a2165
Abstract: No abstract text available
Text: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode
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ENA2165
MCH5839
A2165-7/7
a2165
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Untitled
Abstract: No abstract text available
Text: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode
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MCH5839
ENA2165
A2165-7/7
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UK3018BW Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018BW is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for
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UK3018BW
UK3018BW
400mA
UK3018BWG-AL5-R
OT-353
UK3018BWG-AL5t
QW-R209-031.
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2165 MCH5839 P-Channel Power MOSFET http://onsemi.com –20V, –1.5A, 266mΩ, Single MCPH5 with Schottky Diode Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting
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ENA2165
MCH5839
PW10s,
A2165-7/7
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DMG1012
Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS
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A1103-04,
DMG1012
ZVN4206GV
ZXMS6004FFTA
zxmhc3f381n8
DMP2066
DMN2075
DMN2041
ZVN4306G
dmp2035
ZXMHC3A01N8
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082A
tpc8118 equivalent replacement
SSM3J307T
Zener diode smd 071 A01
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toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5
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BCE0082H
toshiba laptop charging CIRCUIT diagram
TPC8123
TPH1400ANH
TPCA8047-H
TPC 8127
TPC8123 cross reference
SSM3J328R
SSM3J334R
TPC8120
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TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
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complementary MOSFET TO252
Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and
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D-81541
A1103-04,
complementary MOSFET TO252
zxmc10a816n
DMG2307L
DMC2700UDM
DMP21D5UFB4
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CHM3413KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE
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CHM3413KGP
SC-88A/SOT-353
SC-88A
CHM3413KGP
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transistor compatible 2SK3569
Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
Text: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series
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TLP285/TLP781)
TB6818FG/TB6819FG)
SCE0024B
SCE0024C
transistor compatible 2SK3569
TK12A65D
2SK3569 equivalent
tk6a65d equivalent
TB-7005
TPCA8019-H
TPCA8023-H
tk10a60d equivalent
TPCA8030-H
p 181 Photocoupler
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MOSFET SC-59 power
Abstract: LBSS138WT1G LBSS138WT3G SC-75
Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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LBSS138WT1G
SC-70
330mm
360mm
MOSFET SC-59 power
LBSS138WT1G
LBSS138WT3G
SC-75
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SC-75
Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Text: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit
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L2SK3019LT1G
100mA)
3000/Tape
L2SK3019LT3G
000/Tape
195mm
150mm
3000PCS/Reel
SC-75
sod-323 kn
MARKING kn SOd323
SOD-323 marking KN
sot-23 single diode mark PD
L2SK3019LT1G
code marking 2M sot-23 MOSFET
l2sk3019
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SPN1443A
Abstract: mosfet sot353 SPN1443AS35RG marking 23A Mosfet sot-353 marking code mosfet vgs 5v
Text: SPN1443A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1443A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPN1443A
SPN1443A
mosfet sot353
SPN1443AS35RG
marking 23A Mosfet
sot-353 marking code
mosfet vgs 5v
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SPP1433A
Abstract: SPP1433AS35RG mosfet sot353
Text: SPP1433A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1433A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPP1433A
SPP1433A
-30V/-2
SPP1433AS35RG
mosfet sot353
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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LBSS138WT1G
SC-70
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mosfet sot353
Abstract: p-channel mosfet sot-353 he Inverter P-Channel 1.8V MOSFET SPP1413A SPP1413AS35RG marking nc sot-353 sot-353 marking code
Text: SPP1413A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPP1413A
SPP1413A
-20V/-3
mosfet sot353
p-channel mosfet
sot-353 he Inverter
P-Channel 1.8V MOSFET
SPP1413AS35RG
marking nc sot-353
sot-353 marking code
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138LT1G N–Channel SOT–23 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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LBSS138LT1G
236AB)
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SPN1423A
Abstract: SPN1423AS35RG mosfet sot353
Text: SPN1423A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPN1423A
SPN1423A
SPN1423AS35RG
mosfet sot353
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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SPP1413A
Abstract: SPP1413AS35RG marking nc sot-353 mosfet sot353
Text: SPP1413A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPP1413A
SPP1413A
-20V/-3
SPP1413AS35RG
marking nc sot-353
mosfet sot353
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SPN1423A
Abstract: SPN1423AS35RG sot-353 marking code
Text: SPN1423A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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SPN1423A
SPN1423A
SPN1423AS35RG
sot-353 marking code
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LBSS138WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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LBSS138WT1G
S-LBSS138WT1G
SC-70
AEC-Q10â
LBSS138WT1G
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