MOTOROLA RF DEVICE Search Results

MOTOROLA RF DEVICE Result Highlights (5)

Part	Manufacturer	Description
TPD2017FN	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30
TPD2015FN	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=5 A / SSOP30
TPD4204F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30

MOTOROLA RF DEVICE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CA2820 TRW Abstract: ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022 Text: Order this document by AN1022/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1022 MECHANICAL AND THERMAL CONSIDERATIONS IN USING RF LINEAR HYBRID AMPLIFIERS Prepared by: Don Feeney Motorola RF Devices ABSTRACT Motorola’s thin film hybrid amplifiers are medium power	Original	AN1022/D AN1022 CA2820 TRW ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022	PDF
HP RF TRANSISTOR GUIDE Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS	Original	SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor	PDF
Motorola transistors MRF646 Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860 Text: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today	Original	SG46/D Motorola transistors MRF646 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860	PDF
MRF156R Abstract: MRF156 Arco 469 ceramic capacitor Text: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.	Original	MRF156/D MRF156 MRF156R MRF156 MRF156/D* MRF156R Arco 469 ceramic capacitor	PDF
MOTOROLA RF MODULE Abstract: motorola amplifier Text: Chapter Two Motorola RF General Purpose Linear Amplifier Module Data Sheets Device Number Page Number MHW1345 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA 2.1- 3 2.1-1	Original	MHW1345 MOTOROLA RF MODULE motorola amplifier	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF862/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF862 Motorola Preferred Device Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the	Original	MRF862/D MRF862 MRF862/D*	PDF
LL1608-FHN2K Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K	PDF
MRFG35010M Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	RDMRFG35010MT1BWA MRFG35010MT1 MRFG35010M	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	RDMRFG35003MT1BWA MRFG35003MT1	PDF
940 629 MOTOROLA Abstract: HDR2X10 DB4140 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and	Original	MHVIC910HR2 940 629 MOTOROLA HDR2X10 DB4140	PDF
08055C103KAT Abstract: No abstract text available Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High	Original	MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 08055C103KAT	PDF
motorola sps transistor Abstract: MRF21010 Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRF21010 RDMRF21010NCDMA motorola sps transistor MRF21010	PDF
MRFG35005MT1 Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210 Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35005MT1 MRFG35005MT1 RDMRFG35005MT1BWA CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210	PDF
db14g Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35010MT1 MRFG35010MT1 RDMRFG35010MT1BWA db14g CDR33BX104AKWS T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M	PDF

1206 cms diode Abstract: 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 RF35 1206 cms Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High	Original	MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 1206 cms diode 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB RF35 1206 cms	PDF
mosfet ghz Abstract: mrf182 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF182 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect TVansistors 30 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device	OCR Scan	MRF182 MRF182 mosfet ghz	PDF
vk200 rf choke Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.	OCR Scan	MRF156 MRF156R 340G-02, O-264AA) VK200 MRF156120 MRF156R 83-j3 vk200 rf choke VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 Arco 469 ceramic capacitor	PDF
SU 179 transistor Abstract: s227 Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen	OCR Scan	MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227	PDF
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ	PDF
MRF860 Abstract: 2n2222 npn transistor 2N2222 rf Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	MRF860/D 2PHX33728Q-0 MRF860 2n2222 npn transistor 2N2222 rf	PDF
transistor BD 135 Abstract: capacitor J336 J336 transistor k 2843 TPV8200B EQUIVALENT OF K 2843 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza	OCR Scan	TPV8200B TPV8200B 156-C transistor BD 135 capacitor J336 J336 transistor k 2843 EQUIVALENT OF K 2843	PDF
mallory 170 Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170	PDF
mhw916 Abstract: No abstract text available Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA b y M HW 916/D M HW 916 The RF Line UHF Silicon FET Power Amplifier Motorola Preferred Device 16 WATT 925-960 MHz RF POWER AMPLIFIER Designed specifically for the European Digital Extended Group Special	OCR Scan	916/D MHW916 MHW916	PDF
F5003 Abstract: 1N4734 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	OCR Scan	F5003 MRF5003 MRFS003 AN215A, F5003 1N4734	PDF

MOTOROLA RF DEVICE Search Results

MOTOROLA RF DEVICE Result Highlights (5)

MOTOROLA RF DEVICE Datasheets Context Search

CA2820 TRW

HP RF TRANSISTOR GUIDE

Motorola transistors MRF646

MRF156R

MOTOROLA RF MODULE

Untitled

LL1608-FHN2K

MRFG35010M

Untitled

940 629 MOTOROLA

08055C103KAT

motorola sps transistor

MRFG35005MT1

db14g

1206 cms diode

mosfet ghz

vk200 rf choke

SU 179 transistor

rohm mtbf

MRF860

transistor BD 135

mallory 170

mhw916

F5003