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    MOTOROLA TRANSISTORS MRF652 Search Results

    MOTOROLA TRANSISTORS MRF652 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA TRANSISTORS MRF652 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9130

    Abstract: MRF9030L MRF9060 MRF9135LSR3
    Text: Chapter Five Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5–3 MRF9080LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF MBC13900 MRF281SR1 MRF281ZR1 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5P21180 MRF21180 MRF21180S MRFG35003M6T1 MRF9130 MRF9030L MRF9060 MRF9135LSR3

    Untitled

    Abstract: No abstract text available
    Text: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181


    Original     		PDF MBC13900 MRF281SR1 MRF281ZR1 MRF282SR1 MRF282ZR1 MRF284 MRF284SR1 MRF21090S MRF21120 MRF21120S

    MRF181SR1

    Abstract: No abstract text available
    Text: Section Two Motorola RF Discrete Transistors – Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–258


    Original     		PDF MRF134 MRF136 MRF141 MRF141G MRF148A MRF150 MRF151 MRF21090 MRF21090S MRF21120 MRF181SR1

    Motorola transistors MRF652

    Abstract: MRF652 MRF652S case 244-04 726 MOTOROLA TRANSISTORS
    Text: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF652 MRF652S Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


    Original     		PDF MRF652/D MRF652 MRF652S MRF652 MRF652/D* Motorola transistors MRF652 MRF652S case 244-04 726 MOTOROLA TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    SPS 16-H

    Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3 SPS 16-H BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer

    "RF MOSFET"

    Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3 "RF MOSFET" BC847 LP2951 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common


    Original     		PDF MRF6522-70 MRF6522-70R3 MRF6522

    MRF6522-70

    Abstract: mosfet 55 nf 06
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common


    Original     		PDF MRF6522-70 MRF6522-70R3 MRF6522 mosfet 55 nf 06

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large–signal, common source


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    MRF9742

    Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF MHW1184L MHW1224L MHW1254L MHW1304L MRF9742 MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF652 MRF652S Designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF MRF652 MRF652S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF652 MRF652S Designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF MRF652 MRF652S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF652 M RF652S Designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


    OCR Scan     		PDF MRF652/D MRF652 RF652S

    RE7Z

    Abstract: MRF652
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF652 MRF652S NPN Silicon RF Power Transistors . . designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and com ­ mercial FM equipm ent operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF MRF652 MRF652S MRF652 MRF652, RE7Z

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    motorola transistor cross reference

    Abstract: MRF660 MRF648 Motorola transistors MRF630 transistor 7905
    Text: MOTOROLA SC XSTRS/R F 4fe,E D WM b 3 b ? 2 S 4 00=13843 =1 • M O T b RF Power Bipolar Transistors — UHF Transistors (continued) T -3 3 ^ 7 5 0 0 -1 0 0 0 MHz BAND Capable of operation in either class AB or C, the following devices are designed for operation to 1 GHz. Gold metallized die, diffused


    OCR Scan     		PDF MRA0510-15H MRA0510-50H MRA0510-50H MRF653S MRF641W MRF654 MRF644W MRF646 MRF650W motorola transistor cross reference MRF660 MRF648 Motorola transistors MRF630 transistor 7905

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF652 MRF652S D e sig n e d fo r 12.5 V d c U H F la rg e -s ig n a l, a m p lifie r a p p lic a tio n s in in d u s tria l a nd c o m m e rc ia l FM e q u ip m e n t o p e ra tin g to 5 1 2 M H z.


    OCR Scan     		PDF MRF652 MRF652S

    BC847

    Abstract: LP2951 MRF6522-70 MRF6522-70R3
    Text: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d


    OCR Scan     		PDF RF6522â MRF6522-70 MRF6522-70R3 MRF6522â BC847 LP2951 MRF6522-70R3

    900 mhz oscillator using bfr91 transistor

    Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 mrf559 mrf581 mrf837 mrf8372 mrf838/a 305a-01 mrf557 317d-01 900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237