MRF328
Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and
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AN790/D
AN790
MRF328
MRF243
mrf245
MRF648
MRF463
Motorola transistors MRF648
MRF460
Barnes RM2A
Motorola transistors MRF455
Motorola transistors MRF454
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2N6136
Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum
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AN548A/D
AN548A
2N6136
uhf amplifier design
equivalent transistor bc 172 b
ARCO 465 Compression Trimmer Capacitor
2N5946
AN-282A
Transistor 2274
AN548A
AN555
AN282A
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MG46A
Abstract: No abstract text available
Text: Order this document by MC13028A/D MC13028A Advanced Wide Voltage IF and C-QUAM AM Stereo Decoder C–QUAM AM STEREO ADVANCED WIDE VOLTAGE IF and DECODER for E.T.R. RADIOS The MC13028A is a third generation C–QUAM stereo decoder targeted for use in low voltage, low cost AM/FM E.T.R. radio applications. Advanced
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MC13028A/D
MC13028A
MC13028A
MC13028A/D*
MG46A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27706-2E ASSP For Power Supply Applications Secondary battery DC/DC Converter IC for Charging MB3878 • DESCRIPTION The MB3878 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and
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DS04-27706-2E
MB3878
MB3878
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38M25
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27706-2E ASSP For Power Supply Applications Secondary battery DC/DC Converter IC for Charging MB3878 • DESCRIPTION The MB3878 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and
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DS04-27706-2E
MB3878
MB3878
38M25
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Kikusui
Abstract: 2N7002 FPT-24P-M03 MB3878 MB3878PFV MB47358 MBRS130LT3 Si4435 Si4435DY
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27706-1E ASSP For Power Supply Applications Secondary battery DC/DC Converter IC for Charging MB3878 • DESCRIPTION The MB3878 is a DC/DC converter IC suitable for down-conversion, using pulse-width (PWM) charging and
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DS04-27706-1E
MB3878
MB3878
Kikusui
2N7002
FPT-24P-M03
MB3878PFV
MB47358
MBRS130LT3
Si4435
Si4435DY
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RX2 1015
Abstract: MC14544 MC145406 MC145412 IN4001 IN5818 MC34119 MC1454 TXO710 Nippon capacitors
Text: MOTOROLA Order this document by MC145406/D SEMICONDUCTOR TECHNICAL DATA MC145406 Driver/Receiver EIA 232–E and CCITT V.28 Formerly RS–232–D P SUFFIX PLASTIC CASE 648 The MC145406 is a silicon–gate CMOS IC that combines three drivers and three receivers to fulfill the electrical specifications of standards
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MC145406/D
MC145406
MC145406
MC145406/D*
RX2 1015
MC14544
MC145412
IN4001
IN5818
MC34119
MC1454
TXO710
Nippon capacitors
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johanson trim
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m
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RF160/D
johanson trim
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SU 179 transistor
Abstract: SU 179
Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single
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RF275L/D
SU 179 transistor
SU 179
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F 2452 mosfet
Abstract: DV2820 0823L R K J 0822
Text: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •
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RF166C/D
MRF166C
MRF136,
DV2820,
BLF244,
SD1902,
ST1001
F 2452 mosfet
DV2820
0823L
R K J 0822
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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MRF177/D
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L9181
Abstract: l6262 Nippon capacitors L 0946
Text: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc
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RF275G/D
L9181
l6262
Nippon capacitors
L 0946
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IN5343
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics
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MRF166W/D
IN5343
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motorola transistor cross reference
Abstract: No abstract text available
Text: MOTOROLA Order Number: MC10EP56/D Rev. 0, 04/1999 Semiconductor Components S 0 -2 0 , DW SUFFIX PLASTIC W IDE SO IC PACKAGE CASE 751 D-05 ORDERING INFORMATION M C10EP56DW ’/• SOIC ß j l& PIN DESCRIPTION Product Preview Dual Differential 2:1 M ultiplexer
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MC10EP56/D
C10EP56DW
35Ops
20-Lead
MC10EP56/D
motorola transistor cross reference
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MGP20N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP20N60U/D
MGP20N60
O-220
21A-09
O-22QAB
MGP20N
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SU 179 transistor
Abstract: Motorola ic 1036 Nippon capacitors
Text: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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RF141G/D
SU 179 transistor
Motorola ic 1036
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient
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MJE18002D2/D
MJE18002D2
MJE18002D2
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order th is docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw ork
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BUL44D2/D
BUL44D2
BUL44D2
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s9093
Abstract: AD131 TC 2-25
Text: M O T O T O 'm fl Order this document i ;f/|ic0 II ILC 'OR TECHNICAL DATA bv bul45d2/d BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter
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bul45d2/d
BUL45D2
BUL45D2
2PHX34554C
s9093
AD131
TC 2-25
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Untitled
Abstract: No abstract text available
Text: MC34025 MC33025 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information .HIP High Speed Double-Ended PWM Controller The MC34025 series are high speed, fixed frequency, double-ended pulse width modulator controllers optimized for high frequency operation. They are
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MC34025
MC33025
MC34025
MC34025,
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T 3512 H diode
Abstract: BU323P BU323AP diode led rojo diode T 3512 H a72S4 Lc 3362 M 3329 B1
Text: MOTORCLA SC XSTRS/R F ÎE E D I L3fc.?aS4 MOTOROLA T he BU323P, BU323APare m onolithic darlington transistors designed for autom otive ignition, switching regulator and m otor control applications. DARLINGTON NPN SILICON POWER TRANSISTORS 350 & 400 VOLTS 125 WATTS
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BU323P
BU323AP
BU323P,
BU323APare
BU323AP)
BU323AP
359VlBU323P;
VI6U323AP)
T 3512 H diode
diode led rojo
diode T 3512 H
a72S4
Lc 3362
M 3329 B1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk
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BUL44D2/D
BUL44D2
21A-06
O-220AB
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68HC24
Abstract: 14049UB mc14000 series 74LS240-74HC240 74LS04 Hex Inverter Gate function table 74LS04 NOT gate MC14049 IC AN1102 motorola AN1102-D CMOS IC 4069UB
Text: by AN1102/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1102 Interfacing Power MOSFETs to Logic Devices Prepared by Ken Berringer Motorola Discrete Applications POWER MOSFET DRIVE CHARACTERISTICS Power M OSFETs are commonly used in switching applica tions due to their fast switching speeds and low static losses.
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AN1102/D
AN1102
25178T
AN1102/D
68HC24
14049UB
mc14000 series
74LS240-74HC240
74LS04 Hex Inverter Gate function table
74LS04 NOT gate
MC14049 IC
AN1102 motorola
AN1102-D
CMOS IC 4069UB
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C34060AP
Abstract: MC34060AL C34060A
Text: <8 > M O TO R O LA. — — — M C34060A M C33060A Precision SWITCHMODE Pulse W idth M odulator Control C ircuit The MC34060A is a low cost fixed frequency, pulse width modulation control circuit designed prim arily for single-ended SW ITCHMODE power supply control.
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C34060A
C33060A
MC34060A
MC33060A
C34060AP
MC34060AL
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