2P102
Abstract: 100125FC MMDFS2P102 MMDFS2P102R2 DFS2P dfs2p10 SIDED10 MARKING 1ED
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MM DFS2P10tiD DATA DesignerSTMData Sheet FETWTM MOSFET and Schott~ Rectifier The FETWM product family incorporates low RDS on , true logic level MOSFETS packaged with industy leading, low fomard drop, low leakage Schottky Barrier rectifiers
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DFS2P10tiD
OUCHTONE602
81-M521
852-Z
2P102
100125FC
MMDFS2P102
MMDFS2P102R2
DFS2P
dfs2p10
SIDED10
MARKING 1ED
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MT 6236
Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which
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MMSF1ONO22D
2W609
MT 6236
Transistor WIG
10NO2Z
woy transistor
AN569
zener diod
MARKING S04
diod zener
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AN569
Abstract: MMDF6N03HD MMDF6N03HDR2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order thisdocument by MMDF6N03HD/D DATA E Advance /formation Medium Power Surface Mount Products TMOS Dual N-ChanneI FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s
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MMDF6N03HD/D
Box54W,
30H7G21W
Ok7741846
AN569
MMDF6N03HD
MMDF6N03HDR2
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MI1600
Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl
Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s
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MMDF4P03HDID
MMDF4P03HD
MMDF4P03HDm
MI1600
100L
AN569
MMDF4P03HD
MMDF4P03HDR2
ldm # jl
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D3200
Abstract: MMDF3200 MMDF3200Z diode sy 166 TBD 135 Transistor
Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order thie document by MMDF3200ZD DATA Product Preview WaveFETTM I Motorola Preferred Devica Medium Power Surface Mount Products I TMOS DuaI N-Channel Field Effect Transistors WaveFEPM devices are an advanced series of power MOSFETS which utilize Motorola’s
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MMDF3200ZD
WI-2447
602-2H609
MMDF3200
D3200
MMDF3200Z
diode sy 166
TBD 135 Transistor
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MPF102 JFET
Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory
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AN211A/D
AN211A
MPF102 JFET
motorola AN211A
2N3797
MPF102 Transistor
2N4221 MOTOROLA POWER TRANSISTOR
2N4221 motorola
JFET with Yos
MPF102 circuit application
2N4351 MOTOROLA
igfet
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AN211A
Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
AN211A
MPF102 JFET
MPF102 equivalent transistor
MPF102 Transistor
MPF102 JFET data sheet
2N3797
2N3797 equivalent
mpf102 fet
mpf102 equivalent P channel
2N4221 motorola
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2N3797
Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
2N3797
MPF102 equivalent transistor
MPF102 JFET
mpf102 fet
2N3797 equivalent
2N4221 motorola
MPF102 Transistor
mpf102 application note
P-Channel Depletion Mode FET
JFET TRANSISTOR REPLACEMENT GUIDE
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UC3843 spice model
Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
Text: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,
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BR101/D
ECL300,
UC3843 spice model
project on water level control using ic 7400
mosfet cross reference
mhw612
mc146805g
MC88110
MC68020 Minimum System Configuration
smart UPS APC CIRCUIT diagram
ASSIST09
mhw613
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VN5000TNE
Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
Text: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15
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S01124Bo
VNOS10l
2N7000
VN2222l
So1117Bo
So1117N
S01137Bo
VN2222lM
VN130SN3
VN5000TNE
IRF0123
VMP4
motorola 20n
IRF0113
mosfet vn66af
VN0106N2
mosfet 2sk* to-92
mosfet 20n
735M
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40673 MOSFET
Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E
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BF964
BF966
3SK107E
3SK107F
3SK107G
BF996S
40673 MOSFET
MFE131 mosfet
3SK77GR
3N159
40673
MPF201
MFE521
3SK77BL
3N200 MOSFET
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MFE990
Abstract: MFE960 MFE930
Text: MOTOROLA SC XSTRS/R F IME 0 § fc.3t.7S54 000^740 Ö | MOTOROLA • SEMICONDUCTOR MFE930 MFE960 MFE990 TECHNICAL DATA 2.0 A M P E R E N -C H A N N EL E N H A N C EM EN T -M O D E T M O S FIELD-EFFECT T R A N SIST O R N -C H A N N E L T M O S FET These T M O S FETs are d esigned for high-speed sw itching appli
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MFE930
MFE960
MFE990
FE930
FE960
FE990
MFE930,
3b725Ji
MFE990
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MFE9200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFE9200 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD EFFECT TRANSISTOR 200 VOLTS This T M O S FET is d e s ig n e d fo r h ig h -v o lta g e , h ig h -sp eed s w itc h ing a p p licatio n s such as line drivers, relay d rivers, C M O S logic,
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MFE9200
MFE9200
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MPF910
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ing applications su c h as line drivers, relay drivers, C M O S logic,
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MFE910
MPF910
MPF910
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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DK101/D.
0020-frJ
1RFZ40
1RF150
MTP25N10E
mth7n50 Transistor
MTP35N06E
BUZ80a equivalent
buz90 equivalent
MTP40N06M
MFE9200
MTH7N50
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MFE3003
Abstract: aade MFEC3003
Text: ~3M MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC DE^b3b725S DIODES/OPTO ODBfiQ4ti 4 | ~ 34-C 3 8 0 4 6 r - FIELD-EFFECT TRANSISTORS DICE (continued) MFEC3003 DIE NO. LINE SOURCE — DFM115 This die provides performance equal to or better than that of
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OCR Scan
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b3b725S
DFM115
MFEC3003
MFE3003
MFE3003
aade
MFEC3003
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MFE121
Abstract: MFE120 MFE122 T7210
Text: MOTORCLA SC XSTRS/R F 15E D | b3fc.7a5M Q0afci7g0 1 [ MFE120 T~Z! , thru MFE122 CASE 20-03, STYLE 9 TO-72 TO-206AF M A X IM U M RATINGS Symbol Value VDS + 25 Vdc Drain Current >D 30 mAdc Total Device Dissipation @ T /\ - 25°C Derate above 25°C PD 300 1.7
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MFE120
MFE122
O-206AF)
b3b7254
MFE120
MFE121
MFE122
T7210
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PDF
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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DK101/D.
O-22QI
0020-H
MFE9200
BUZ84A
BUZ90 equivalent
IRF150 MOSFET AMP circuit
BUZ35S
MTP40N06M
IRFZ22 mosfet
1RF620
MTM12N10L
MTP25N10E
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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OCR Scan
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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PDF
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R D E ~ | h B b 7 a S 4 OOflEbb? □ "j- F 96D 82667 - T - D 2 / - iJ r MFE140 CASE 20-03, STYLE 9 TO-72 TO-206AF) M A X I M U M R A T IN G S Sym bol V alue U n it Drain -Source V oltage
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OCR Scan
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MFE140
O-206AF)
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arco 402
Abstract: JMC2951 SK1381 001H MFE140 SK138 185 6-140
Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOT OROLA SC CXSTRS/R D E ~ | h B b 7 a S 4 OOflEbh? □ "J- F 96D 82667 D - r - 3 /- ajr MFE140 CASE 20-03, STYLE 9 TO-72 TQ-206AF) M A X IM U M R A T IN G S Symbol Value Unit Drain-Source Voltage Rating
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OCR Scan
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MFE140
O-206AF)
10/iAdc,
3b75s4
gdflet71
arco 402
JMC2951
SK1381
001H
MFE140
SK138
185 6-140
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PDF
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MFE3002
Abstract: No abstract text available
Text: M O T O R O L A SC -CDIODES/OPTO} 34 6 3 6 7 2 5 5 M O T O R O L A SC DE I b3ti7ESS 0 0 3 0 0 4 5 <DIODES/OPTO 34C S 1 38045 D T-jr-î-r RELD-EFFECT TRANSISTORS DICE continued) MFEC3002 die n o . LINE SOURCE — DFM114 This die provides performance equal to or better than that of
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OCR Scan
|
DFM114
MFEC3002
MFE3002
MFE3002
|
PDF
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10VDC
Abstract: MAX584 2n4352
Text: M O T O R OL A SC XSTRS/R F 12E D | b3b?2S4 G0flt?M3 T | MFE823 CASE 22-03, STYLE 11 TO-18 TO-206AA M A X IM U M RATINGS Symbol Rating Value U nit • 25 Vdc Drain-Source Voltage Vos Drain-Gate Voltage Vd G ±10 Vdc Id 30 mAdc PD 300 1.71 T j. Tstg - 6 5 to +175
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OCR Scan
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MFE823
O-206AA)
2N4352
10VDC
MAX584
|
PDF
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PF960
Abstract: D004 power ic pf990
Text: MOTOROLA SEM ICONDUCTOR MPF930 MPF960 MPF990 TECHNICAL DATA N -C H A N N E L E N H A N C E M E N T -MO DE TM O S F IE L D -E F F E C T T R A N S IS T O R 2 .0 A M P E R E N-CHANNEL TMOS FETs T h e s e T M O S FE Ts a re d e s ig n e d f o r h ig h - s p e e d s w it c h in g a p p li
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OCR Scan
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MPF930
MPF960
MPF990
MPF930,
PF960
D004 power ic
pf990
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PDF
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