MOST* K3407 Search Results

**MOST* K3407 Result Highlights (5)**

Part	ECAD Model	Manufacturer	Description	Download	Buy
MSP430FR2633IYQWR		Texas Instruments	MSP430 MCU with CapTIvate technology - the lowest power, most noise-immune capacitive touch 24-DSBGA -40 to 85
MSP430FR2633IYQWT		Texas Instruments	MSP430 MCU with CapTIvate technology - the lowest power, most noise-immune capacitive touch 24-DSBGA -40 to 85
MSP430FR2633IDA		Texas Instruments	MSP430 MCU with CapTIvate technology - the lowest power, most noise-immune capacitive touch 32-TSSOP -40 to 85
MSP430FR2633IDAR		Texas Instruments	MSP430 MCU with CapTIvate technology - the lowest power, most noise-immune capacitive touch 32-TSSOP -40 to 85
MSP430FR2633IRHBT		Texas Instruments	MSP430 MCU with CapTIvate technology - the lowest power, most noise-immune capacitive touch 32-VQFN -40 to 85

**MOST* K3407 Datasheets Context Search**

Catalog Datasheet	MFG & Type	PDF	Document Tags
K3407 Abstract: No abstract text available Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	PDF	2SK3407 K3407
K3407 Abstract: TRANSISTOR K3407 Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	PDF	2SK3407 K3407 TRANSISTOR K3407
k3407 Abstract: 2SK3407 most* k3407 2SK3407 equivalent K340 Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) · High forward transfer admittance: \|Yfs\| = 7.5 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	PDF	2SK3407 k3407 2SK3407 most* k3407 2SK3407 equivalent K340
K3407 Abstract: 2SK3407 most* k3407 Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)	Original	PDF	2SK3407 K3407 2SK3407 most* k3407
bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original	PDF
MK3881 Abstract: mk3882 MK3887 z80b mostek microcomputer Z80 Mostek 3870 MK3870/40 Text: MICROCOMPUTER SYSTEMS DATA BOOK <» MOSTEK Copyright 1 9 8 0 M ostek Corporation A ll rights reserved Trade Marks Registered Mostek reserves the right to make changes in specifications at any time and without notice. The information furnished by Mostek in this publication is believed to be accurate and reliable. However, no responsibility is	OCR Scan	PDF
MK3882 Abstract: MK3870/20 siemens semiconductor manual mostek microcomputer Mostek 3870 AIM shugart mostek Am9511 MK3884 MOSTEK MEMORY MK36000 Text: MICROCOMPUTER SYSTEMS DATA BOOK MOSTEK Copyright 1980 Mostek Corporation All rights reserved Trade Marks Registered Mostek reserves the right to make changes in specifications at any time and without notice. The information furnished by Mostek in this publication is believed to be accurate and reliable. However, no responsibility is	OCR Scan	PDF