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    MOUNTING AND SOLDERING OF RF TRANSISTORS Search Results

    MOUNTING AND SOLDERING OF RF TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP627M Toshiba Electronic Devices & Storage Corporation Photocoupler (photodarlington transistor output), DC input, 5000 Vrms, DIP4 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MOUNTING AND SOLDERING OF RF TRANSISTORS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Mounting and Soldering of RF transistors NXP Semiconductors AN10896 - Mounting and Soldering of RF transistors Original PDF

    MOUNTING AND SOLDERING OF RF TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN10896

    Abstract: No abstract text available
    Text: AN10896 Mounting and Soldering of RF transistors Rev. 2 — 13 Nov 2012 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages


    Original     		AN10896 AN10896 PDF

    AN10896

    Abstract: finger print sensor pcb with circuit Mounting and Soldering of RF transistors heller 1700 ipc 610D JEDEC J-STD-020d Moisture/Reflow sensitivity HVQFN48 J-STD-020D bga rework graphite thermal spreader
    Text: AN10896 Mounting and Soldering of RF transistors Rev. 01 — 17 May 2010 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages


    Original     		AN10896 AN10896 finger print sensor pcb with circuit Mounting and Soldering of RF transistors heller 1700 ipc 610D JEDEC J-STD-020d Moisture/Reflow sensitivity HVQFN48 J-STD-020D bga rework graphite thermal spreader PDF

    Untitled

    Abstract: No abstract text available
    Text: AN11183 Mounting and soldering of RF transistors in over-molded plastic packages Rev. 1 — 6 November 2012 Application note Document information Info Content Keywords Over-Molded Plastic OMP packages, heat sink, footprint, surface mount, reflow soldering, component handling, exposed heat spreader, SMDP,


    Original     		AN11183 PDF

    SMD transistors

    Abstract: msa42 smd-transistor DATA BOOK MSA444 RF Power Modules msa4 smd-transistor code book MSA422 "RF Power Modules" transistor smd code 404
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones General • Acceptance tests on finished products to verify


    Original     		MBB439 SMD transistors msa42 smd-transistor DATA BOOK MSA444 RF Power Modules msa4 smd-transistor code book MSA422 "RF Power Modules" transistor smd code 404 PDF

    TRANSISTOR SMD MARKING CODE NM

    Abstract: thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF General • Acceptance tests on finished products to verify conformance with the device specification. The test


    Original     		SC08b MLB049 TRANSISTOR SMD MARKING CODE NM thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor PDF

    AN3263

    Abstract: metric bolts tightening torque graphite foil m2 m2.5 m3 bolt tensile bts 2140 1b data sheet "RF Power Transistors"pallet metric bolts torque metric bolts torque m 32 omp amplifier A104
    Text: Freescale Semiconductor Application Note AN3263 Rev. 0, 6/2006 Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages By: Mahesh Shah, Richard Wetz, Lindsey Tiller, Leonard Pelletier, Eddie Mares and Jin - wook Jang


    Original     		AN3263 AN3263 metric bolts tightening torque graphite foil m2 m2.5 m3 bolt tensile bts 2140 1b data sheet "RF Power Transistors"pallet metric bolts torque metric bolts torque m 32 omp amplifier A104 PDF

    transistor working principle

    Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron
    Text: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.


    Original     		AN3025 transistor working principle weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron PDF

    TRANSISTOR SMD CODE PACKAGE SOT353

    Abstract: msa42 transistor working principle 250 B 340 smd Transistor Basic Transistor and Cross Reference Specification Mounting and Soldering of RF transistors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General section RF Wideband Transistors Product specification File under Discrete Semiconductors, SC14 1997 Nov 26 Philips Semiconductors Product specification RF Wideband Transistors General section • Acceptance tests on finished products to verify


    Original     		MLB049 TRANSISTOR SMD CODE PACKAGE SOT353 msa42 transistor working principle 250 B 340 smd Transistor Basic Transistor and Cross Reference Specification Mounting and Soldering of RF transistors PDF

    h0 sod123

    Abstract: Transistor SMD SOT363 SC70 SOT353 hf Device h0 sod123 GaAs tunnel diode gFE smd diode SOD80 footprint sot23 footprint SOT346 ZENER thyristor handbook
    Text: Philips Semiconductors RF Wideband Transistors General section • Acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective actions. The inspection and test requirements are


    Original     		MLB049 h0 sod123 Transistor SMD SOT363 SC70 SOT353 hf Device h0 sod123 GaAs tunnel diode gFE smd diode SOD80 footprint sot23 footprint SOT346 ZENER thyristor handbook PDF

    STAC244

    Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
    Text: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider


    Original     		AN3232 STAC244B STAC265B STAC244F STAC265F STAC244 drying oven M252 substitution AN3232 C10100 M252 seho PDF

    AN3025

    Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
    Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace


    Original     		AN3025 AN3025 transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free PDF

    gsm signal repeater

    Abstract: No abstract text available
    Text: Product Description Sirenza Microdevices’ XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in GSM and EDGE RF applications. This module is optimized to minimize the EVM at typical operating levels. The power transistors are fabricated using Sirenza's latest, high


    Original     		XD010-14S-D4F XD010-14S-D4FY XD010-EVAL) EDS-102936 AN-060 gsm signal repeater PDF

    GSM repeater circuit

    Abstract: Rogers 4350 datasheet AN060 XD010-14S-D4F XD010-14S-D4FY
    Text: Product Description Sirenza Microdevices’ XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in GSM and EDGE RF applications. This module is optimized to minimize the EVM at typical operating levels. The power transistors are fabricated using Sirenza's latest, high


    Original     		XD010-14S-D4F XD010-14S-D4F XD010-14S-D4FY XD010-EVAL) EDS-102936 AN-060 GSM repeater circuit Rogers 4350 datasheet AN060 XD010-14S-D4FY PDF

    GSM repeater circuit

    Abstract: GSM module circuit diagram Rogers 4350 datasheet AN060 XD010-14S-D4F repeater gsm
    Text: XD010-14S-D4F Product Description Sirenza Microdevices’ XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in GSM and EDGE RF applications. This module is optimized to minimize the EVM at typical operating levels. The power transistors are fabricated using Sirenza's latest, high


    Original     		XD010-14S-D4F XD010-14S-D4F XD010-EVAL) EDS-102936 AN-060 GSM repeater circuit GSM module circuit diagram Rogers 4350 datasheet AN060 repeater gsm PDF

    Untitled

    Abstract: No abstract text available
    Text: XD010-04S-D4F Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is


    Original     		XD010-04S-D4F XD010-04S-D4F XD010-EVAL) EDS-104259 AN-060 PDF

    XD010-51S-D4FY

    Abstract: LDMOS 15w Rogers 4350 datasheet AN060 XD010-51S-D4F
    Text: Product Description Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a


    Original     		XD010-51S-D4F XD010-51S-D4F XD010-51S-D4FY XD010-EVAL) EDS-105061 AN-060 XD010-51S-D4FY LDMOS 15w Rogers 4350 datasheet AN060 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a


    Original     		XD010-51S-D4F XD010-51S-D4FY XD010-EVAL) EDS-105061 AN-060 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is


    Original     		XD010-04S-D4F XD010-04S-D4FY XD010-EVAL) EDS-104259 AN-060 PDF

    VD-1-43

    Abstract: Rogers 4350 datasheet AN060 XD010-04S-D4F 10MF 35V
    Text: Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is


    Original     		XD010-04S-D4F XD010-04S-D4F XD010-04S-D4FY XD010-EVAL) EDS-104259 AN-060 VD-1-43 Rogers 4350 datasheet AN060 10MF 35V PDF

    GSM repeater circuit

    Abstract: EDS-102930 repeater gsm Rogers 4350 datasheet AN060 XD010-22S-D2F GSM repeater power amplifier module
    Text: XD010-22S-D2F 1805-1880 MHz Class A/AB 12W Power Amplifier Module Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors


    Original     		XD010-22S-D2F XD010-22S-D2F XD010-EVAL) EDS-102930 AN-060 GSM repeater circuit repeater gsm Rogers 4350 datasheet AN060 GSM repeater power amplifier module PDF

    XD010-22S-D2FY

    Abstract: GSM repeater circuit Rogers 4350 datasheet XD010-22S-D2F AN060
    Text: XD010-22S-D2F XD010-22S-D2FY Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors


    Original     		XD010-22S-D2F XD010-22S-D2FY XD010-22S-D2F XD010-EVAL) EDS-102930 AN-060 XD010-22S-D2FY GSM repeater circuit Rogers 4350 datasheet AN060 PDF

    XD010-24S-D2FY

    Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
    Text: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


    Original     		XD010-24S-D2F XD010-24S-D2FY XD010-24S-D2F XD010-EVAL) EDS-102932 AN-060 XD010-24S-D2FY Rogers 4350 datasheet AN060 PDF

    Untitled

    Abstract: No abstract text available
    Text: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


    Original     		XD010-24S-D2F XD010-24S-D2FY XD010-EVAL) EDS-102932 AN-060 PDF

    bc 339

    Abstract: No abstract text available
    Text: Philips Semiconductors RF Wideband Transistors General section MOUNTING AND SOLDERING Screen printing Mounting methods This Is the best high-voiume production method of solder paste application. An emulsion-coated, fine mesh screen with apertures etched in the emulsion to coincide with the


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