Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET TYPE CHANNEL N ID 180A Search Results

    MOSFET TYPE CHANNEL N ID 180A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TYPE CHANNEL N ID 180A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    e180ne10

    Abstract: E180N STE180NE10 STE180N JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 e180ne10 E180N STE180NE10 STE180N JESD97

    e180ne10

    Abstract: isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 e180ne10 isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97

    e180ne10

    Abstract: No abstract text available
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 STE180NE10 E180NE10

    STE180N10

    Abstract: Ultrasonic welding circuit diagram S18000
    Text: STE180N10 N - CHANNEL 100V - 0.0055 Ω - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.007 Ω 180 A TYPICAL RDS(on) = 0.0055 Ω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 STE180N10 Ultrasonic welding circuit diagram S18000

    Ultrasonic welding circuit diagram

    Abstract: schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET

    isotop mosfet 180A 100V

    Abstract: STE180NE10
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 isotop mosfet 180A 100V STE180NE10

    schematic diagram UPS

    Abstract: Ultrasonic welding circuit diagram Ultrasonic welding circuit isotop mosfet 180A 100V STE180N10
    Text: STE180N10  N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 schematic diagram UPS Ultrasonic welding circuit diagram Ultrasonic welding circuit isotop mosfet 180A 100V STE180N10

    STE180N10

    Abstract: No abstract text available
    Text: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 STE180N10

    isotop mosfet 180A 100V

    Abstract: STE180N10
    Text: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 isotop mosfet 180A 100V STE180N10

    isotop mosfet 180A 100V

    Abstract: schematic diagram UPS Ultrasonic welding circuit diagram schematic diagram welding device Ultrasonic welding circuit STE180NE10 schematic diagram electrical motor control
    Text: STE180NE10  N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 6 mΩ 180 A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 isotop mosfet 180A 100V schematic diagram UPS Ultrasonic welding circuit diagram schematic diagram welding device Ultrasonic welding circuit STE180NE10 schematic diagram electrical motor control

    Untitled

    Abstract: No abstract text available
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s


    Original     		PDF STE180NE10

    Sharp amplifier SM30

    Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power


    Original     		PDF -55oC 175oC. Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE

    n mosfet depletion pspice model parameters

    Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
    Text: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant


    Original     		PDF AN9210 ED-17 n mosfet depletion pspice model parameters NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets

    Spice 2 computer models for hexfets

    Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power


    Original     		PDF -55oC 175oC. Spice 2 computer models for hexfets pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs

    pspice high frequency mosfet

    Abstract: Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs ERL 35 transformer RFH75N05 RFH75N05 datasheet Sharp SM30 NMOS depletion pspice model n mosfet depletion pspice model parameters SM30
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract Title N92 bt A w pice bcirt r e wer OST atur- accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and


    Original     		PDF -55oC 175oC. pspice high frequency mosfet Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs ERL 35 transformer RFH75N05 RFH75N05 datasheet Sharp SM30 NMOS depletion pspice model n mosfet depletion pspice model parameters SM30

    Spice 2 computer models for hexfets

    Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Sharp amplifier SM30 NMOS depletion pspice model RFH75N05 Malouyans AN75 AN1043 Spice Model for TMOS Power MOSFETs SM30
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract /Title AN75 0 Subect A ew spice ubciruit or he ower OSET eaturng lobal emeraure ption ) Autho () Keyords Interil orpoation, emionuctor accepted by users, and the ease of parameter extraction


    Original     		PDF

    VOLT REGULATOR IC 79XX

    Abstract: 742T smd code 724g logic ic 7270 742r multi point fuel injection 772t its 4140n 428l2 XC2364
    Text: Automotive Power Selection Guide March 2008 Ultimate Power – Perfect Control Complete automotive solutions from Infineon www.infineon.com/automotivepower Introduction The ultimate power to control your applications including automotive, transportation, lighting


    Original     		PDF transp35 B112-H6731-G16-X-7600 VOLT REGULATOR IC 79XX 742T smd code 724g logic ic 7270 742r multi point fuel injection 772t its 4140n 428l2 XC2364

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		PDF KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original     		PDF /533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 Nov 28, 2012 –30 V, –85 A, 2.8 mΩ Description The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features • VDSS = −30 V TA = 25°C


    Original     		PDF PA2739T1A R07DS0885EJ0102 PA2739T1A PA2739T1A-E2-AYâ

    Untitled

    Abstract: No abstract text available
    Text: STE180N10 N - CHANNEL 100V - 5.5 m£1 - 180A - ISOTOP POWER MOSFET TYPE V STE180N10 • . . . . d s s 100 V R d S o ii < 7 m£2 Id 180 A TYPICAL RDS(on) = 5.5 m il 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    OCR Scan     		PDF STE180N10

    3C043

    Abstract: No abstract text available
    Text: S TE 180N 10 N - CHANNEL 100V - 0.055 Q - 180A - ISOTOP POWER MOSFET TYPE STE180N 10 V dss RDS on Id 100 V < 0 .0 0 7 Í2 180 A TYPICAL R d s (oii) = 0.055 Q 100% AVALANCHE TESTED . LOW INTRINSIC CAPACITANCE . GATE CHARGE MINIMIZED . REDUCED VOLTAGE SPREAD


    OCR Scan     		PDF STE180N 3C04390 3C043