J239
Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET
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MRF9002R2/D
MRF9002R2
J239
motorola J122
A113
MRF9002R2
RO4350
mosfet j133
motorola rf Power Transistor
j122 mosfet
J104 MOSFET
J239 mosfet transistor
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motorola rf Power Transistor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
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MRF9002R2/D
MRF9002R2
MRF9002R2
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motorola rf Power Transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET
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MRF9045MR1
RDMRF9045MR1
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93F2975
Abstract: transistor WB1
Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9060M/D
MRF9060MBR1
DEVICEMRF9060M/D
93F2975
transistor WB1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9060M/D
MRF9060MBR1
DEVICEMRF9060M/D
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us 945 mosfet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9030M/D
MRF9030MR1
us 945 mosfet
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies
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MRF9060M/D
MRF9060MBR1
DEVICEMRF9060M/D
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J133 mosfet transistor
Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL
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MRF9002R2/D
MRF9002R2
J133 mosfet transistor
transistor j239
motorola MOSFET 935
ON SEMICONDUCTOR J122
985 transistor
A113
MRF9002R2
RO4350
mosfet j133
MOTOROLA TRANSISTOR 935
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J133 mosfet transistor
Abstract: transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor mosfet j133 J133 MOSFET J133 transistor J239 TRANSISTOR
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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MRF9002R2
MRF9002R2
J133 mosfet transistor
transistor j239
J143 MOSFET
J239 mosfet transistor
J104 MOSFET
J122 transistor
mosfet j133
J133 MOSFET
J133 transistor
J239 TRANSISTOR
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J133 mosfet transistor
Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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MRF9002R2
MRF9002R2
J133 mosfet transistor
mosfet j133
J104 MOSFET
j122 mosfet
mosfet j122
9601 mosfet
J122 transistor
transistor z5
TRANSISTOR J15
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945 mosfet n
Abstract: 93F2975 c17 dual mos 9450 transistor 52169
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it
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MRF9060MBR1
945 mosfet n
93F2975
c17 dual mos
9450 transistor
52169
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MRF186 equivalent
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
MRF186
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2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 9601 mosfet
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
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MRF186
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
MRF186
9601 mosfet
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J133 mosfet transistor
Abstract: transistor 955 MOTOROLA
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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J133 mosfet transistor
transistor 955 MOTOROLA
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MRF186
Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
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MRF186
31JUL04
MRF186
C10B4
motorola MOSFET 935
Z11-Z16
RF power amplifier MHz
MRF186 equivalent
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motorola MOSFET 935
Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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motorola MOSFET 935
J133 mosfet transistor
transistor 955 MOTOROLA
sps transistor
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MRF9030MBR1
Abstract: MRF9030MR1 TO-270-2
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor, Inc.
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MRF9030M/D
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MRF9030MBR1
MRF9030MR1
MRF9030MBR1
TO-270-2
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A113
Abstract: MRF9045MBR1 MRF9045MR1
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.
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MRF9045MR1
A113
MRF9045MBR1
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MRF186
Abstract: No abstract text available
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186
MRF186
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device • Broadband performance from HF to 1 GHz. • Bottom side source eliminates DC isolators, reducing common
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IS22I
MRF183
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183/D
MRF183
MRF183S
MRF183SR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183
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MRF183SR1
31JUL04
31JAN05
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IRL 724
Abstract: IRL 724 N motorola MOSFET 935 MRF183 MRF183S MRF183SR1
Text: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183
MRF183S
MRF183SR1
MRF183)
MRF183S
MRF183
MRF183/D
31JUL04
IRL 724
IRL 724 N
motorola MOSFET 935
MRF183SR1
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52405
Abstract: 65 MHZ circuit transmitter
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045
MRF9045S
MRF9045SR1
52405
65 MHZ circuit transmitter
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