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    MOSFET SOT-89 PACKAGE Search Results

    MOSFET SOT-89 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SOT-89 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CXDM4060P

    Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
    Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET


    Original     		PDF CXDM4060P OT-89 CXDM4060P OT-89 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet

    CXDM1002N

    Abstract: PB CXDM1002N sot-89 PF MOSFET SMD MARKING CODE 100V N-Channel MOSFET
    Text: Product Brief CXDM1002N 2.0A, 100V N-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM1002N is a 2.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET, designed for motor control, DC-DC conversion and relay driver applications. This


    Original     		PDF CXDM1002N OT-89 CXDM1002N OT-89 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 PB CXDM1002N sot-89 PF MOSFET SMD MARKING CODE 100V N-Channel MOSFET

    GM3055

    Abstract: GM-305 8A SOT89
    Text: GM3055 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89


    Original     		PDF GM3055 OT-89 OT-89 GM3055 GM-305 8A SOT89

    CHM6426XGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM6426XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. SC-62/SOT-89


    Original     		PDF CHM6426XGP SC-62/SOT-89 250uA CHM6426XGP

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM6426XPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. SC-62/SOT-89


    Original     		PDF CHM6426XPT SC-62/SOT-89 250uA

    2070-P

    Abstract: APM2070P APM2070PD BY 235
    Text: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A , RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • Reliable and Rugged 1 2 3 G D S SOT-89 Package Top View of SOT-89 D Applications • Power Management in Notebook Computer ,


    Original     		PDF APM2070PD -20V/-3A OT-89 OT-89 2070P 2070-P APM2070P APM2070PD BY 235

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT06P03 O-252 OT-89 UT06P03 OT-26 UT06P03G-AB3-R UT06P03G-AG6-R UT06P03L-TN3-R UT06P03G-TN3-R

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    MOSFET SOT-89 package

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM3055LXPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE


    Original     		PDF CHM3055LXPT SC-62/SOT-89 SC-62/SOT-89S 250uA MOSFET SOT-89 package

    CHM3055LXGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE


    Original     		PDF CHM3055LXGP SC-62/SOT-89 250uA CHM3055LXGP

    LND150N8 equivalent

    Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA LND150N8 equivalent depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP01N40G-HF-3 N-channel Enhancement-mode Power MOSFET Fast Switching Characteristics D Low Gate Charge Simple Drive Requirement G 100% Avalanche-tested RoHS-compliant, halogen-free SOT-89 package BV DSS 400V RDS ON 16Ω ID


    Original     		PDF AP01N40G-HF-3 OT-89 200mA AP01N40G-HF-3 AP01N40G OT-89 1000pcs J-STD-020C,

    ln1e

    Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		PDF LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA ln1e depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND

    MOSFET IGSS 100nA VDS 20V

    Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    Original     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA MOSFET IGSS 100nA VDS 20V N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8

    RG611

    Abstract: No abstract text available
    Text: APM3195PD P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-2A, RDS ON =230mΩ(Typ.) @ VGS=-10V RDS(ON)=385mΩ(Typ.) @ VGS=-4.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF APM3195PD -30V/-2A, OT-89 APM3195P OT-89 APM3195 RG611

    APM3054ND

    Abstract: apm3054 sot89 MARKING 3C 48M025 APM3054N STD-020C
    Text: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF APM3054ND OT-89 APM3054N APM3054N APM3054 APM3054ND apm3054 sot89 MARKING 3C 48M025 STD-020C

    apm2070

    Abstract: No abstract text available
    Text: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF APM2070PD -20V/-3A, OT-89 APM2070P OT-89 APM2070

    SGM2305A

    Abstract: p-channel mosfet sot89 5V SGM2305 2305a
    Text: SGM2305A -3.2 A, -30 V, RDS ON 80 mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 A The SGM2305A provide the designer with best combination of fast switching,


    Original     		PDF SGM2305A OT-89 SGM2305A 10sec. 01-June-2008 p-channel mosfet sot89 5V SGM2305 2305a

    Untitled

    Abstract: No abstract text available
    Text: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF APM2070PD -20V/-3A, OT-89 APM2070P APM2070P APM2070

    APM2071

    Abstract: sot-89 MARKING CODE 4A APM2071PD APM2071P STD-020C apm*2071 marking code IR SOT89
    Text: APM2071PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-4A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=75mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF APM2071PD -20V/-4A, OT-89 APM2071P APM2071P APM2071 APM2071 sot-89 MARKING CODE 4A APM2071PD STD-020C apm*2071 marking code IR SOT89

    APM3040ND

    Abstract: STD-020C ED-7500 APM3040
    Text: APM3040ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/3A, RDS ON =31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • • • Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged


    Original     		PDF APM3040ND OT-89 APM3040N APM3040N APM3040 APM3040ND STD-020C ED-7500 APM3040

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET transistors Power MOSFET transistors Features • available in the following packages — MPT3 SC-62, US/European SOT-89 — CPT F5 (SC-63, TO-252 D-PAK) — PSD(D2-PAK) • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on


    OCR Scan     		PDF SC-62, OT-89) SC-63, O-252 2SK2094 2SK2041 2SK2103 2SK2094F5

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: No abstract text available
    Text: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection


    OCR Scan     		PDF LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89 N-Channel Depletion-Mode MOSFET high voltage

    MOSFET 818 ln

    Abstract: No abstract text available
    Text: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection


    OCR Scan     		PDF LND150N3 O-243AA* LND150N8 LND150ND OT-89 MOSFET 818 ln