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    MOSFET ROHM Search Results

    MOSFET ROHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET ROHM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


    Original     		PDF

    20V P-Channel Power MOSFET

    Abstract: US6M2
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		US6M11 R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		US6M11 R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


    Original     		PDF

    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.


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    EM6M1

    Abstract: MOSFET IGSS 100A
    Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.


    Original     		US6M11 R0039A PDF

    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.


    Original     		PDF

    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.


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    TSMT6

    Abstract: voltage source inverter z source inverter QS6M4
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02


    Original     		R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: ES6U41 2.5V Drive Nch+SBD MOSFET ES6U41 Dimensions Unit : mm Structure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 Features 1) Nch MOSFET and schottky barrier diodeare put in WEMT6 package. 2) High-speed switching, Low On-resistance.


    Original     		ES6U41 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Dimensions Unit : mm Silicon N-channel MOSFET/ Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Application Switching


    Original     		SH8M12 R1120A PDF

    EM6K6

    Abstract: No abstract text available
    Text: EM6K6 EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up Switching Regulator with Built-in Power MOSFET No.13027EFT09 BD8314NUV ●Description ROHM’s High-efficiency Step-up Switching Regulator Built-in Power MOSFET BD8314NUV generates step-up output


    Original     		13027EFT09 BD8314NUV BD8314NUV PDF

    Untitled

    Abstract: No abstract text available
    Text: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up Switching Regulator with Built-in Power MOSFET No.10027ECT03 BD8311NUV ●Description ROHM’s High-efficiency Step-up Switching Regulator Built-in Power MOSFET BD8311NUV generates step-up output


    Original     		BD8311NUV 10027ECT03 BD8311NUV R1010A PDF