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Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF284 MRF284S US CDMA The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors Freescale Semiconductor, Inc.
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CA2820 TRW
Abstract: ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022
Text: Order this document by AN1022/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1022 MECHANICAL AND THERMAL CONSIDERATIONS IN USING RF LINEAR HYBRID AMPLIFIERS Prepared by: Don Feeney Motorola RF Devices ABSTRACT Motorola’s thin film hybrid amplifiers are medium power
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AN1022
CA2820 TRW
ferroxcube 4C4
MOTOROLA hybrid amplifiers
UBJ-20 connector bnc
CA2820
MOTOROLA hybrid amplifiers* reliability
714g
714G-01
trw RF POWER TRANSISTOR
AN1022
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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03B3
Abstract: 1206 cms diode 100B100JCA500X MW4IC915GMBR1 MW4IC915MBR1 TAJE226M035R bourns 3224w
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
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03B3
1206 cms diode
100B100JCA500X
MW4IC915GMBR1
TAJE226M035R
bourns 3224w
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hatching machine
Abstract: MWIC930 MWIC930GR1 MWIC930R1 RM73B2AT102J
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and
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hatching machine
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GM 950 motorola
Abstract: A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2 198MHz
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor, Inc. The MHVIC915R2 wideband integrated circuit is designed for CDMA and
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A113
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GRM40
GRM42
MHVIC915
198MHz
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MRF873
Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and
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AN1526
AN1526/D*
MRF873
j30 124 transistor
150 watt amplifier advantages and disadvantages
MRF650
transistor j334
AN1526
motorola rf book
transistor j326
power semiconductor 1973
Nippon capacitors
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MRF1507
Abstract: EB209 MRF5007 N4000
Text: MOTOROLA EB209 Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott Motorola Semiconductor Products Sector
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MRF5007
N4000
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08055C103KAT
Abstract: No abstract text available
Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High
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TO272
Abstract: 03B3 1206 cms diode 100B100JCA500X A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 TAJE226M035R
Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High
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1206 cms diode
100B100JCA500X
A113
MW4IC915GMBR1
MW4IC915MB
TAJE226M035R
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1206 cms diode
Abstract: 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 RF35 1206 cms
Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High
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08055C103KAT
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MW4IC915MB
RF35
1206 cms
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AN4005
Abstract: MRF1507 EB209
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN4005/D AN4005 Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Prepared by: Jeanne Pavio and Mike McCloskey Motorola SPS Communications Technology Center
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C12R1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
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TO272
Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
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2XE3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs W–CDMA 2.11–2.17 GHz
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GM 950 motorola
Abstract: ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915 MHVIC915R2
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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grm40
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GRM42
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J361 IC
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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J595
Abstract: J673 J361
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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A113
Abstract: ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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HDR2X10
Abstract: 2052-1618 HDR2X10STIMCSAFU MHVIC910HR2 2052161802 J596
Text: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and
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EB-27 motorola
Abstract: hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers
Text: Order this document by AN749/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN749 BROADBAND TRANSFORMERS AND POWER COMBINING TECHNIQUES FOR RF Prepared by: H. Granberg RF Circuits Engineering INTRODUCTION The following discussion focuses on broadband transformers for RF power applications with practical examples
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hf power combiner broadband transformers
Indiana general ferrite core
stackpole 57-1845-24b
FERRITE TOROID Indiana General F684-1
57-1845-24b
Design of H. F. Wideband Power Transformers
BROADBAND TRANSFORMERS AND POWER
ecom-2989
power combiner broadband transformers
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