smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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symbol 16n50e
Abstract: 16N50E circuit 16n50e ms5f6867 smd code Hall MOSFET SMD MARKING CODE 618 FMC16N50E FMB16N50E Diode type SMD marking SJ N channel mosfet TO220
Text: Device Name DATE DRAWN July.-19-'07 CHECKED July.-19-'07 CHECKED July.-19-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
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FMI16N50E
FMC16N50E
FMB16N50E
MS5F6867
H04-004-03
symbol 16n50e
16N50E
circuit 16n50e
ms5f6867
smd code Hall
MOSFET SMD MARKING CODE 618
FMC16N50E
FMB16N50E
Diode type SMD marking SJ
N channel mosfet TO220
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16n60e
Abstract: marking code EA SMD MOSFET mosfet smd code tc FMB20N50E mosfet marking ke
Text: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMI20N50E
FMC20N50E
FMB20N50E
MS5F6839
MS5F68e
H04-004-03
16n60e
marking code EA SMD MOSFET
mosfet smd code tc
FMB20N50E
mosfet marking ke
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16n60e
Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
Text: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMI16N60E
FMC16N60E
FMB16N60E
MS5F6842
MS5F68e
H04-004-03
16n60e
marking code EA SMD MOSFET
Method CF
st smd diode marking code ex
KE 16A DIODE
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13N60E
Abstract: Diode SMD SJ 65a SMD Diode KE Sj 07 DIODE SMD fmc1 fuji smd lot code 13N60 Diode type SMD marking SJ Diode type SMD marking SJ 09 Diode type SMD SJ 09
Text: Device Name DATE DRAWN Jun.-12-'07 CHECKED Jun.-12-'07 CHECKED Jun.-12-'07 NAME : APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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FMI13N60E
FMC13N60E
FMB13N60E
MS5F6870
MS5F687specification
H04-004-03
13N60E
Diode SMD SJ 65a
SMD Diode KE
Sj 07 DIODE SMD
fmc1
fuji smd lot code
13N60
Diode type SMD marking SJ
Diode type SMD marking SJ 09
Diode type SMD SJ 09
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85GA
Abstract: P850-G120-WH P500-G120-WH GR-1089 P500-G200-WH MOV surge protection circuit diagram k20e VISHAY BC 047 P850-G200-WH
Text: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package
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P500-G
P850-G
P500-G
P850-G120-WH
MOV-10D361K
GSD2004S-V
MMBD2004S
85GA
P850-G120-WH
P500-G120-WH
GR-1089
P500-G200-WH
MOV surge protection circuit diagram
k20e
VISHAY BC 047
P850-G200-WH
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P500-Gxxx
Abstract: fultec GR-1089 P500-G200-WH P850-G120-WH 85GA 50ga MOSFET SMD MARKING CODE 618 bourns potentiometer 321
Text: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package
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P500-G
P850-G
P500-G
P850-G120-WH
MOV-10D361K
GSD2004S-V
MMBD2004S
P500-Gxxx
fultec
GR-1089
P500-G200-WH
P850-G120-WH
85GA
50ga
MOSFET SMD MARKING CODE 618
bourns potentiometer 321
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CNR-10D201K
Abstract: CNR10D201K CNR-10D361K MOSFET SMD MARKING CODE 618 bourns potentiometer 321 CNR MOV 616A G-120 C Mosfet CNR10D201 DIODE smd marking v1
Text: PL IA NT CO M *R oH S Features Applications • Formerly ■ POTS linecards ■ ■ VolP equipment ■ ■ ■ ■ ■ brand Extremely high speed performance Blocks high voltages and currents Two TBU protectors in one small package Simple, superior circuit protection
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P500-G
P850-G
E315805.
GR-1089
P850-G
P850-G120-WH
CNR-10D201K
CNR10D201K
CNR-10D361K
MOSFET SMD MARKING CODE 618
bourns potentiometer 321
CNR MOV
616A
G-120 C Mosfet
CNR10D201
DIODE smd marking v1
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CNR MOV
Abstract: 85GA CNR-10D201K
Text: PL IA NT CO M *R oH S Features Applications • Formerly ■ POTS linecards ■ ■ VolP equipment ■ ■ ■ ■ ■ brand Extremely high speed performance Blocks high voltages and currents Two TBU protectors in one small package Simple, superior circuit protection
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P500-G
P850-G
E315805.
GR-1089
P850-G
P850-G120-WH
CNR MOV
85GA
CNR-10D201K
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20n50e
Abstract: 20N50ES 20n50 FMB20N50ES marking code SJ transistors FMI20N50E
Text: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI20N50ES
FMC20N50ES
FMB20N50ES
MS5F7231
H04-004-03
20n50e
20N50ES
20n50
FMB20N50ES
marking code SJ transistors
FMI20N50E
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16N50ES
Abstract: 16n50e MS5F7226 RGS18 smd code font type
Text: Device Name DATE DRAWN Nov.-21-'08 CHECKED Nov.-21-'08 CHECKED Nov.-21-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI16N50ES
FMC16N50ES
FMB16N50ES
MS5F7226
H04-004-03
16N50ES
16n50e
MS5F7226
RGS18
smd code font type
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Diode SMD SJ 94
Abstract: 16N60ES FUJI DATE CODE DIODE marking code SJ
Text: Device Name DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI16N60ES
FMC16N60ES
FMB16N60ES
MS5F7247
H04-004-03
Diode SMD SJ 94
16N60ES
FUJI DATE CODE
DIODE marking code SJ
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12N50E
Abstract: 12N50ES FMI12N50E Diode type SMD marking SJ Sj 07 DIODE SMD FUJI DATE CODE fmi12n50es and/sj 1408
Text: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI12N50ES
FMC12N50ES
FMB12N50ES
MS5F7223
H04-004-03
12N50E
12N50ES
FMI12N50E
Diode type SMD marking SJ
Sj 07 DIODE SMD
FUJI DATE CODE
fmi12n50es
and/sj 1408
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XPEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that
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P500-G
P850-G
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LE9530
Abstract: LE9520 10D391K GR-1089-CORE K501 smd code marking pk oh 07D201K k45 mosfet 10D391
Text: PL IA NT CO M *R oH S K C955901 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package
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le9530
Abstract: GR-1089-CORE K501 07D201K
Text: PL IA NT CO M *R oH S K C955901 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package
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Untitled
Abstract: No abstract text available
Text: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that
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P500-G
P850-G
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07D201
Abstract: le9530 LE95
Text: PL IA NT CO M *R oH S K C955901 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package
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LE9530
Abstract: LE9520 LE953 GR-1089-CORE L501 TISP4400M3BJ TISP4500H3BJ MOV-10D20 MOV-10D201
Text: PL IA NT CO M *R oH S L C955401 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package
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le9530
Abstract: LE9520 MOV surge protection circuit diagram
Text: PL IA NT CO M *R oH S L C955401 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package
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le9530
Abstract: LE9520 k45 mosfet MOV surge protection circuit diagram 10D391K PL050 c954 PL05 GR-1089-CORE L501
Text: PL IA NT CO M *R oH S L C955401 Features Applications • Superior circuit protection ■ SLIC protection ■ Overcurrent & overvoltage protection ■ Cable & DSL ■ Blocks surges up to rated limits ■ MDU/MTU modems ■ High speed performance ■ ONT ■ Small SMT package
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV65XPE
O-236AB)
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12N60ES
Abstract: 12N60E 12n60 on semiconductor marking code dpack 264MH Sj 07 DIODE SMD dpack marking code 23
Text: Device Name DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI12N60ES
FMC12N60ES
FMB12N60ES
MS5F7204
H04-004-03
12N60ES
12N60E
12n60
on semiconductor marking code dpack
264MH
Sj 07 DIODE SMD
dpack marking code 23
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