MOS FET

RD15HVF1-101

RD15HVF1