MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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NX7002BKXB
DFN1010B-6
OT1216)
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB950UPE
DFN1010B-6
OT1216)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
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TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
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Untitled
Abstract: No abstract text available
Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV185XN
O-236AB)
gate-sou15
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Untitled
Abstract: No abstract text available
Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV28UN
O-236AB)
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: No abstract text available
Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV20XN
O-236AB)
TRANSISTOR SMD MARKING CODE 1 KW
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Untitled
Abstract: No abstract text available
Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV32UP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV48XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV170UN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV90EN
O-236AB)
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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SMD transistor Marking 1x
Abstract: No abstract text available
Text: PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB8032XP
DFN2020-6
OT1118)
SMD transistor Marking 1x
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65UN
O-236AB)
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MOSFET TRANSISTOR SMD 033
Abstract: 440 transistor
Text: PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB8040XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD 033
440 transistor
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TRANSISTOR SMD MARKING CODE 1v
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB30XN
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE 1v
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV50UPE
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6
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IPx65R190C6
IPA65R190C6,
IPB65R190C6
IPI65R190C6,
IPP65R190C6
IPW65R190C6
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SMD TRANSISTOR MARKING code TC
Abstract: SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE IPP65R190C6 IPB65R190C6 Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6
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IPx65R190C6
IPA65R190C6,
IPB65R190C6
IPI65R190C6,
IPP65R190C6
IPW65R190C6
SMD TRANSISTOR MARKING code TC
SMD mosfet MARKING code C6
65C6190
g1 TRANSISTOR SMD MARKING CODE
Diode type SMD marking SJ
transistor smd code marking KEY
Diode SMD SJ 19
ipa65r
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6r3k3c6
Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPD60R3K3C6
6r3k3c6
transistor SMD MARKING CODE 772
IPD60R3K3C6
TRANSISTOR SMD MARKING CODE 42
JESD22
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65E6190
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6
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IPx65R190E6
IPA65R190E6,
IPB65R190E6
IPI65R190E6,
IPP65R190E6
IPW65R190E6
65E6190
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6r2k0c6
Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPD60R2K0C6
6r2k0c6
IPD60R2K0C6
g1 TRANSISTOR SMD MARKING CODE
JESD22
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65E6190
Abstract: diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 IPP65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6
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IPx65R190E6
IPA65R190E6,
IPB65R190E6
IPI65R190E6,
IPP65R190E6
IPW65R190E6
65E6190
diode smd E6
smd diode E6
Diode SMD SJ 19
Diode type SMD marking SJ
IPW65R190E6
MOSFET TRANSISTOR SMD MARKING CODE 11
smd marking code E6
ipa65r
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