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    MOTOROLA CM 340 A TRANSISTOR Search Results

    MOTOROLA CM 340 A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA CM 340 A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF328

    Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
    Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and


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    PDF AN790/D AN790 MRF328 MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454

    2N6136

    Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
    Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum


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    PDF AN548A/D AN548A 2N6136 uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A

    MG46A

    Abstract: No abstract text available
    Text: Order this document by MC13028A/D MC13028A Advanced Wide Voltage IF and C-QUAM AM Stereo Decoder C–QUAM AM STEREO ADVANCED WIDE VOLTAGE IF and DECODER for E.T.R. RADIOS The MC13028A is a third generation C–QUAM stereo decoder targeted for use in low voltage, low cost AM/FM E.T.R. radio applications. Advanced


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    PDF MC13028A/D MC13028A MC13028A MC13028A/D* MG46A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27706-2E ASSP For Power Supply Applications Secondary battery DC/DC Converter IC for Charging MB3878 • DESCRIPTION The MB3878 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and


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    PDF DS04-27706-2E MB3878 MB3878

    38M25

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27706-2E ASSP For Power Supply Applications Secondary battery DC/DC Converter IC for Charging MB3878 • DESCRIPTION The MB3878 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and


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    PDF DS04-27706-2E MB3878 MB3878 38M25

    Kikusui

    Abstract: 2N7002 FPT-24P-M03 MB3878 MB3878PFV MB47358 MBRS130LT3 Si4435 Si4435DY
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27706-1E ASSP For Power Supply Applications Secondary battery DC/DC Converter IC for Charging MB3878 • DESCRIPTION The MB3878 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and


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    PDF DS04-27706-1E MB3878 MB3878 Kikusui 2N7002 FPT-24P-M03 MB3878PFV MB47358 MBRS130LT3 Si4435 Si4435DY

    RX2 1015

    Abstract: MC14544 MC145406 MC145412 IN4001 IN5818 MC34119 MC1454 TXO710 Nippon capacitors
    Text: MOTOROLA Order this document by MC145406/D SEMICONDUCTOR TECHNICAL DATA MC145406 Driver/Receiver EIA 232–E and CCITT V.28 Formerly RS–232–D P SUFFIX PLASTIC CASE 648 The MC145406 is a silicon–gate CMOS IC that combines three drivers and three receivers to fulfill the electrical specifications of standards


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    PDF MC145406/D MC145406 MC145406 MC145406/D* RX2 1015 MC14544 MC145412 IN4001 IN5818 MC34119 MC1454 TXO710 Nippon capacitors

    johanson trim

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m


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    PDF RF160/D johanson trim

    SU 179 transistor

    Abstract: SU 179
    Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single


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    PDF RF275L/D SU 179 transistor SU 179

    F 2452 mosfet

    Abstract: DV2820 0823L R K J 0822
    Text: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •


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    PDF RF166C/D MRF166C MRF136, DV2820, BLF244, SD1902, ST1001 F 2452 mosfet DV2820 0823L R K J 0822

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


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    PDF MRF177/D

    L9181

    Abstract: l6262 Nippon capacitors L 0946
    Text: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc


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    PDF RF275G/D L9181 l6262 Nippon capacitors L 0946

    IN5343

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics


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    PDF MRF166W/D IN5343

    motorola transistor cross reference

    Abstract: No abstract text available
    Text: MOTOROLA Order Number: MC10EP56/D Rev. 0, 04/1999 Semiconductor Components S 0 -2 0 , DW SUFFIX PLASTIC W IDE SO IC PACKAGE CASE 751 D-05 ORDERING INFORMATION M C10EP56DW ’/• SOIC ß j l& PIN DESCRIPTION Product Preview Dual Differential 2:1 M ultiplexer


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    PDF MC10EP56/D C10EP56DW 35Ops 20-Lead MC10EP56/D motorola transistor cross reference

    MGP20N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


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    PDF MGP20N60U/D MGP20N60 O-220 21A-09 O-22QAB MGP20N

    SU 179 transistor

    Abstract: Motorola ic 1036 Nippon capacitors
    Text: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF RF141G/D SU 179 transistor Motorola ic 1036 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient


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    PDF MJE18002D2/D MJE18002D2 MJE18002D2

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order th is docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw ork


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    PDF BUL44D2/D BUL44D2 BUL44D2

    s9093

    Abstract: AD131 TC 2-25
    Text: M O T O T O 'm fl Order this document i ;f/|ic0 II ILC 'OR TECHNICAL DATA bv bul45d2/d BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter


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    PDF bul45d2/d BUL45D2 BUL45D2 2PHX34554C s9093 AD131 TC 2-25

    Untitled

    Abstract: No abstract text available
    Text: MC34025 MC33025 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information .HIP High Speed Double-Ended PWM Controller The MC34025 series are high speed, fixed frequency, double-ended pulse width modulator controllers optimized for high frequency operation. They are


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    PDF MC34025 MC33025 MC34025 MC34025,

    T 3512 H diode

    Abstract: BU323P BU323AP diode led rojo diode T 3512 H a72S4 Lc 3362 M 3329 B1
    Text: MOTORCLA SC XSTRS/R F ÎE E D I L3fc.?aS4 MOTOROLA T he BU323P, BU323APare m onolithic darlington transistors designed for autom otive ignition, switching regulator and m otor control applications. DARLINGTON NPN SILICON POWER TRANSISTORS 350 & 400 VOLTS 125 WATTS


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    PDF BU323P BU323AP BU323P, BU323APare BU323AP) BU323AP 359VlBU323P; VI6U323AP) T 3512 H diode diode led rojo diode T 3512 H a72S4 Lc 3362 M 3329 B1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk


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    PDF BUL44D2/D BUL44D2 21A-06 O-220AB

    68HC24

    Abstract: 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB
    Text: by AN1102/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1102 Interfacing Power MOSFETs to Logic Devices Prepared by Ken Berringer Motorola Discrete Applications POWER MOSFET DRIVE CHARACTERISTICS Power M OSFETs are commonly used in switching applica­ tions due to their fast switching speeds and low static losses.


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    PDF AN1102/D AN1102 25178T AN1102/D 68HC24 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB

    C34060AP

    Abstract: MC34060AL C34060A
    Text: <8 > M O TO R O LA. — — — M C34060A M C33060A Precision SWITCHMODE Pulse W idth M odulator Control C ircuit The MC34060A is a low cost fixed frequency, pulse width modulation control circuit designed prim arily for single-ended SW ITCHMODE power supply control.


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    PDF C34060A C33060A MC34060A MC33060A C34060AP MC34060AL