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    MOSFET VGS 1.2V VDS 5V Search Results

    MOSFET VGS 1.2V VDS 5V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET VGS 1.2V VDS 5V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AOC2421 8V P-Channel MOSFET General Description Product Summary The AOC2421 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)


    Original     		PDF AOC2421 AOC2421

    Untitled

    Abstract: No abstract text available
    Text: AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)


    Original     		PDF AOC2413 AOC2413

    Untitled

    Abstract: No abstract text available
    Text: AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)


    Original     		PDF AOC2413 AOC2413

    Untitled

    Abstract: No abstract text available
    Text: AOC2421 8V P-Channel MOSFET General Description Product Summary The AOC2421 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)


    Original     		PDF AOC2421 AOC2421

    Untitled

    Abstract: No abstract text available
    Text: AOC2422 8V N-Channel MOSFET General Description Product Summary The AOC2422 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 3.5A ID (at VGS=2.5V)


    Original     		PDF AOC2422 AOC2422

    Untitled

    Abstract: No abstract text available
    Text: AOC2422 8V N-Channel MOSFET General Description Product Summary The AOC2422 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 3.5A ID (at VGS=2.5V)


    Original     		PDF AOC2422 AOC2422

    Untitled

    Abstract: No abstract text available
    Text: AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V)


    Original     		PDF AOC2414 AOC2414

    Untitled

    Abstract: No abstract text available
    Text: AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V)


    Original     		PDF AOC2414 AOC2414

    Untitled

    Abstract: No abstract text available
    Text: AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS -8V -3.5A ID (at VGS=-2.5V)


    Original     		PDF AOC2413 AOC2413

    Untitled

    Abstract: No abstract text available
    Text: AOC2421 8V P-Channel MOSFET General Description Product Summary The AOC2421 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS -8V -2.5A ID (at VGS=-2.5V)


    Original     		PDF AOC2421 AOC2421

    Untitled

    Abstract: No abstract text available
    Text: AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V)


    Original     		PDF AOC2414 AOC2414

    Untitled

    Abstract: No abstract text available
    Text: AOC2422 8V N-Channel MOSFET General Description Product Summary The AOC2422 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 3.5A ID (at VGS=2.5V)


    Original     		PDF AOC2422 AOC2422

    INJ0003AX

    Abstract: INK0003AX RT3U33M
    Text: RT3U33M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U33M is a composite transistor built with INK0003AX OUTLINE DRAWING Unit：mm and INJ0003AX chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current.


    Original     		PDF RT3U33M RT3U33M INK0003AX INJ0003AX SC-88 INK0003AX

    INJ0001AX

    Abstract: INK0001AX RT3U11M
    Text: RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U11M is a composite transistor built with INK0001AX OUTLINE DRAWING Unit：mm and INJ0001AX chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current.


    Original     		PDF RT3U11M RT3U11M INK0001AX INJ0001AX SC-88 INK0001AX

    Untitled

    Abstract: No abstract text available
    Text: AON2400 8V N-Channel MOSFET General Description Product Summary The AON2400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON2400 AON2400 Charac00

    INJ0001AX

    Abstract: INK0001AX RT3U11M
    Text: PRELIMINARY RT3U11M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET DESCRIPTION RT3U11M is a composite transistor built with OUTLINE DRAWING INK0001AX and INJ0001AX chips in SC-88 package. Unit：mm 2.1 ① ⑥ 0.65 ② ⑤


    Original     		PDF RT3U11M INK0001AX INJ0001AX SC-88 RT3U11M

    INJ0003AX

    Abstract: INK0003AX RT3U33M
    Text: PRELIMINARY RT3U33M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET DESCRIPTION RT3U33M is a composite transistor built with OUTLINE DRAWING INK0003AX and INJ0003AX chips in SC-88 package. Unit：mm 2.1 ① ⑥ 0.65 ② ⑤


    Original     		PDF RT3U33M INK0003AX INJ0003AX SC-88 RT3U33M

    INK0001AC

    Abstract: INK0001AC1 INK0001AU1 INK0001AM1 INK0001AT2 SC-75A
    Text: ＩＮＫ0001AＸ SERIES High speed switching Silicon N-channel MOSFET OUTLINE DRAWING INK0001AT2 INK0001AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INK0001AU1 INK0001AC1 1.7 1.0 Ｊ K 1 Ｃ 0.32 ③ 0.12 0～0.1 T-USM package Ｂ ② 0.55 Ｋ・１ 0.7 0.5


    Original     		PDF INK0001AT2 INK0001AM1 INK0001A INK0001AC INK0001AC1 INK0001AU1 INK0001AM1 INK0001AT2 SC-75A

    INK0002AC1

    Abstract: INK0002AM1 INK0002AT2 INK0002AU1 SC-75A
    Text: ＩＮＫ0002AＸ SERIES High speed switching Silicon N-channel MOSFET OUTLINE DRAWING INK0002AT2 INK0002AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INK0002AU1 INK0002AC1 1.7 1.0 Ｊ K ２ Ｃ 0.32 ③ 0.12 0～0.1 T-USM package Ｂ ② 0.55 Ｋ・２ 0.7 0.5


    Original     		PDF INK0002AT2 INK0002AM1 INK0002A INK0002AC1 INK0002AM1 INK0002AT2 INK0002AU1 SC-75A

    INK0003AU1

    Abstract: SC-75A INK0003AT2 INK0003A INK0003AC1 INK0003AM1
    Text: ＩＮＫ0003AＸ SERIES High speed switching Silicon N-channel MOSFET OUTLINE DRAWING INK0003AT2 INK0003AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INK0003AU1 INK0003AC1 1.7 1.0 Ｊ K ３ Ｃ 0.32 ③ 0.12 0～0.1 T-USM package Ｂ ② 0.55 Ｋ・３ 0.7 0.5


    Original     		PDF INK0003AT2 INK0003AM1 INK0003A INK0003AU1 SC-75A INK0003AT2 INK0003AC1 INK0003AM1

    INJ0001AC1

    Abstract: INJ0001AM1 INJ0001AT2 INJ0001AU1 SC-75A
    Text: ＩＮJ0001AＸ SERIES High speed switching Silicon P-channel MOSFET OUTLINE DRAWING INJ0001AT2 INJ0001AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INJ0001AU1 INJ0001AC1 1.7 1.0 T-USM package Ｊ Ｊ １ Ｂ Ｃ 0.32 ③ 0.12 0～0.1 0.7 Ｊ・１ ② 0.55 0.5


    Original     		PDF J0001A INJ0001AT2 INJ0001AM1 INJ0001A INJ0001AC1 INJ0001AM1 INJ0001AT2 INJ0001AU1 SC-75A

    INK0002AX

    Abstract: RT3K22M channel mosfet
    Text: RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K22M is a composite transistor built with two INK0002AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


    Original     		PDF RT3K22M RT3K22M INK0002AX SC-88 INK0002AX channel mosfet

    INJ0002AX

    Abstract: INK0002AX RT3U22M
    Text: RT3U22M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U22M is a composite transistor built with INK0002AX OUTLINE DRAWING Unit：mm and INJ0002AX chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current.


    Original     		PDF RT3U22M RT3U22M INK0002AX INJ0002AX SC-88 INK0002AX

    INJ0003AC1

    Abstract: INJ0003AM1 INJ0003AT2 INJ0003AU1 SC-75A
    Text: ＩＮJ0003AＸ SERIES High speed switching Silicon P-channel MOSFET OUTLINE DRAWING INJ0003AT2 INJ0003AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INJ0003AU1 INJ0003AC1 1.7 1.0 T-USM package Ｊ Ｊ ３ Ｂ Ｃ 0.32 ③ 0.12 0～0.1 0.7 Ｊ・３ ② 0.55 0.5


    Original     		PDF J0003A INJ0003AT2 INJ0003AM1 INJ0003A INJ0003AC1 INJ0003AM1 INJ0003AT2 INJ0003AU1 SC-75A